STMicroelectronics-BUT30V

BUT30V  

®

NPN TRANSISTOR POWER MODULE  

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NPN TRANSISTOR  

HIGH CURRENT POWER BIPOLAR MODULE  

VERY LOW R

th

JUNCTION CASE  

SPECIFIED ACCIDENTAL OVERLOAD  

AREAS  

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FULLY INSULATED PACKAGE (U.L.  

COMPLIANT) FOR EASY MOUNTING  

LOW INTERNAL PARASITIC INDUCTANCE  

APPLICATIONS:  

Pin 4 not connected  

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MOTOR CONTROL  

SMPS & UPS  

WELDING EQUIPMENT  

ISOTOP  

INTERNAL SCHEMATIC DIAGRAM  

ABSOLUTE MAXIMUM RATINGS  

Symbol  

Parameter  

Collector-Emitter Voltage (V

BE

= -5 V)  

Value  

200  

125  

7

Unit  

V

CEV  

V

V

V

A

A

A

A

W

V

CEO(sus)

Collector-Emitter Voltage (I

B

= 0)  

V

EBO  

I

C  

I

CM  

I

B  

Emitter-Base Voltage (I

C

= 0)  

Collector Current  

100  

150  

20  

Collector Peak Current (t

p

= 10 ms)  

Base Current  

I

BM  

P

tot  

V

isol  

Base Peak Current (t

p

= 10 ms)  

30  

o

Total Dissipation at T

c

= 25

 

C  

250  

2500  

Insulation Withstand Voltage (RMS) from All  

Four Terminals to External Heatsink  

Storage Temperature  

T

stg  

T

j  

-55 to 150  

150  

Max. Operating Junction Temperature  

1/7  

February 2003  

BUT30V  

THERMAL DATA  

R

thj-case

Thermal Resistance Junction-case  

Max  

Max  

0.5  

R

thc-h  

Thermal Resistance Case-heatsink

 

With Conductive  

Grease Applied  

0.05  

ELECTRICAL CHARACTERISTICS

(T

case

= 25

o

C unless otherwise specified)  

Symbol  

Parameter  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

I

CER  

Collector Cut-off  

Current (R

BE

= 5

Ω

)  

V

CE

= V

CEV  

V

CE

= V

CEV  

1

5

mA  

mA  

T

c

= 100

o

C  

T

c

= 100

o

C  

I

CEV  

I

EBO  

Collector Cut-off  

Current (V

BE

= -5V)  

V

CE

= V

CEV  

V

CE

= V

CEV  

1

4

mA  

mA  

Emitter Cut-off Current

 

V

EB

= 5 V  

(I

C

= 0)  

1

mA  

V

CEO(sus)

* Collector-Emitter  

Sustaining Voltage  

(I

B

= 0)  

I

C

= 0.2 A  

L = 25 mH  

125  

V

V

h

FE  

DC Current Gain  

I

C

= 100 A

 

V

CE

= 5  

27  

V

CE(sat)  

Collector-Emitter  

Saturation Voltage  

I

C

= 50 A  

I

C

= 50 A  

I

B

= 2.5 A  

I

B

= 2.5 A

 

T

c

= 100

 

C  

0.45  

0.55  

0.7  

0.9  

1.2  

0.9  

1.5  

V

V

V

V

o

I

C

= 100 A

 

I

B

= 10 A  

I

C

= 100 A

 

I

B

= 10 A

 

T

c

= 100

 

C  

o

0.9  

V

BE(sat)  

Base-Emitter  

Saturation Voltage  

I

C

= 50 A  

I

C

= 50 A  

I

B

= 2.5 A  

I

B

= 2.5 A

 

T

c

= 100

 

C  

1.15  

1.1  

1.45  

1.55  

1.4  

1.4  

1.8  

1.9  

V

V

V

V

o

I

C

= 100 A

 

I

B

= 10 A  

I

C

= 100 A

 

I

B

= 10 A

 

T

c

= 100

 

C  

o

di

C

/dt  

Rate of Rise of  

On-state Collector  

270  

350  

2.7  

2

A/

µ

s  

V

CC

= 300 V

 

R

C

= 0

 

t

p

= 3

µ

s  

I

B1

= 15 A

 

T

c

= 100

 

C  

V

CC

= 300

 

V R

C

= 1

Ω  

o

V

V

3.5  

2.5  

V

o

Dynamic Voltage  

I

B1

= 15 A  

T

c

= 100

 

C  

V

V

CC

= 300

 

V R

C

= 1

Ω  

o

Dynamic Voltage  

I

B1

= 15 A  

T

c

= 100

 

C  

t

s  

t

f  

t

c  

Storage Time  

Fall Time  

Cross-over Time  

I

C

= 100 A  

V

BB

= -5 V  

V

clamp

= 125 V

 

I

B1

= 10 A  

V

CC

= 90 V  

R

BB

= 0.47

Ω  

1

0.1  

0.2  

2

0.2  

0.35  

µ

s  

µ

s  

µ

s  

o

L = 45

µ

H  

T

c

= 100

 

C  

V

CEW  

Maximum Collector  

Emitter Voltage  

I

CWoff

= 150 A

 

I

B1

= 10 A  

125  

V

V

BB

= -5 V  

V

CC

= 90 V  

Without Snubber  

L = 30

µ

H  

T

c

= 125

 

C  

R

BB

= 0.5

Ω  

o

Pulsed: Pulse duration = 300

µ

s, duty cycle 1.5 %  

2/7  

BUT30V  

Safe Operating Areas  

Thermal Impedance  

Derating Curve  

Collector-emitter Voltage Versus  

Base Emitter Resistance  

Collector Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

3/7  

BUT30V  

Reverse Biased SOA  

Foward Biased SOA  

Reverse Biased AOA  

Forward Biased AOA  

Switching Times Inductive Load  

Switching Times Inductive Load Versus  

Temperature  

4/7  

BUT30V  

Dc Current Gain  

Turn-on Switching Test Circuit  

(1) Fast electronic switch  

(2) Non-inductive load  

Turn-on Switching Waveforms  

Turn-off Switching Test Circuit  

Turn-off Switching Waveforms  

(1) Fast electronic switch  

(3) Fast recovery rectifier  

(2) Non-inductive load  

5/7  

BUT30V  

ISOTOP MECHANICAL DATA  

mm  

inch  

TYP.  

DIM.  

MIN.  

11.8  

8.9  

TYP.  

MAX.  

12.2  

9.1  

MIN.  

0.465  

0.350  

0.307  

0.029  

0.076  

1.488  

1.240  

0.990  

0.938  

MAX.  

0.480  

0.358  

0.322  

0.033  

0.080  

1.503  

1.248  

1.003  

0.950  

A

A1  

B

7.8  

8.2  

C

0.75  

1.95  

37.8  

31.5  

25.15  

23.85  

0.85  

2.05  

38.2  

31.7  

25.5  

24.15  

C2  

D

D1  

E

E1  

E2  

G

24.8  

0.976  

14.9  

12.6  

3.5  

4.1  

4.6  

4

15.1  

12.8  

4.3  

4.3  

5

0.586  

0.496  

0.137  

0.161  

0.181  

0.157  

0.157  

1.185  

0.594  

0.503  

1.169  

0.169  

0.196  

0.169  

0.173  

1.193  

G1  

G2  

F

F1  

P

4.3  

4.4  

30.3  

P1  

S

4

30.1  

P093A  

6/7  

BUT30V  

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  

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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  

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7/7