STMicroelectronics-D44H11
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D44H8 – D44H11
D45H8 – D45H11
Complementary power transistors
.
Features
■
Low collector-emitter saturation voltage
■
Fast switching speed
T
A
B
Applications
■
Power amplifier
■
Switching circuits
3
2
1
TO-220
Description
The devices are manufactured in low voltage multi
epitaxial planar technolog
y
.
T
hey are intended for
general purpose linear and switching applications.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
Marking
Polarity
Package
Packaging
D44H8
D44H11
D45H8
D44H8
D44H11
D45H8
NPN
NPN
PNP
PNP
TO-220
TO-220
TO-220
TO-220
T
u
be
T
u
be
T
u
be
T
u
be
D45H11
D45H11
October 2009
Doc ID 4213 Rev 5
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8
Absolute maximum ratings
D44H8, D44H11, D45H8, D45H11
1
Absolute maximum ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
Collector-emitter voltage (I
B
= 0) D44H8 – D45H8
Collector-emitter voltage (I
B
= 0) D44H11 – D45H11
Emitter-base voltage (I
C
= 0)
60
V
V
V
CEO
80
V
EBO
I
C
5
10
V
Collector current
A
I
CM
Collector peak current
20
A
P
TOT
T
STG
T
J
T
o
tal dissipation at T
case
= 25 °C
Storage temperature
50
W
°C
°C
-55 to 150
150
Max. operating junction temperature
Note:
For PNP types voltage and current values are negative.
Table 3.
Symbol
Thermal data
Parameter
Value
2.5
Unit
°C/W
°C/W
R
thJC
R
thJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
62.5
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Doc ID 4213 Rev 5
D44H8, D44H11, D45H8, D45H11
Electrical characteristics
2
Electrical characteristics
T
= 25 °C; unless otherwise specified.
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
I
C
= 100 mA
Min. Typ. Max. Unit
Collector-emitter
(1)
V
CEO(sus)
D44H8 – D45H8
60
80
–
–
V
sustaining voltage (I
B
= 0)
D44H11 – D45H11
Collector cut-off current
(V
BE
= 0)
I
CES
V
CE
= rated V
CEO
V
EB
= 5 V
10
µA
Emitter cut-off current
(I
C
= 0)
I
EBO
–
–
–
100
1
µA
V
Collector-emitte
r
s
aturation
voltage
(1)
V
CE(sat)
I
C
= 8 A
I
C
= 8 A
I
B
= 0.4 A
Base-emitter saturation
voltage
(1)
V
BE(sat)
I
B
= 0.8 A
1.5
V
I
C
= 2 A
_
V
CE
= 1 V
V
CE
= 1 V
60
40
–
–
(1)
h
FE
DC current gain
I
C
= 4 A
_ _
1. Pulse
test: pulse duration
≤
300 µs, duty cycle
≤
2 %.
Note:
For PNP types voltage and current values are negative.
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Electrical characteristics
D44H8, D44H11, D45H8, D45H11
Figure 3.
Derating curve
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
DC current gain (NPN)
Figure 5.
DC current gain (PNP)
Collector-emitter saturation
Figure 7.
voltage (NPN)
Collector-emitter saturation
voltage (PNP)
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Doc ID 4213 Rev 5
D44H8, D44H11, D45H8, D45H11
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
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Package mechanical data
D44H8, D44H11, D45H8, D45H11
TO-220 type A mechanical data
mm
Typ
Dim
Min
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
b
1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
2
8
.
9
0
3
.75
3
.
8
5
2.
9
5
2.65
0015988_Rev_S
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Doc ID 4213 Rev 5
D44H8, D44H11, D45H8, D45H11
Revision history
4
Revision history
Table 5.
Date
Document revision history
Revision
Changes
21-Jun-2004
20-Oct-2009
4
5
Document migration, no content change.
Updated mechanical data.
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D44H8, D44H11, D45H8, D45H11
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