STMicroelectronics-FERD40U45CT
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FERD40U45C
Field effect rectifier
Datasheet
–
production data
Description
A1
A2
This dual rectifier is based on a proprietary
technology that achieves the best in class V
/I
for a given silicon surface.
K
F R
K
2
Packaged in TO-220AB, and D PAK, this device
is intended to be used in switch mode power
supplies, or automotive applications
K
A2
Table 1. Device summary
A2
K
A1
A1
I
F(AV)
V
RRM
2 x 20 A
45 V
2
D PAK
FERD40U45CG
TO-220AB
FERD40U45CT
V
F
(typ)
0.31 V
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Low forward voltage drop
High frequency operation
November 2013
DocID024891 Rev 1
1/10
This is information on a product in full production.
Characteristics
FERD40U45C
1
Characteristics
Table 2. Absolute ratings (limiting values, per diode at 25° C, unless otherwise stated)
Symbol
V
RRM
I
F(RMS)
Forward rms current
Parameter
Value
Unit
Repetitive peak reverse voltage
45
40
V
A
T
c
=150° C
T
c
=145° C
Per diode
20
40
I
F(AV)
Average forward current,
= 0.5
A
Per device
I
FSM
T
stg
Surge non repetitive forward current
Storage temperature range
t
p
= 10 ms sinusoidal
275
-65 to + 175
175
A
°C
TO-220AB, D
2
PAK
Maximum operating junction
temperature
(1)
T
j
°C
D
2
PAK (DC forward current without
reverse bias, t = 1 hour)
200
dPtot
—————
1
————————-
1.
Rth
j
–
a
condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Per diode
T
o
tal
1.6
1.1
R
th (j-c)
R
th(c)
Junction to case
Coupling
°C/W
°C/W
0.5
When the diodes 1 and 2 are used simultaneously:
T (diode 1) = P(diode1) x R
(Per diode) + P(diode2) x R
.
th(c)
j
th(j-c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
T
j
= 25° C
1800
100
µA
(1)
I
R
Reverse leakage current
V
R
= V
RRM
I
F
= 10 A
I
F
= 20 A
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
50
mA
0.35
0.31
0.42
0.42
0.385
0.34
0.46
0.46
(2)
V
F
Forward voltage drop
V
1. Pulse
test: t
p
= 5 ms,
< 2%
2. Pulse
test: t
p
= 380 µs,
< 2%
To
e
valuate the conduction losses use the following equation:
2
P = 0.28 x I
+ 0.009 I
F(AV)
F (RMS)
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FERD40U45C
Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Average forward current versus
ambient temperature (
= 0.5, per diode)
P
(W)
I
(A)
F(AV)
F(AV)
16
14
12
10
8
25
20
15
10
5
d
= 0.1
d
= 0.2
d
= 0.5
R
th(j-a)
=R
th(j-c)
d
= 0.05
d
= 1
6
T
4
T
2
I
(A)
F(AV)
T (°C)
amb
=tp/T
d
=tp/T
d
tp
tp
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
Figure 3. Relative variation of thermal
Figure 4. Reverse leakage current versus
impedance junction to case versus pulse
duration
reverse voltage applied (typical values, per
diode)
I
(mA)
Z
/R
th(j-c) th(j-c)
R
1.E+02
1.E+01
1.E+00
1.E-01
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T=125°C
j
T=25°C
j
Single pulse
t
(s)
V
(V)
R
p
0
5
10
15
20
25
30
35
40
45
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5. Junction capacitance versus reverse
Figure 6. Forward voltage drop versus forward
voltage applied (typical values, per diode)
current (typical values, per diode)
(A)
I
C (pF)
F
10000
100.0
10.0
1.0
F=1MHz
osc
=30mV
RMS
V
T=25°C
j
1000
T=125°C
j
T=25°C
j
V
(V)
V
(V)
F
R
100
0.1
1
10
100
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
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10
Characteristics
FERD40U45C
Figure 7. Thermal resistance junction to ambient versus copper surface under tab
(typical values)
R
(°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
D²PAK
Epoxy printed circuit board FR4,
copper thickness: 35 µm
S
(cm²)
(Cu)
0
5
10
15
20
25
30
35
40
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DocID024891 Rev 1
FERD40U45C
Package Information
2
Package Information
Epoxy meets UL94,V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m (TO-220AB)
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages,
depending on their level of environmental compliance. ECOPACK
®
ECOPACK is
an ST trademark.
Figure 8. TO-220AB dimension definitions
A
E
∅
P
F
Resin gate
0.5 mm max.
(1)
protrusion
Q
H1
D
D1
L30
L20
J1
b1
L1
L
b
e
Resin gate
c
0.5 mm max.
(1)
protrusion
e1
(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites
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10
Package Information
FERD40U45C
Table 5. TO-220AB dimension values
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.17
0.024
0.045
0.019
0.60
0.18
0.035
0.067
0.027
0.62
b1
c
D
D1
E
1.27 typ.
0.05 typ.
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.39
0.094
0.19
0.41
0.106
0.20
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
0.048
0.24
0.052
0.26
H1
J1
L
0.094
0.51
0.107
0.55
L1
L20
L30
P
Q
3.50
3.93
0.137
0.154
16.40 typ.
28.90 typ.
0.64 typ.
1.13 typ.
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
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FERD40U45C
Package Information
2
Figure 9. D PAK dimension definitions
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
2
Table 6. D
PAK dimension values
Dimensions
Ref.
Millimeters
Inches
Max.
Min.
Max.
Min.
A
A1
A2
B
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.30
2.29
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
2.79
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.051
0.090
0.181
0.106
0.009
0.037
B2
C
0.067
0.024
C2
D
0.054
0.368
E
0.409
G
0.208
L
0.624
L2
L3
M
0.055
0.069
0.110
R
0.40 typ.
0.016 typ.
8°
V2
0°
8°
0°
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10
Package Information
FERD40U45C
2
Figure 10. D
PAK footprint (dimensions in mm)
16.90
12.2
5.08
2.54
1.60
3.50
9.75
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DocID024891 Rev 1
FERD40U45C
Ordering Information
3
Ordering Information
Table 7. Ordering information
Order code
Marking
Package
Weight Base
qty Delivery
mode
FERD40U45CT
FERD40U45CT
FERD40U45CG
TO-220AB
D
2
PAK
2.2 g
1.8 g
50
Tube
FERD40U45CG-TR
500
T
a
pe and reel
4
Revision history
Table 8. Document revision history
Revision Description
of Changes
Date
13-Nov-2013
1
Previous version
DocID024891 Rev 1
9/10
10
FERD40U45C
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