STMicroelectronics-MD2103DFP
| Part # | STMicroelectronics-MD2103DFP |
| Download | STMicroelectronics-MD2103DFP |
MD2103DFP
High voltage NPN power transistor for standard
definition CRT display
Features
■
State-of-the-art technology:
– Diffused
collector “enhanced generation”
■
Stable performance versus operating
temperature variation
■
Low base drive requirement
3
2
■
Tight h
range at operating collector current
FE
1
■
Fully insulated power package UL compliant
■
Integrated free wheeling diode
TO-220FP
Applications
■
Horizontal deflection output for TV
F
gure 1.
Internal schematic diagram
Description
The MD2103DFP is manufactured using diffused
collector in planar technology adopting
new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
briging updated performance to the horizontal
deflection stage.
R
BE
=65
Ω
(typ)
Table 1.
Order code
MD2103DFP
Device summary
Marking
Package
TO-220FP
Packing
MD2103DFP
T
u
be
May 2008
Rev 1
1/9
9
Electrical ratings
MD2103DFP
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
1500
700
7
Unit
V
V
CES
V
CEO
V
EBO
I
C
Collector-emitter voltage (V
BE
=0)
Collector-emitter voltage (I
B
=0)
Emitter-base voltage (I
C
=0)
Collector current
V
V
6
A
I
CM
Collector peak current (t
P
< 5ms)
Base current
9
A
I
B
3
A
P
tot
T
o
tal dissipation at T
c
≤
25°C
38
W
Insulation withstand voltage (RMS) from all three leads to
external heatsink
V
INS
1500
V
T
stg
T
J
Storage temperature
-65 to 150
150
°C
°C
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
3.3
°C/W
2/9
MD2103DFP
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
V
CE
= 1500V
Collector cut-off current
(V
BE
=0)
0.2
2
mA
mA
I
CES
V
CE
= 1500V
T
C
= 125°C
Emitter cut-off current
(I
C
=0)
I
EBO
V
EB
= 5V
50
125
mA
V
Emitter-base brakdown
voltage (I
C
= 0)
I
E
= 700mA
11
V
(BR)EBO
(1)
Collector-emitter
saturation voltage
V
CE(sat)
I
C
= 3A
_ _
I
B
=0.75A
I
C
= 3A
_ _
I
B
=0.75A
1.8
1.5
V
Base-emitter saturation
voltage
(1)
V
V
BE(sat)
I
C
= 1A
I
C
= 3A
I
= 3
V
CE
=5V
V
CE
=1V
V
CE
=5V
17
6
(1)
DC current gain
h
FE
6.5
9.5
I
C
=3A
f
h
=16kHz
Inductive load
Storage time
Fall time
I
B(on)
=0.5A V
BE(off)
=-2.7V
L
BB(off)
=6.3
µ
H
t
s
t
f
3.8
µ
s
µ
s
0.25
V
F
I
F
= 3A
Dio
forward voltage
2
V
Note:
Note (1
Pulsed duration = 300
µ
s, duty cycle
≤
1.5%
3/9
Electrical characteristics
MD2103DFP
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Output characteristics
DC current gain
Figure 3.
Figure 5.
Figure 7.
Derating curve
Reverse biased SOA
DC current gain
4/9
MD2103DFP
Electrical characteristics
Figure 8.
Collector-emitter saturation
Figure 9.
voltage
Base-emitter saturation
voltage
Figure 10.
Power losses
Figure 11.
Inductive load switching time
2.2
Test circuits
Figure 12.
Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
5/9
Package mechanical data
MD2103DFP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
6/9
MD2103DFP
Package mechanical data
TO-220FP mechanical data
mm.
inch
Dim.
Min.
4.40
2.5
Typ
Max.
4.60
2.7
Min.
Typ.
Max.
0.1
8
1
0.106
0.10
8
0.027
0.0
39
0.067
0.067
0.204
0.106
0.40
9
A
B
0.17
3
0.0
98
0.0
98
0.017
0.0
3
0
0.045
0.045
0.1
9
5
0.0
9
4
0.
393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.
9
5
2.40
10
F
F1
F2
G
G1
H
L2
L
3
L4
L5
L6
L7
Di
a
16
0.6
3
0
2
8
.6
9
.
8
0
2.
9
3
0.6
10.60
3
.6
1.126
0.
38
5
0.114
0
26
0.
3
54
0.11
8
1.204
0.417
0.141
0.645
0.
3
66
0.126
15.
9
0
9
16.40
9
.
3
0
3
.2
3
L3
L6
L7
Di
a
1
2 3
L5
L2
L4
7012510-I
7/9
Revision history
MD2103DFP
4
Revision history
Table 5.
Date
27-May-2008
Document revision history
Revision
Changes
1
First release
8/9
MD2103DFP
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its su
idiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and
vices described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and servi
s described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual prope
ights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or consider
d a
warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property containe
rein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED
WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED
WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN
ODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONL
BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale o
T products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
li
ity of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
9/9
