STMicroelectronics-P0130AA-2AL3

P0130AA  

®

SENSITIVE  

0.8A SCRs  

MAIN FEATURES:  

Symbol  

A

K

Value  

0.8  

Unit  

A

G

I

T(RMS)  

V

/V  

100  

1

V

DRM RRM  

I

µA  

GT  

DESCRIPTION  

The P0130AA is a gate sensitive SCR, packaged  

in TO-92, used in conjunction of a TN22 A.S.D™  

and of a resistor in electronic starter for fluores-  

cent tubelamps.  

TO-92  

ABSOLUTE RATINGS

(limiting values)  

Symbol  

Parameter  

Value  

Unit  

I

RMS on-state current (180° conduction angle)  

T(RMS)  

Tl = 55°C  

0.8  

A

A

A

IT  

Average on-state current (180° conduction angle)  

(AV)  

Tl = 55°C  

Tj = 25°C  

0.5  

I

Non repetitive surge peak on-state current  

tp = 8.3 ms  

tp = 10 ms  

8

7

TSM  

²

²

2

tp = 10ms  

F = 60 Hz  

tp = 20 µs  

Tj = 25°C  

0.24  

50  

A

S  

I

t  

I t Value for fusing  

Critical rate of rise of on-state current  

dI/dt  

Tj = 125°C  

A/µs  

I

= 2 x I

 

, tr

≤

100 ns  

G

GT  

I

Peak gate current  

Tj = 125°C  

Tj = 125°C  

1

A

GM  

P

Average gate power dissipation  

0.1  

W

G(AV)  

T

Storage junction temperature range  

Operating junction temperature range  

– 40 to + 150  

– 40 to + 125  

stg  

°C  

Tj  

May 2002 – Ed: 2  

1/5  

P0130AA  

ELECTRICAL CHARACTERISTICS

(Tj = 25°C, unless otherwise specified)  

P0130AA  

Unit  

Symbol  

Test Conditions  

I

MIN.  

MAX.  

MAX.  

MIN.  

0.1  

1

GT  

µA  

V

= 12 V  

R =

 

140

Ω  

D

L

V

0.8  

V

V

V

GT  

V

Tj = 125°C  

V

I

= V  

R =

 

3.3 k

Ω  

R

= 1 k

Ω  

0.1  

8

GD  

D

DRM  

L

GK  

V

MIN.  

= 10 µA  

RG  

RG  

I =

 

50 mA  

R

= 1 k

Ω  

MAX.  

MAX.  

5

mA  

mA  

I

T

GK  

H

I

I

= 1 mA  

R =

 

1 k

Ω  

GK  

6

L

G

dV/dt  

V

= 67

 

% V  

R

= 1 k

Ω  

Tj = 125°C  

Tj = 25°C  

Tj = 125°C  

Tj = 125°C  

Tj = 25°C  

Tj = 125°C  

MIN.  

MAX.  

MAX.  

MAX.  

MAX.  

MAX.  

25  

V/µs  

V

D

DRM  

GK  

V

I

= 1.6 A

 

tp = 380 µs  

1.95  

0.95  

600  

1

TM  

TM  

V

Threshold voltage  

V

t0  

R

Dynamic resistance  

m

Ω  

µA  

d

I

V

= V  

R

= 1 k

Ω  

GK  

DRM  

DRM RRM  

I

100  

RRM  

THERMAL RESISTANCES  

Symbol  

Parameter  

Value  

Unit  

°C/W  

°C/W  

R

R

Junction to case (DC)  

Junction to ambient (DC)  

80  

th(j-i)  

150  

th(j-a)  

PRODUCT SELECTOR  

Part Number  

V

o

ltage  

100V  

Sensitivity  

Package  

TO-92  

P0130AA  

1 µA  

2/5  

P0130AA  

ORDERING INFORMATION  

Blank  

P 01 30

 

A A  

1EA3  

SENSITIVE  

SCR  

SERIES  

PACKING MODE:  

1EA3

:

T

O-92 bulk  

VOLTAGE:  

A: 100V  

PACKAGE:  

A

:

T

O-92  

2AL3

:

T

O-92 ammopack  

CURRENT: 0.8A  

SENSITIVITY:  

30: 1µA  

OTHER INFORMATION  

Part Number  

Marking  

Weight  

Base Quantity  

Packing mode  

P0130AA 1EA3  

P0130AA 2AL3  

P0130AA  

P0130AA  

0.2 g  

0.2 g  

2500  

2000  

Bulk  

Ammopack  

Note

: xx = sensitivity,

 

y = voltage  

Fig. 1:

Maximum average power dissipation  

Fig. 2-1:

Average and D.C. on-state current  

versus average on-state current.  

versus lead temperature.  

IT(av)(A)  

P(W)  

1.1  

1.0  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

0.1  

0.0  

Tlead or Ttab (°C)  

0

25  

50  

75  

100  

125  

0.0  

0.1  

0.2  

0.3  

0.4  

0.5  

0.6  

Fig. 2-2:

Average and D.C. on-state current  

Fig. 3:

Relative variation of thermal impedance  

versus ambient temperature.  

junction to ambient versus pulse duration.  

K = [Zth(j-a)/Rth(j-a)]  

IT(av)(A)  

1.00  

1.2  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.10  

0.1  

0.0  

Tamb(°C)  

tp(s)  

0.01  

1E-2  

0

25  

50  

75  

100  

125  

1E-1  

1E+0  

1E+1  

1E+2 5E+2  

3/5  

P0130AA  

Fig. 4:

Relative variation of gate trigger current,  

holding current and latching current versus  

junction temperature (typical values).  

Fig. 5:

Relative variation of holding current versus  

gate-cathode resistance (typical values).  

IH[Rgk]/IH[Rgk=1k

Ω

]  

IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C  

6

5

4

3

2

1

Tj(°C)  

Rgk(k

Ω)  

0

-40 -20  

0

20  

40  

60  

80 100

 

120 140  

Fig. 6:

Relative variation of dV/dt immunity  

Fig. 7:

Relative variation of dV/dt immunity  

versus gate-cathode resistance (typical values).  

versus gate-cathode capacitance (typical values).  

dV/dt[Cgk] / dV/dt[Rgk=1k

Ω

]  

dV/dt[Rgk] / dV/dt[Rgk=1k

Ω

]  

10  

10.0  

8

6

4

1.0  

2

Rgk(k

Ω)  

Cgk(nF)  

0

0.1  

0

0.2 0.4 0.6 0.8

1

.

0

1

.

2

1

.

4

1

.

6

1

.

8 2.0  

0

1

2

3

4

5

6

7

Fig. 8:

 

Surge peak on-state current versus  

number of cycles.  

Fig. 9:

Non-repetitive surge peak on-state  

current for

 

sinusoidal pulse with width  

a

tp < 10 ms, and corresponding value of I²t.  

ITSM(A), I

2

t(A

2

s)  

ITSM(A)  

100.0  

8

7

tp=10ms  

6

Onecycle  

10.0  

1.0  

5

4

3

2

1

0

Non repetitive  

Tj initial=25°C  

Repetiti

v

e  

T

a

mb=25°C  

tp(ms)  

Numberofcycles  

100 1000  

0.1  

0.01  

1

10  

10.00  

1.00  

0.10  

4/5  

P0130AA  

Fig. 10:

On-state characteristics (maximum  

values).  

ITM(A)  

1E+1  

Ω

1E+0  

1E-1  

VTM(V)  

1E-2  

0.5  

1.0  

1.5 2.0  

2.5  

3.0  

3.5  

4.0 4.5  

PACKAGE MECHANICAL DATA  

TO-92 (Plastic)  

DIMENSIONS  

Millimeters  

RE

F

.  

Inches  

Typ. Max. Min. Typ. Max.  

A

Min.  

a

A

B

C

D

E

F

a

1.35  

0.053  

B

C

4.70  

0.185  

2.54  

0.100  

4.40  

0.173  

0.500  

12.70  

F

D

E

3.70  

0.50  

0.146  

0.019  

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  

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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved  

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5/5