STMicroelectronics-SCTL90N65G2V
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SCTL90N65G2V
Datasheet
Silicon carbide Power MOSFET 650
V
, 18 mΩ typ., 40 A
in a PowerFLAT 8×8 HV package
Features
5
V
R
max.
I
D
Order code
DS
DS(on)
4
3
2
SCTL90N65G2V
650 V
24 mΩ
40 A
1
PowerFLAT 8×8 HV
•
•
•
Very fast and robust intrinsic body diode
Low capacitances
Drain(5)
Source sensing pin for increased efficiency
Applications
Gate(1)
Driver
•
•
•
source(2)
Power
source(3, 4)
NG1DS2PS34D5
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2
nd
generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
Product status link
Product summary
Order code
Marking
SCTL90N65G2V
90N65G2V
PowerFLAT 8×8 HV
T
a
pe and reel
Package
Packing
DS13588
–
Rev 1
–
December 2020
For further information contact your local STMicroelectronics sales office.
SCTL90N65G2V
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
650
Unit
V
Drain-source voltage
Gate-source voltage
V
DS
-10 to 22
-5 to 18
40
V
V
A
GS
Gate-source voltage (recommended operating values)
Drain current (continuous) at T
= 25 °C
C
I
D
Drain current (continuous) at T
= 100 °C
40
C
I
Drain current (pulsed)
160
935
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
°C
°C
TOT
C
T
Storage temperature range
stg
-55 to 175
T
Operating junction temperature range
J
1. Value
limited by package.
2. Pulse
width is limited by safe operating area.
Table 2.
Thermal data
Parameter
Symbol
Value
0.16
45
Unit
°C/W
°C/W
R
thJC
Thermal resistance, junction-to-case
Thermal resistance, junction-to-board
1. When
mounted on an 1-inch² FR-4, 2 Oz copper board.
R
thJB
DS13588
–
Rev 1
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SCTL90N65G2V
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
DS
V
DS
V
DS
V
GS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
650
V
(BR)DSS
D
I
= 650 V, V
= 0 V
10
±100
5.0
µA
nA
V
DSS
GS
I
= 0
V
, V
=
–
10 to 22 V
GSS
GS
V
= V
, I
= 1 mA
1.8
3.2
18
27
GS(th)
GS
D
= 18
V
, I
=
4
0 A
24
D
R
Static drain-source on-resistance
mΩ
DS(on)
= 18 V, I
= 40 A, T
= 175 °C
D
J
Table 4.
Dynamic, based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
C
Input capacitance
–
–
–
–
–
–
–
3380
294
49
–
–
–
–
–
–
–
pF
pF
pF
Ω
iss
C
oss
V
= 400 V, f = 1 MHz, V
= 0 V
Output capacitance
Reverse transfer capacitance
Gate input resistance
T
o
tal gate charge
DS
GS
C
rss
R
f = 1 MHz, I
= 0 A
D
1
g
Q
157
43
nC
nC
nC
g
V
V
= 400
V
, I
=
5
0 A,
DD
D
Q
Gate-source charge
Gate-drain charge
gs
= -5 V to 18 V
GS
Q
42
gd
Table 5.
Switching energy (inductive load), based on HiP247 package option
Symbol
Parameter
Turn-on switching energy
Turn-off switching energy
Turn-on switching energy
Turn-off switching energy
Test conditions
Min.
Typ. Max. Unit
E
V
I
= -5 to 18
V
, V
=
4
00
V
,
–
–
–
–
130
210
135
200
–
–
–
–
µJ
µJ
µJ
µJ
on
GS
DD
= 50 A, R
= 2.2 Ω
E
D
G
off
E
V
I
= -5 to 18
V
, V
=
4
00
V
,
on
GS
DD
= 50 A, R
= 2.2 Ω, T
= 150 °C
E
D
G
C
off
Table 6.
Switching times, based on HiP247 package option
Symbol
Parameter
Turn-on delay time
Test conditions
Min.
Typ. Max. Unit
t
–
–
–
–
26
16
58
38
–
–
–
–
ns
ns
ns
ns
d(on)
t
f
Fall time
V
= 400
V
, I
=
5
0 A,
DD
D
R
= 2.2 Ω, V
= -5 V to 18 V
t
Turn-off delay time
Rise time
G
GS
d(off)
t
r
DS13588
–
Rev 1
page 3/14
SCTL90N65G2V
Electrical characteristics
Table 7.
Reverse SiC diode characteristics, based on HiP247 package option
Symbol
Parameter
Forward on voltage
Test conditions
I =
30 A, V
= 0 V
Min.
Typ. Max. Unit
V
–
–
–
–
2.5
17
–
–
–
–
V
ns
nC
A
SD
F
GS
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
rr
Q
I =
50 A, di/dt = 4000 A/µs, V
= 400 V
F DD
308
30
rr
I
RRM
DS13588
–
Rev 1
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SCTL90N65G2V
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Maximum transient thermal impedance
GADG271120201233SOA
GADG271120201247ZTH
I
D
Z
thJC
(A)
(°C/W)
I
DM
0.2
0.3
0.4
10
2
10
1
t
p
=1µs
duty=0.5
10
-1
t
p
=10µs
R
DS(on)
max.
t
p
=100µs
t
p
=1ms
t
p
=10ms
10
-2
0.1
0.05
R
thJC
= 0.16 °C/W
duty = t
on
/ T
10
0
V
(BR)DSS
T
J
= 175 °C
T
C
= 25 °C
Single pulse
Single pulse
t
on
T
10
-1
10
-3
10
-6
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
V
DS
(V)
t
p
(s)
Figure 3.
Typical output characteristics (T
J
= -50 °C)
Figure 4.
Typical output characteristics (T
J
= 25 °C)
GADG110720191014OCH_-50
GADG120720191341OCH_25
I
D
I
D
V
GS
= 16, 18, 20V
(A)
V
GS
= 18, 20V
(A)
120
120
V
GS
=16V
14 V
100
100
V
GS
=14V
12 V
80
80
V
GS
=12V
10V
60
40
60
40
V
GS
=10V
8V
20
0
20
0
6V
V
DS
(V)
V
GS
= 8V
V
DS
(V)
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Figure 5.
Typical output characteristics (T
J
= 175 °C)
Figure 6.
Typical transfer characteristics
GADG190720191145TCH
GADG190720191144OCH_175
I
D
(A)
I
D
(A)
V
GS
= 14, 16, 18, 20V
12 V
120
120
100
80
V
DS
= 3 V
100
80
10 V
8V
60
60
T
J
= 175 °C
T
J
= 25 °C
40
40
20
0
20
0
6V
0
4
8
12
16
V
GS
(V)
0
1
2
3
4
5
6
V
DS
(V)
DS13588
–
Rev 1
page 5/14
SCTL90N65G2V
Electrical characteristics (curves)
Figure 7.
Typical capacitance characteristics,
based on HiP247 package option
Figure 8.
Typical gate charge characteristics,
based on HiP247 package option
GADG110720191017CVR
GADG110720191018QVG
C
V
GS
(pF)
(V)
V
DD
= 400 V
I
D
= 50 A
C
ISS
15
10
5
10
3
C
OSS
10
2
f = 1 MHz
C
RSS
0
10
1
10
-1
-5
0
10
0
10
1
10
2
V
DS
(V)
30
60
90
120 150
Q
g
(nC)
Figure 9.
Total power dissipation
Figure 10.
Normalized on-resistance vs temperature
GADG271120201706PDT
GADG190720191331RON
P
TOT
(W)
R
DS(on)
(norm.)
800
600
400
1.6
V
GS
= 18 V
1.4
T
J
= 175 °C
1.2
200
0
1.0
0.8
-75
-25
25
75
125 175
T
C
(°C)
-75
-25
25
75
125 175
T
J
(°C)
Figure 11.
Normalized gate threshold vs temperature
Figure 12.
Normalized breakdown voltage vs temperature
GADG190720191331VTH
GADG190720191332BDV
V
GS(th)
V
(BR)DSS
(norm.)
(norm.)
1.4
1.06
I
D
= 1 mA
1.04
1.2
I
D
= 250 µA
1.0
0.8
1.02
1.00
0.6
0.4
0.98
0.96
-75
-25
25
75
125 175
T
J
(°C)
-75
-25
25
75
125 175
T
J
(°C)
DS13588
–
Rev 1
page 6/14
SCTL90N65G2V
Electrical characteristics (curves)
Figure 13.
Typical switching energy vs drain current,
based on HiP247 package option
Figure 14.
Typical switching energy vs temperature
GADG190720191335SLT
E
GADG110720191040SDC
E
(µJ)
V
DD
= 400 V, I
D
= 50 A,
V
GS
= -5 to 18
V
,
R
G
= 2.2 Ω
(µJ)
V
DD
= 400 V
V
GS
= -5 to 18 V
R
G
= 2.2 Ω
E
tot
360
E
tot
600
500
400
300
200
300
240
180
120
E
off
E
off
E
on
E
on
60
0
100
0
-25
25
75
125
175
T
J
(°C)
20
30
40
50
60
70
I
D
(A)
Figure 15.
Typical reverse conduction characteristics
(T
J
= -50 °C)
Figure 16.
Typical reverse conduction characteristics
(T
J
= 25 °C)
GADG110720191046RCC_-50
GADG110720191043RCC_25
I
D
I
D
(A)
(A)
V
GS
=-3, -5V
-20
-20
V
GS
=-5, -3V
-40
-40
-60
-80
-60
-80
-100
-100
V
GS
=0V
V
GS
=15V
V
GS
=5V
-120
V
GS
=0V
-120
V
GS
=10V
V
GS
=5V
V
GS
=10V
V
GS
=15V
-2 -1
-140
-6
-140
-5
-4
-3
V
DS
(V)
-6
-5
-4
-3
-2
-1
V
DS
(V)
Figure 17.
Typical reverse conduction characteristics (T
J
= 150 °C)
GADG110720191048RCC_150
I
D
(A)
-20
-40
V
GS
=-3, -5V
-60
-80
-100
V
GS
=15V
V
GS
=10V
-2 -1
V
GS
=0V
V
GS
=5V
-120
-140
-6
-5
-4
-3
V
DS
(V)
DS13588
–
Rev 1
page 7/14
SCTL90N65G2V
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
3.1
PowerFLAT 8×8 HV type A package information
Figure 18.
PowerFLAT 8×8 HV type A package outline
8222871_Rev_4
DS13588
–
Rev 1
page 8/14
SCTL90N65G2V
PowerFLAT 8×8 HV type A package information
Table 8.
PowerFLAT 8×8 HV type A mechanical data
Dimensions (in mm)
Ref.
Min.
0.75
0.00
0.10
0.90
7.90
7.90
7.10
2.65
4.25
Typ.
Max.
0.95
0.05
0.30
1.10
8.10
8.10
7.30
2.85
4.45
A
A1
A3
b
0.85
0.20
1.00
D
8.00
E
8.00
D2
E1
E2
e
7.20
2.75
4.35
2.00 BSC
0.50
L
0.40
0.60
Figure 19.
PowerFLAT 8×8 HV footprint
8222871_REV_4_footprint
Note:
All dimensions are in millimeters.
DS13588
–
Rev 1
page 9/14
SCTL90N65G2V
PowerFLAT 8×8 HV packing information
3.2
PowerFLAT 8×8 HV packing information
Figure 20.
PowerFLAT 8×8 HV tape
P0 (4.0±0.1)
P2 (2.0±0.1)
D0 ( 1.55±0.05)
T (0.30±0.05)
E (1.75±0.1)
D1 ( 1.5 Min)
P1 (12.00±0.1)
A0 (8.30±0.1)
K0 (1.10±0.1)
Note:
B
a
se and
B
u
lk q
u
a
n
tity 30
0
0
p
c
s
8229819_Tape_revA
Note:
All dimensions are in millimeters.
Figure 21.
PowerFLAT 8×8 HV package orientation in carrier tape
Pin 1
identification
ST
ST
ST
ST
DS13588
–
Rev 1
page 10/14
SCTL90N65G2V
PowerFLAT 8×8 HV packing information
Figure 22.
PowerFLAT 8×8 HV reel
8229819_Reel_revA
Note:
All dimensions are in millimeters.
DS13588
–
Rev 1
page 11/14
SCTL90N65G2V
Revision history
Table 9.
Document revision history
Changes
Date
Version
10-Dec-2020
1
First release.
DS13588
–
Rev 1
page 12/14
SCTL90N65G2V
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
PowerFLAT 8×8 HV type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
PowerFLAT 8×8 HV packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
DS13588
–
Rev 1
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SCTL90N65G2V
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
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T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS13588
–
Rev 1
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