STMicroelectronics-SCTW40N120G2V
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SCTW40N120G2V
Datasheet
Silicon carbide Power MOSFET 1200
V
,
6
2 mΩ typ., 36 A in an HiP247 package
Features
V
R max.
DS(on)
I
D
Order code
DS
SCTW40N120G2V
1200 V
100 mΩ
36 A
•
•
•
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (T
J
= 200 °C)
3
2
1
HiP247
Applications
•
•
•
D(2, TAB)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
G(1)
advanced and innovative 2
nd
generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
S(3)
AM01475v1_noZen
Product status link
Product summary
Order code
SCTW40N120G2V
Marking
Package
Packing
SCT40N120G2V
HiP247
Tube
DS13504
–
Rev 2
–
June 2021
For further information contact your local STMicroelectronics sales office.
SCTW40N120G2V
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
1200
Unit
V
Drain-source voltage
Gate-source voltage
V
DS
-10 to 22
-5 to 18
36
V
V
A
GS
Gate-source voltage (recommended operational values)
Drain current (continuous) at T
= 25 °C
C
I
D
Drain current (continuous) at T
= 100 °C
27
C
I
Drain current (pulsed)
108
278
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
°C
°C
TOT
C
T
Storage temperature range
stg
-55 to 200
T
Operating junction temperature range
J
1. Pulse
width is limited by safe operating area.
Table 2.
Thermal data
Parameter
Symbol
Value
0.63
40
Unit
°C/W
°C/W
R
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
thJC
thJA
R
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SCTW40N120G2V
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
GS
V
DS
V
DS
V
GS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
1200
V
(BR)DSS
D
I
= 0
V
, V
=
1
200 V
10
µA
nA
V
DSS
DS
I
= 0
V
, V
=
–
10 to 22 V
±100
4.90
100
GSS
GS
V
= V
, I
= 1 mA
1.90
2.45
62
GS(th)
GS
D
= 18
V
, I
=
2
0 A
D
R
Static drain-source on-resistance
mΩ
DS(on)
= 18 V, I
= 20 A, T
= 200 °C
137
D
J
Table 4.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
–
–
–
–
1233
56
15
1
–
–
–
–
–
–
–
pF
pF
pF
Ω
C
oss
V
= 800 V, f = 1 MHz, V
= 0 V
Output capacitance
Reverse transfer capacitance
Intrinsic gate resistance
T
o
tal gate charge
DS
GS
C
rss
R
G
f = 1 MHz, I
= 0 A
D
Q
61
13
25
nC
nC
nC
g
Q
V
= 800 V, V
= -5 to 18 V, I
= 20 A
DD GS
D
Gate-source charge
Gate-drain charge
gs
Q
gd
Table 5.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
E
Turn-on switching energy
Turn-off switching energy
V
= 800 V, I
= 20 A,
–
–
243
48
–
–
µJ
µJ
on
DD
D
R
= 4.7 Ω, V
= -5 V to 18 V
E
G
GS
off
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Rise time
Min.
Typ. Max. Unit
t
–
–
–
–
13.4
10.3
22
–
–
–
–
ns
ns
ns
ns
d(on)
t
V
= 800
V
, I
=
2
0 A,
f
DD
D
R
G
= 4.7 Ω, V
= -5 to 18 V
t
Turn-off delay time
Fall time
GS
d(off)
t
r
7.9
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SCTW40N120G2V
Electrical characteristics
Table 7.
Reverse SiC diode characteristics
Test conditions
Symbol
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Min.
Typ. Max. Unit
V
I
= 20 A, V
= 0 V
–
–
–
–
3.3
15
77
9
–
–
–
–
V
ns
nC
A
SD
SD
GS
t
rr
I
= 20 A, di/dt = 2000 A/μs,
SD
Q
rr
V
= 800
V
, V
=
–
5 to 18 V
GS
DD
I
RRM
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Rev 2
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SCTW40N120G2V
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Maximum transient thermal impedance
GADG021020200809SOA
GADG021020200810ZTH
I
D
(A)
Z
thJC
(°C/W)
0.4
0.3
0.2
I
DM
duty=0.5
10
2
10
1
10
-1
t
p
=1µs
0.1
t
p
=10µs
t
p
=100µs
0.05
10
-2
R
thJC
= 0.63 °C/W
duty = t
on
/ T
R
DS(on)
max.
10
0
t
p
=1ms
T
J
= 200 °C
T
C
= 25 °C
Single pulse
t
p
=10ms
Single pulse
t
on
T
V
(BR)DSS
V
DS
(V)
10
-1
10
-3
10
-1
10
0
10
1
10
2
10
3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Typical output characteristics (T
J
= 25°C)
Figure 4.
Typical output characteristics (T
J
= 200 °C)
GADG021020200810OCH25
GADG021020200811OCH200
I
D
I
D
(A)
(A)
14 V
V
GS
= 14, 16, 18, 20 V
70
12V
10V
V
GS
= 16, 18, 20 V
50
60
12 V
40
50
40
8V
30
10 V
30
20
20
6V
10
0
8 V
10
0
6 V
V
DS
(V)
0
2
4
6
8
0
2
4
6
8
10
V
DS
(V)
Figure 5.
Typical transfer characteristics
Figure 6.
Total power dissipation
GADG021020200811TCH
GADG021020200812PDT
I
D
P
TOT
(A)
(W)
T
J
= 25 °C
70
250
V
DS
= 8 V
60
T
J
= 200 °C
200
150
100
50
T
J
= 200 °C
40
30
20
50
0
10
0
0
4
8
12
16
V
GS
(V)
-75
-25
25
75
125 175
T
C
(°C)
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–
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SCTW40N120G2V
Electrical characteristics (curves)
Figure 7.
Typical gate charge characteristics
Figure 8.
Typical capacitance characteristics
GADG260420211149QVG
GADG021020200813CVR
V
GS
C
(V)
(pF)
V
DD
= 800 V
I
D
= 20 A
15
C
iss
10
3
10
5
10
2
C
rss
0
C
oss
10
3
f = 1 MHz
10
0
-5
0
10
1
10
-1
10
1
10
2
10
20
30
40
50
60
Q
g
(nC)
V
DS
(V)
Figure 10.
Typical switching energy vs junction
temperature
Figure 9.
Typical switching energy vs drain current
GADG021020200815SLD
E
(μJ)
GADG021020200816SLT
E
(μJ)
V
DD
= 800
V
,
R
G
= 4.7 Ω,
E
tot
V
DD
= 800 V, V
GS
= -5 to 18
V
,
R
G
= 4.7 Ω, I
D
= 20 A,
V
GS
= -5 to 18
V
,
E
tot
400
600
E
on
300
200
400
E
on
200
E
off
100
0
E
off
0
0
10
20
30
I
D
(A)
25
75
125
175
T
J
(°C)
Figure 11.
Normalized breakdown voltage vs temperature
Figure 12.
Normalized gate threshold vs temperature
GADG021020200834BDV
GADG021020200836VTH
V
(BR)DSS
V
GS(th)
(norm.)
(norm.)
1.06
I
D
= 1 mA
1.2
I
D
= 1mA
1.04
1.02
1.00
0.98
1.0
0.8
0.6
0.4
0.96
0.94
-75
-25
25
75
125 175
T
J
(°C)
-75
-25
25
75
125 175
T
J
(°C)
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SCTW40N120G2V
Electrical characteristics (curves)
Figure 14.
Typical reverse conduction characteristics
(T
J
= 25 °C)
Figure 13.
Normalized on-resistance vs temperature
GADG021020200836RON
R
DS(on)
(norm.)
GADG021020200840RCC25
I
D
(A)
2.2
-10
2.0
V
GS
= 18 V
-20
1.8
1.6
1.4
1.2
-30
V
GS
= -10 V
-40
V
GS
= 10 V
-50
-60
V
GS
= 0 V
1.0
0.8
-70
-80
-75
-25
25
75
125 175
T
J
(°C)
-8
-6
-4
-2
V
DS
(V)
Figure 15.
Typical reverse conduction characteristics
(T
J
= 200 °C)
Figure 16.
Typical switching energy vs gate resistance
GADG0306202108000SLG
E
(μJ)
GADG021020200843RCC200
I
D
(A)
V
DD
= 800 V
I
D
= 20 A
V
GS
= -5 to 18 V
E
tot
700
600
500
400
300
200
-10
V
GS
= -10 V
-20
E
on
V
GS
= 0 V
-30
-40
-50
E
off
-60
V
GS
= 10 V
100
0
-70
-80
0
4
8
12
16
20
R
G
(Ω)
-8
-6
-4
-2
V
DS
(V)
DS13504
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SCTW40N120G2V
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
3.1
HiP247 package information
Figure 17.
HiP247 package outline
8581091_4
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SCTW40N120G2V
HiP247 package information
Table 8.
HiP247 package mechanical data
mm
Dim.
Min.
4.85
2.20
1.90
1.00
2.00
3.00
0.40
19.85
15.45
1.45
5.30
14.20
3.70
18.30
3.55
5.65
5.30
Typ.
Max.
5.15
2.60
2.10
1.40
2.40
3.40
0.80
20.15
15.75
1.65
5.60
14.80
4.30
18.70
3.65
5.95
5.70
0.10
A
A1
A2
b
5.00
2.00
b1
b2
c
D
20.00
15.60
E
E3
e
5.45
L
L1
L2
P
18.50
Q
S
5.50
0.04
aaa
DS13504
–
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SCTW40N120G2V
Revision history
Table 9.
Document revision history
Changes
Date
Version
08-Oct-2020
1
First release.
Modified title, R
value, applications and description on cover page.
DS(on)
Minor text changes.
09-Jun-2021
2
DS13504
–
Rev 2
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SCTW40N120G2V
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
HiP247 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
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SCTW40N120G2V
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DS13504
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