STMicroelectronics-SCTWA90N65G2V-4
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SCTWA90N65G2V-4
Datasheet
Silicon carbide Power MOSFET 650
V
,
1
8 mΩ typ., 119 A in an HiP247-4 package
Features
V
R
DS(on)
max.
I
D
Order code
DS
SCTWA90N65G2V-4
650 V
24 mΩ
119 A
•
•
•
•
•
High speed switching performance
Very high operating junction temperature capability (T
J
= 200 °C)
Very fast and robust intrinsic body diode
4
3
2
1
Extremely low gate charge and input capacitances
Source sensing pin for increased efficiency
HiP247-4
Drain(1, TAB)
Applications
•
•
•
Gate(4)
Driver
source(3)
Description
Power
source(2)
This silicon carbide Power MOSFET device has been developed using ST’s
ND1TPS2DS3G4
advanced and innovative 2
nd
generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
Product status link
Product summary
Order code
Marking
SCTWA90N65G2V-4
SCT90N65G2V
HiP247-4
Package
Packing
Tube
DS13582
–
Rev 1
–
November 2020
For further information contact your local STMicroelectronics sales office.
SCTWA90N65G2V-4
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
650
Unit
V
DS
Drain-source voltage
Gate-source voltage
V
-10 to 22
-5 to 18
119
V
V
A
GS
Gate-source voltage (recommended operating values)
Drain current (continuous) at T
= 25 °C
C
I
D
Drain current (continuous) at T
= 100 °C
90
C
I
Drain current (pulsed)
220
565
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
°C
°C
TOT
C
T
Storage temperature range
stg
-55 to 200
T
Operating junction temperature range
j
1. Pulse
width is limited by safe operating area.
Table 2.
Thermal data
Parameter
Symbol
Value
0.31
40
Unit
°C/W
°C/W
R
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
thJC
thJA
R
DS13582
–
Rev 1
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SCTWA90N65G2V-4
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 3.
On/off states
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
V
= 0
V
, I
= 1
m
A
650
V
(BR)DSS
GS
D
Zero gate voltage drain
current
I
= 650 V, V
= 0 V
10
µA
DSS
DS
GS
I
V
DS
V
DS
V
GS
V
GS
= 0
V
, V
=
–
10 to 22 V
Gate-body leakage current
Gate threshold voltage
±100
5.0
nA
V
GSS
GS
V
= V
, I
= 1 mA
1.9
3.2
18
30
GS(th)
GS
D
= 18
V
, I
=
5
0 A
24
D
Static drain-source on-
resistance
R
DS(on)
mΩ
= 18 V, I
= 50 A, T
= 200 °C
D
J
Table 4.
Dynamic, based on HiP247 package option
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
3380
294
49
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
= 400 V, f = 1 MHz, V
= 0 V
Output capacitance
Reverse transfer capacitance
T
o
tal gate charge
pF
DS
GS
C
rss
Q
157
43
g
V
V
= 400
V
, I
=
5
0 A,
DD
D
Q
gs
Gate-source charge
Gate-drain charge
nC
Ω
= -5 V to 18 V
GS
Q
42
gd
R
g
f = 1 MHz, I
= 0 A
D
Gate input resistance
1
Table 5.
Switching energy (inductive load), based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ.
130
210
135
200
Max.
Unit
E
Turn-on switching energy
Turn-off switching energy
Turn-on switching energy
Turn-off switching energy
–
–
–
–
–
–
–
–
on
V
V
= 400 V, I
= 50 A, R
= 2.2 Ω,
DD
D
G
= -5 to 18 V
GS
E
off
µJ
E
on
V
V
= 400 V, I
= 50 A, R
= 2.2 Ω,
D G
DD
= -5 to 18
V
, T =
2
00 °C
GS
J
E
off
DS13582
–
Rev 1
page 3/13
SCTWA90N65G2V-4
Electrical characteristics
Table 6.
Switching times, based on HiP247 package option
Symbol
Parameter
Turn-on delay time
Fall time
Test conditions
Min.
Typ.
26
Max.
Unit
t
–
–
–
–
–
–
–
–
d(on)
t
V
R
= 400
V
, I
=
5
0 A,
16
f
DD
D
ns
= 2.2 Ω, V
= -5 V to 18
V
,
t
Turn-off delay time
Rise time
58
G
GS
d(off)
t
r
38
Table 7.
Reverse SiC diode characteristics, based on HiP247 package option
Symbol
Parameter
Forward on voltage
Test conditions
I =
30 A, V
= 0 V
Min.
Typ.
2.5
17
Max.
Unit
V
V
–
–
–
–
–
–
–
–
SD
F
GS
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ns
nC
A
I =
50 A, di/dt = 4000 A/µs,
F
Q
V
GS
V
DD
= V
= -5 V to 18
V
,
308
30
rr
GS
= 400
V
, T
=
2
5 °C
I
J
RRM
DS13582
–
Rev 1
page 4/13
SCTWA90N65G2V-4
Electrical characteristics (curves), based on HiP247 package option
2.1
Electrical characteristics (curves), based on HiP247 package option
Figure 1.
Safe operating area
Figure 2.
Maximum transient thermal impedance
GADG110720191010ZTH
Z
thJ-C
(°C/W)
GADG110720191006SOA
I
D
(A)
duty=0.5
I
DM
0.2
10
-1
0.1
10
2
0.05
0.02
t
p
=10µs
V
(BR)DSS
10
-2
0.01
t
p
=100µs
R
DS(on)
max.
10
1
R
thJ-C
= 0.31 (°C/W)
duty = t
on
/ T
10
-3
t
p
=1ms
Single pulse
T
C
= 25 °C
T
J
≤
200°C
single pulse
t
on
t
p
=10ms
T
10
-4
10
0
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
0
10
1
10
2
V
DS
(V)
Figure 3.
Typical output characteristics (T
J
= -50 °C)
Figure 4.
Typical output characteristics (T
J
= 25 °C)
GADG110720191014OCH_-50
GADG120720191341OCH_25
I
D
(A)
I
D
V
GS
= 18, 20V
(A)
V
GS
=16, 18, 20V
V
GS
=14V
V
GS
=12V
120
120
V
GS
=16V
100
100
80
V
GS
=14V
80
V
GS
=12V
V
GS
=10V
60
40
60
40
V
GS
=10V
V
GS
=8V
20
0
20
0
V
GS
=6V
V
DS
(V)
V
GS
= 8V
V
DS
(V)
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Figure 5.
Typical output characteristics (T
J
= 200 °C)
Figure 6.
Typical transfer characteristics
GADG110720191015OCH_200
GADG110720191016TCH
I
D
(A)
I
D
(A)
V
GS
=14,16,18, 20V
120
120
V
DS
= 3 V
V
GS
=12V
100
80
100
V
GS
=10V
V
GS
=8V
80
60
60
40
T
J
= 200 °C
T
J
= 25 °C
40
V
GS
=6V
20
0
20
0
0
0
4
8
12
16
V
GS
(V)
1
2
3
4
5
6
V
DS
(V)
DS13582
–
Rev 1
page 5/13
SCTWA90N65G2V-4
Electrical characteristics (curves), based on HiP247 package option
Figure 7.
Typical capacitances
Figure 8.
Typical gate charge
GADG110720191017CVR
GADG110720191018QVG
C
V
GS
(pF)
(V)
V
DD
= 400 V
I
D
= 50 A
C
ISS
15
10
5
10
3
C
OSS
10
2
f = 1 MHz
C
RSS
0
10
1
10
-1
-5
0
10
0
10
1
10
2
V
DS
(V)
30
60
90
120 150
Q
g
(nC)
Figure 9.
Maximum total power dissipation
Figure 10.
Typical drain-source on-resistance
GADG110720191023PDT
GADG110720191025RID
P
TOT
R
DS(on)
(W)
(mΩ)
500
20
V
GS
= 18 V
19
400
300
18
17
T
J
=200 °C
200
100
0
16
15
-75
-25
25
75
125 175
T
C
(°C)
0
20
40
60
80
100
I
D
(A)
Figure 12.
Normalized gate threshold voltage vs
temperature
Figure 11.
Normalized on-resistance vs temperature
GADG110720191026RON
R
DS(on)
(norm.)
GADG110720191027VTH
V
GS(th)
(norm.)
1.8
1.4
V
GS
= 18 V
1.6
1.2
I
D
= 250 µA
1.4
1.2
1.0
0.8
1.0
0.8
0.6
0.4
-75
-25
25
75
125 175
T
J
(°C)
-75
-25
25
75
125 175
T
J
(°C)
DS13582
–
Rev 1
page 6/13
SCTWA90N65G2V-4
Electrical characteristics (curves), based on HiP247 package option
Figure 13.
Normalized breakdown voltage vs temperature
Figure 14.
Typical switching energy vs drain current
GADG110720191027BDV
GADG110720191040SDC
V
(BR)DSS
(norm.)
E
(µJ)
V
DD
= 400 V
V
GS
= -5 to 18 V
R
G
= 2.2 Ω
E
tot
600
500
400
300
200
1.06
I
D
= 1 mA
1.04
E
off
1.02
1.00
E
on
0.98
0.96
100
0
-75
-25
25
75
125 175
T
J
(°C)
20
30
40
50
60
70
I
D
(A)
Figure 16.
Typical reverse conduction characteristics
(T
J
= -50 °C)
Figure 15.
Typical switching energy vs temperature
GADG110720191041SLT
E
GADG110720191046RCC_-50
I
D
(A)
(µJ)
V
DD
= 400
V
,
I
D
= 50 A,
V
GS
= -5 to 18
V
,
R
G
= 2.2 Ω
360
V
GS
=-3, -5V
E
tot
-20
300
240
180
120
-40
-60
-80
E
off
E
on
-100
V
GS
=0V
60
0
V
GS
=5V
-120
V
GS
=10V
V
GS
=15V
-2 -1
-140
-6
-25
25
75
125
175
T
C
(°C)
-5
-4
-3
V
DS
(V)
Figure 17.
Typical reverse conduction characteristics
(T
J
= 25 °C)
Figure 18.
Typical reverse conduction characteristics
(T
J
= 150 °C)
GADG110720191043RCC_25
GADG110720191048RCC_150
I
D
I
D
(A)
(A)
-20
-20
V
GS
=-5, -3V
-40
-40
V
GS
=-3, -5V
-60
-80
-60
-80
-100
-100
V
GS
=15V
V
GS
=0V
V
GS
=15V
V
GS
=0V
-120
V
GS
=5V
-120
V
GS
=10V
-2 -1
V
GS
=5V
V
GS
=10V
-140
-6
-140
-5
-4
-3
V
DS
(V)
-6
-5
-4
-3
-2
-1
V
DS
(V)
DS13582
–
Rev 1
page 7/13
SCTWA90N65G2V-4
Test circuits
3
Test circuits
Figure 19.
Switching times test circuit for resistive load
Figure 20.
Test circuit for gate charge behavior
V
DD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
R
L
µF
I
G
=CONST
V
DD
+
100Ω
V
i
≤
V
GS
D.U.
T
.
V
D
R
G
2200
µF
V
GS
+
V
G
2.7kΩ
47kΩ
D.U.
T
.
P
W
GND1
(driver signal)
GND2
(power)
1kΩ
P
W
GND1
GND2
AM15855v1
AM15856v1
Figure 21.
Test circuit for inductive load switching and
diode recovery times
Figure 22.
Unclamped inductive load test circuit
A
A
A
L
D
S
FAST
DIODE
L=100µH
G
D.U.
T
.
B
V
D
2200
µF
3.3
µF
3.3
µF
V
DD
1000
µF
B
B
+
V
DD
+
D
S
25Ω
I
D
G
R
G
D.U.
T
.
V
i
D.U.
T
.
P
w
GND2
GND1
GND1
GND2
AM15858v1
AM15857v1
Figure 24.
Switching time waveform
Figure 23.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
t
r
t
f
V
(BR)DSS
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
I
D
0
0
V
DD
V
DD
90%
AM01472v1
10%
AM01473v1
DS13582
–
Rev 1
page 8/13
SCTWA90N65G2V-4
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
HiP247-4 package information
Figure 25.
HiP247-4 package outline
8405626_2
DS13582
–
Rev 1
page 9/13
SCTWA90N65G2V-4
HiP247-4 package information
Table 8.
HiP247-4 mechanical data
mm
Dim.
Min.
4.90
2.31
1.90
1.16
1.15
0
Typ.
5.00
2.41
2.00
Max.
5.10
2.51
2.10
1.29
1.25
0.20
0.66
0.62
21.10
16.85
1.35
25.27
15.90
13.50
5.10
2.60
2.64
5.18
20.10
3.70
7.40
2.60
6.00
A
A1
A2
b
b1
b2
c
1.20
0.59
0.58
20.90
16.25
1.05
24.97
15.70
13.10
4.90
2.40
2.44
4.98
19.80
3.50
c1
D
0.60
21.00
16.55
1.20
D1
D2
D3
E
25.12
15.80
13.30
5.00
E1
E2
E3
e
2.50
2.54
e1
L
5.08
19.92
3.60
P
P1
P2
Q
2.40
5.60
2.50
6.15
S
T
9.80
6.00
10.20
6.40
U
DS13582
–
Rev 1
page 10/13
SCTWA90N65G2V-4
Revision history
Table 9.
Document revision history
Date
25-Nov-2020
Revision
Changes
1
First release.
DS13582
–
Rev 1
page 11/13
SCTWA90N65G2V-4
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves), based on HiP247 package option
. . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
HiP247-4 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS13582
–
Rev 1
page 12/13
SCTWA90N65G2V-4
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.
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. All other product or service
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS13582
–
Rev 1
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