STMicroelectronics-SD2942W
| Part # | STMicroelectronics-SD2942W |
Download  | STMicroelectronics-SD2942W |
SD2942
HF/VHF/UHF RF power N-channel MOSFET
Datasheet – production data
Features
Gold metallization
Excellent thermal stability
Common source push-pull configuration
P
OUT
= 350 W min. with 15 dB gain @ 175
MHz
Low R
DS(on)
Description
Figure 1: Pin connection
The SD2942 is a gold metallized N-channel MOS
field-effect RF power transistor. The SD2942
offers 25% lower R
DS(ON)
than industry standard
and 20% higher power saturation than ST
SD2932. These characteristics make the SD2942
ideal for 50 V DC very high power applications up
to 250 MHz.
Table 1: Device summary
Order code
SD2942W
Marking
Package
Packing
Tube
M244
Notes:
November 2016
DocID11736 Rev 5
1/17
This is information on a product in full production.
Contents
SD2942
Contents
2/17
DocID11736 Rev 5
SD2942
Electrical data
1
Electrical data
1.1
Maximum ratings
T
CASE
= 25 °C
Table 2: Absolute maximum ratings
Parameter
Symbol
Value
130
Unit
V
V
DGR
V
GS
Drain source voltage
Drain-gate voltage (R
GS
= 1 MΩ)
130
V
Gate-source voltage
Drain current
±40
V
I
D
40
A
P
DISS
T
J
Power dissipation
500
W
°C
°C
Max. operating junction temperature
Storage temperature
+200
-65 to +150
T
STG
Notes:
(1)
T
J
= 150 °C
1.2
Thermal data
Table 3: Thermal data
Parameter
Junction-to-case thermal resistance
Symbol
Value
Unit
R
thJC
0.35
°C/W
DocID11736 Rev 5
3/17
Electrical characteristics
SD2942
2
Electrical characteristics
T
CASE
= 25 °C
Table 4: Static
Test conditions
Symbol
Min. Typ. Max. Unit
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
I
DS
= 100 mA
V
DS
= 50 V
V
DS
= 0 V
130
V
µA
nA
V
100
250
4
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
I
D
= 250 mA
I
D
= 10 A
1.5
5
3.0
V
I
D
= 5 A
mho
pF
pF
pF
C
ISS
V
DS
= 50 V
V
DS
= 50 V
V
DS
= 50 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
415
236
17
C
OSS
C
RSS
Notes:
(1)
T
J
= 150 °C
Table 5: Dynamic
Test conditions
V
DD
= 50 V
I
DQ
= 500 mA
Symbol
Min.
Typ.
Max.
Unit
P
OUT
f = 175 MHz
350
15
W
V
DD
= 50 V
I
DQ
= 500 mA
P
OUT
= 350 W
f = 175 MHz
G
PS
17
61
dB
V
DD
= 50 V
I
DQ
= 500 mA
P
OUT
= 350 W
f = 175 MHz
η
D
55
%
V
DD
= 50 V
I
DQ
= 500 mA
P
OUT
= 350 W
f = 175 MHz
Load
mismatch
VSWR
5:1
All phase angles
4/17
DocID11736 Rev 5
SD2942
Impedance data
3
Impedance data
Figure 2: Impedance data
Table 6: Impedance data
f
Z
IN
(Ω)
Z
DL
(Ω)
250 MHz
230 MHz
200 MHz
175 MHz
100 MHz
50 MHz
1.3 – j 1.9
1.2 – j 1.8
1.1 – j 1.6
1.0 – j 1.4
1.8 – j 2.5
3.2 – j 4.4
1.9 + j 3.2
2.1 + j 3.7
2.7 +j 4.2
3.3 + j 4.8
7.5 + j 9
10 + j 12
DocID11736 Rev 5
5/17
Typical performance
SD2942
4
Typical performance
Figure 3: Capacitance vs. drain voltage
Figure 4: Drain current vs. gate voltage
Figure 5: Gate-source voltage vs. case temperature
Figure 6: Power gain vs. P
OUT
and case temperature
6/17
DocID11736 Rev 5
SD2942
Figure 7: Efficiency vs. case temperature
Typical performance
Figure 8: P
OUT
vs. input power and case temperature
Figure 10: P
OUT
vs. gate voltage and case
temperature
Figure 9: P
OUT
vs. input power and drain voltage
Figure 11: P
OUT
vs. drain voltage and input power
Figure 12: Maximum thermal resist vs. case
temperature
DocID11736 Rev 5
7/17
Typical performance
SD2942
Figure 13: Maximum safe operating area
Figure 14: Transient thermal impedance
8/17
DocID11736 Rev 5
SD2942
Typical performance
Figure 15: Transient thermal model
DocID11736 Rev 5
9/17
Test circuit
(175 MHz)
SD2942
5
Test circuit (175 MHz)
Figure 16: 175 MHz production test circuit schematic
Dimensions at component symbols are references for component placement. Gap
between ground and transmission lines is + 0.002{0.05} – 0.000{0.00} typ.
Table 7: 175 MHz test circuit part list
Component
Description
R1, R2, R5, R6
R3, R4
470 Ohm 1 W, surface mount chip resistor
360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent
560 Ohm 2 W, resistor 2 turn wire air-wound axial lead resistor
20 kOhm 3.09 W, 10 turn wirewound precision potentiometer
680 pF ATC 130B surface mount ceramic chip capacitor
R7, R8
R9, R10
C1, C4
C2, C3, C7, C8,
C17, C19, C20,
C21
10000 pF ATC 200B surface mount ceramic chip capacitor
C5
75 pF ATC 100B surface mount ceramic chip capacitor
ST40 25 pF – 115 pF miniature variable trimmer
C6
C9, C10
C11, C12, C13
47 pF ATC 100B surface mount ceramic chip capacitor
43 pF ATC 100B surface mount ceramic chip capacitor
C14, C15, C24,
C25
1200 pF ATC 700B surface mount ceramic chip capacitor
C16, C18
C22, C23
C26, C27
C28
470 pF ATC 700B surface mount ceramic chip capacitor
0.1 μF / 500 V surface mount ceramic chip capacitor
0.01 μF / 500 V surface mount ceramic chip capacitor
10 μF / 63 aluminum electrolytic axial lead capacitor
10/17
DocID11736 Rev 5
SD2942
Test circuit
(175 MHz)
Component
Description
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4
turns through ferrite bead
B1
B2
50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
R.F. transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03]
T1
L = 5.90[149.86] flexible coaxial cable 2 turns through ferrite multi-aperture
core
R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58]
L = 5.90[149.86]
T2
L1
Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible
coaxial cable 2 turns through ferrite bead
FB1, FB5
FB2, FB6
FB3
Shield bead
Multi-aperture core
Multilayer ferrite chip bead (surface mount)
Surface mount EMI shield bead
FB4
Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both
sides, εr = 2.55
PCB
Figure 17: 175 MHz test circuit photomaster
DocID11736 Rev 5
11/17
Test circuit
(175 MHz)
SD2942
Figure 18: 175 MHz test circuit
12/17
DocID11736 Rev 5
SD2942
Marking,
packing and shipping specifications
6
Marking, packing and shipping specifications
Table 8: Packing and shipping specifications
Order code
Packing
Tube
Pieces per tray
Dry pack humidity
< 10%
Lot code
SD2942W
15
Not mixed
Figure 19: SD2942 marking layout
Table 9: Marking specifications
Description
Symbol
Wafer process code
Assembly plant
W
CZ
xxx
VY
MAR
CZ
y
Last 3 digits of diffusion lot
Diffusion plant
Country of origin
Test and finishing plant
Assembly year
Assembly week
yy
DocID11736 Rev 5
13/17
Package information
SD2942
7
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
7.1
M244 package information
Figure 20: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package outline
14/17
DocID11736 Rev 5
SD2942
Package information
Table 10: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
C
D
E
F
G
H
I
5.59
5.84
5.08
3.02
3.28
9.65
9.91
19.81
20.82
10.92
11.18
27.94
33.91
0.10
34.16
0.15
J
1.52
2.59
1.78
K
L
2.84
4.83
10.03
21.59
5.84
M
N
10.34
22.10
DocID11736 Rev 5
15/17
Revision history
SD2942
8
Revision history
Table 11: Document revision history
Date
Revision Changes
18-Oct-2005
04-Jan-2006
14-Apr-2010
1
2
3
First issue.
Complete version.
Added
Figure 13
,
Figure 14
and
Figure 15
.
Inserted
Chapter 7: Marking, packing and shipping
specifications
.
25-Oct-2011
24-Nov-2016
4
5
16/17
DocID11736 Rev 5
SD2942
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications
, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of or
der
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics
–
All rights reserved
DocID11736 Rev 5
17/17
