STMicroelectronics-SD2943W

Part #STMicroelectronics-SD2943W
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STMicroelectronics-SD2943W
SD2943  
HF/VHF/UHF RF power N-channel MOSFET  
Datasheet – production data  
Features  
High power capability  
P

OUT

= 350 W min. with 22 dB gain@30 MHz  
P

SAT

= 450 W  
Low R

DS(on)  

Thermally enhanced packing for lower  
junction temperatures  
Gold metallization  
Excellent thermal stability  
Common source configuration  
Figure 1: Pin connection  
Description  
The SD2943 is a gold metallized N-channel MOS  
field-effect RF power transistor. It is used for 50 V  
DC large signal applications up to 150 MHz. The  
SD2943 offers a 20% higher power saturation  
than the SD2933, and is ideal for ISM  
applications where reliability and ruggedness are  
critical factors.  
Table 1: Device summary  
Order code  
SD2943W  
Marking  
SD294

Package  
Packing  
Plastic tray  
M177  
Notes:  
December 2016  
DocID11584 Rev 5  
1/13  
This is information on a product in full production.  
 

SD2943  
Electrical data  
1
Electrical data  
1.1  
Maximum ratings  
T

CASE

= 25 °C  
Table 2: Absolute maximum ratings  
Parameter  
Symbol  
Value  
130  
130  
±40  
40  
Unit  
V
V

(BR)DS

V

DGR  

V

GS  

Drain source voltage  
Drain-gate voltage (R

GS

= 1 MΩ)  
V
Gate-source voltage  
Drain current  
V
I

D  

A
P

DISS  

T

J  

Power dissipation  
648  
+200  
W
°C  
Max. operating junction temperature  
Avalanche energy, single pulse (ID = 53 A, 800  
μH coil)  
E

AS  

1100  
mJ  
°C  
T

STG  

Storage temperature  
-65 to +150  
Notes:  

(1)

T

J

= 150 °C  
1.2  
Thermal data  
Table 3: Thermal data  
Parameter  
Junction-to-case thermal resistance  
Symbol  
Value  
Unit  
R

thJC  

0.27  
°C/W  
DocID11584 Rev 5  
3/13  
 
 

Electrical characteristics  
SD2943  
2
Electrical characteristics  
T

CASE

= 25 °C  
Table 4: Static  
Test conditions  
Symbol  
Min. Typ. Max. Unit  
V

(BR)DS

I

DSS  

V

GS

= 0 V  
V

GS

= 0 V  
V

GS

= 20 V  
V

DS

= 10 V  
V

GS

= 10 V  
V

DS

= 10 V  
V

GS

= 0 V  
V

GS

= 0 V  
V

GS

= 0 V  
I

DS

= 200 mA  
V

DS

= 50 V  
V

DS

= 0 V  
130  
V
µA  
nA  
V
200  
500  
4
I

GSS  

V

GS(Q)  

V

DS(ON)  

G

FS  

I

D

= 250 mA  
I

D

= 20 A  
2
2
V
I

D

= 10 A  
10  
mho  
pF  
pF  
pF  
C

ISS  

V

DS

= 50 V  
V

DS

= 50 V  
V

DS

= 50 V  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
830  
470  
35  
C

OSS  

C

RSS  

Notes:  

(1)

T

J

= 150 °C  
Table 5: Dynamic  
Test conditions  
V

DD

= 50 V
 
I

DQ

= 250 mA  
Symbol  
Min.  
Typ.  
Max.  
Unit  
P

OUT  

450  
25  
f = 30 MHz  
350  
22  
W
V

DD

= 50 V
 
I

DQ

= 250 mA
 
P

OUT

= 350 W  
f = 30 MHz  
G

PS  

dB  
V

DD

= 50 V
 
I

DQ

= 250 mA
 
P

OUT

= 350 W  
f = 30 MHz  
η

D  

60  
65  
%
V

DD

= 50 V
 
I

DQ

= 250 mA
 
P

OUT

= 350 W  
f = 30 MHz  
Load  
mismatch  
VSWR  
3:1  
All phase angles  
Table 6: G

FS

sorts  
Symbol  
Value  
A
B
C
D
E
F
10 to 10.99  
11 to 11.99  
12 to 12.99  
13 to 13.99  
14 to 14.99  
15 to 15.99  
16 to 16.99  
17 to 18  
G
H
4/13  
DocID11584 Rev 5  
 

SD2943  
Impedance data  
3
Impedance data  
Figure 2: Impedance data  
Table 7: Impedance data  
f
Z

IN

(Ω)  
Z

DL

(Ω)  
30 MHz  
108 MHz  
175 MHz  
1.3 – j 2.9  
1.4 – j 2.4  
1.4 – j 2.2  
3.1 + j 2.3  
1.9 + j 1.4  
1.7 + j 1.6  
DocID11584 Rev 5  
5/13  

Typical performance  
SD2943  
4
Typical performance  
Figure 4: Drain current vs. gate voltage  
Figure 3: Capacitance vs. drain voltage  
Figure 5: Gate-source voltage vs. case temperature  
Figure 6: Maximum thermal resistance vs. case  
temperature  
6/13  
DocID11584 Rev 5  

SD2943  
Figure 7: Output power vs. input power  
Typical performance  
Figure 8: Output power vs. input power (at different  
temperature)  
Figure 9: Power gain vs. output power  
Figure 10: Efficiency vs. output power  
Figure 11: Output power vs. supply voltage  
Figure 12: Output power vs. gate voltage  
DocID11584 Rev 5  
7/13  

Test circuit
(175 MHz)  
SD2943  
5
Test circuit (175 MHz)  
Figure 13: 30 MHz test circuit schematic  
Dimensions at component symbols are references for component placement. Gap  
between ground and transmission files are 0.056[1.42] (typ.). Transmission line is  
not 1:1 scale. Input and
output transmission line are 50 Ω.  
Table 8: 30 MHz test circuit part list  
Component  
Description  
C1, C9  
C2, C3  
C4  
0.01 μF / 500 V surface mount ceramic chip capacitor  
750 pF ATC 700B surface mount ceramic chip capacitor  
300 pF ATC 700B surface mount ceramic chip capacitor  
C5, C10, C11,  
C14, C16  
10000 pF ATC 200B surface mount ceramic chip capacitor  
C6  
510 pF ATC 700B surface mount ceramic chip capacitor  
300 pF ATC 700B surface mount ceramic chip capacitor  
175-680 pF type 46 standard trimmer capacitor  
47 μF / 63 V aluminum electrolytic radial lead capacitor  
1200 pF ATC 700B surface mount ceramic chip capacitor  
100 μF / 63 V aluminum electrolytic radial lead capacitor  
1 kΩ 1 W surface mount chip resistor  
C7  
C8  
C12  
C13  
C15  
R1, R3  
R2  
560 Ω 2 W
wire-wound axil lead resistor  
T1  
HF 2-30 MHz surface mount 9:1 transformer  
RG –
142B/U 50 Ω coaxial cable OD = 0.165[4.18] L 15”[381.00] covered  
with 15”[381.00] tinned copper tubular brand 13/65” [5.1] width  
T2  
L1  
1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire  
1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire  
3 turns 14 AWG wire through fair rite toroid  
L2  
RFC1, RFC2  
FB1  
Surface mount shield bead  
8/13  
DocID11584 Rev 5  

SD2943  
Test circuit
(175 MHz)  
Component  
FB2  
PCB  
Description  
Toroid  
ULTRALAM 2000. 0.030” THK, εr = 2.55, 2 Oz ED CU
both sides  
Figure 14: 30 MHz test circuit  
Both the SD2933 and the SD2943 device use the same PCB.  
Figure 15: 30 MHz test circuit photomaster  
DocID11584 Rev 5  
9/13  

Marking,
packing and shipping specifications  
SD2943  
6
Marking, packing and shipping specifications  
Table 9: Packing and shipping specifications  
Pieces  
per tray  
Dry pack  
humidity  
Order code  
Packing  
G

FS

code  
Lot code  
Not mixed  
SD2943W  
Plastic tray  
25  
< 10%  
Not mixed  
Figure 16: SD2943 marking layout  
Table 10: Marking specifications  
Description  
Symbol  
W
Wafer process code  
G

FS

sort  
X
Assembly plant  
CZ  
xxx  
VY  
MAR  
CZ  
y
Last 3 digits of diffusion lot  
Diffusion plant  
Country of origin  
Test and finishing plant  
Assembly year  
Assembly week  
yy  
10/13  
DocID11584 Rev 5  

SD2943  
Package information  
7
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
7.1  
M177 (.550 DIA 4L NHERM WFLG) package information  
Figure 17: M177 (.550 DIA 4L N/HERM W/FLG) package outline  
Table 11: M177 (.550 DIA 4L N/HERM W/FLG) package mechanical data  
mm  
Dim.  
Min.  
5.72  
Typ.  
Max.  
A
B
C
D
E
F
G
H
I
5.97  
6.96  
6.73  
21.84  
22.10  
28.70  
13.84  
28.96  
14.10  
0.08  
2.49  
3.81  
0.18  
2.74  
4.32  
7.11  
J
27.43  
15.88  
28.45  
16.13  
K
DocID11584 Rev 5  
11/13  

Revision history  
SD2943  
8
Revision history  
Table 12: Document revision history  
Date  
Revision Changes  
18-Oct-2005  
04-Jan-2006  
1
2
First issue.  
Complete version.  
Inserted
Chapter 7: Marking, packing and shipping  
specifications
.  
24-Aug-2011  
3
Minor text changes.  
Updated
Table 2.: Absolute maximum rating
. Minor text  
changes.  
10-Aug-2015  
02-Dec-2016  
4
5
Minor text changes.  
12/13  
DocID11584 Rev 5  

SD2943  
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY  
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, and  
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der  
acknowledgement.  
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2016 STMicroelectronics
–
All rights reserved  
DocID11584 Rev 5  
13/13