STMicroelectronics-ST13007D
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ST13007D
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
■
IMPROVED SPECIFICATION:
– LOWER LEAKAGE CURRENT
– TIGHTER GAIN RANGE
– DC CURRENT GAIN PRESELECTION
– TIGHTER STORAGE TIME RANGE
HIGH VOLTAGE CAPABILITY
INTEGRATED FREE-WHEELING DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT
SPREAD FOR
RELIABLE OPERATION
■
■
■
■
3
2
1
■
■
■
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
TO-220
APPLICATIONS
■
UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
■
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Value
Unit
700
V
V
400
9
V
8
A
I
CM
Collector Peak Current
16
A
I
B
Base Current
4
A
I
BM
Base Peak Current
8
80
A
o
P
tot
W
o
C
o
C
Total Dissipation at T
c
≤
25 C
T
stg
T
j
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
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April 2003
ST13007D
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
R
thj-amb
Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
V
CE
= 700 V
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
10
0.5
µ
A
mA
o
V
CE
= 700 V
T
c
= 100
C
I
CEO
I
EBO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V
100
µ
A
µ
A
V
Emitter Cut-off Current
V
EB
= 9 V
(I
C
= 0)
100
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
400
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 A
I
C
= 5 A
I
C
= 8 A
I
C
= 5 A
I
B
= 0.4 A
I
B
= 1 A
I
B
= 2 A
I
B
= 1 A
0.8
1.5
2
V
V
V
V
o
T
c
= 100
C
3
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 A
I
C
= 5 A
I
C
= 5 A
I
B
= 0.4 A
I
B
= 1 A
I
B
= 1 A
1.2
1.6
1.5
V
V
V
o
T
c
= 100
C
h
FE
V
f
DC Current Gain
I
C
= 2 A
I
C
= 5 A
V
CE
= 5 V
V
CE
= 5 V
18
8
40
25
Diode Forward
Voltage
I
C
= 3 A
2.5
V
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A
I
B1
= 1 A
L = 200
µ
H (see
figure 1)
V
CL
= 250 V R
BB
= 0
Ω
V
BE(off)
= -5 V
t
s
t
f
1.7
90
2.3
150
µ
s
ns
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A
Ι
B1
= 1 A
L = 200
µ
H T
C
= 125
C
V
CL
= 250 V
R
BB
= 0
Ω
V
BE(off)
= -5 V
t
s
t
f
2.2
150
µ
s
ns
o
(see figure 1)
* Pulsed: Pulse duration = 300
µ
s, duty cycle 2 %.
2/7
ST13007D
Safe Operating Area
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
ST13007D
Diode Forward Voltage
Switching Time Resistive Load
Switching Time Inductive Load
Reverse Biased SOA
4/7
ST13007D
Figure 1:
Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2:
Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
ST13007D
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10.00
TYP.
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
16.40
0.645
0.102
13.00
2.65
14.00
2.95
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.260
0.154
15.25
6.20
15.75
6.60
3.50
3.93
2.60
DIA.
3.75
3.85
0.147
0.151
P011CI
6/7
ST13007D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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