STMicroelectronics-STB10N95K5
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STB10N95K5, STF10N95K5,
STP10N95K5, STW10N95K5
N-channel 950
V
,
0
.65
Ω
typ., 8 A Zener-protected SuperMESH™ 5
Power MOSFE
T
s
i
n D
2
PAK, TO-220F
P
,
T
O-220 and TO-247
Datasheet
–
production data
TAB
Features
3
Order codes
V
DS
R
DS(on)
max
I
D
P
TOT
1
D
2
PAK
3
STB10N95K5
STF10N95K5
STP10N95K5
STW10N95K5
130 W
30 W
2
1
TO-220FP
950 V
0.8
Ω
8 A
TAB
130 W
•
Worldwide best FOM (figure of merit)
•
Ultra low gate charge
3
3
2
2
1
1
•
100% avalanche tested
•
Zener-protected
TO-247
TO-220
Figure 1. Internal schematic diagram
Applications
‘ꢀꢁꢂꢃ7$%ꢄ
•
Switching applications
Description
These N-channel Zener-protected Power
*ꢀꢅꢄ
MOSFE
T
s
a
re designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
6ꢀꢆꢄ
AM01476v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB10N95K5
STF10N95K5
STP10N95K5
STW10N95K5
D
2
PAK
TO-220FP
TO-220
T
a
pe and reel
10N95K5
Tube
TO-247
January 2014
DocID024850 Rev 3
1/22
This is information on a product in full production.
Contents
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
±30
32
Symbol
Parameter
Unit
D
2
PAK,
TO-220, TO-247
TO-220FP
V
GS
I
D
Gate- source voltage
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
8
(1)
5
(1)
8
5
I
D
A
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
30
130
W
Max current during repetitive or single
pulse avalanche
2.5
A
Single pulse avalanche energy
E
AS
122
mJ
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
dv/dt
(3)
dv/dt
(4)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
4.5
50
V/ns
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
V
ISO
2500
V
(t=1 s; T
C
=25 °C)
T
j
T
stg
Operating junction temperature
Storage temperature
– 55 to 150
°C
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
4.
I
≤
8 A, di/dt
≤
100 A/
μ
s, V
≤
760 V
≤
V
DS(peak) (BR)DSS.
SD
V
SD
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220,
TO-247
TO-220FP
D
2
PAK
R
thj-case
Thermal resistance junction-case max
4.2
0.96
°C/W
°C/W
°C/W
R
thj-amb
Thermal resistance junction-amb max
62.5
62.5
(1)
Rt
hj-pcb
Thermal resistance junction-pcb max
30
1. When
mounted on 1 inch² FR-4, 2 Oz copper board
DocID024850 Rev 3
3/22
22
Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
2
Electrical characteristics
(
T
c
ase =25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
950
V
V
V
DS
= 950 V
1
μ
A
μ
A
Zero gate voltage, V
GS
= 0
drain current
I
DSS
DS
= 950
V
, T
C
=125 °C
50
Gate-body leakage
current
I
GSS
V
GS
= ± 20 V; V
DS
=0
V
DS
= V
GS
, I
D
= 100
μ
A
V
GS
= 10
V
, I
D
= 4 A
±10
5
μ
A
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
Static drain-source on-
resistance
0.65
0.8
Ω
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
630
50
–
–
pF
pF
C
oss
V
DS
=100
V
, f=1 MHz, V
GS
=0
Reverse transfer
capacitance
C
rss
–
–
–
0.6
77
28
–
–
–
pF
pF
pF
Equivalent capacitance time
related
(1)
C
o(tr)
V
GS
= 0, V
DS
= 0 to 760 V
f = 1 MHz open drain
Equivalent capacitance
energy related
(2)
C
o(er)
R
G
Q
g
Intrinsic gate resistance
T
o
tal gate charge
–
–
–
–
6.5
22
5
–
–
–
–
Ω
nC
nC
nC
V
DD
= 760 V, I
D
= 8 A
V
GS
=10 V
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
15
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical characteristics
Min. Typ.
Max Unit
Table 6. Switching times
Symbol
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
22
14
51
15
–
–
–
–
ns
ns
ns
ns
V
DD
= 475 V, I
D
= 4 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off-delay time
Fall time
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max Unit
A
I
SD
Source-drain current
–
8
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
–
–
–
–
–
–
–
–
32
A
V
(2)
V
SD
I
SD
= 8 A, V
GS
= 0
SD
= 8 A, di/dt = 100 A/
μ
s
V
DD
= 60 V
1.5
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
404
5.2
ns
μ
C
A
I
I
RRM
t
rr
25.5
596
6.9
ns
μ
C
A
I
SD
= 8 A, di/dt = 100 A/
μ
s
Q
rr
V
DD
= 60 V T
J
= 150 °C
I
RRM
23
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
Table 8. Gate-source Zener diode
Parameter Test
conditions
Symbol
Min Typ.
Max. Unit
30
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1mA, I
D
=0
–
–
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID024850 Rev 3
5/22
22
Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
Figure 3. Thermal impedance for D
2
PAK and
TO-220
TO-220
AM16133v1
I
D
(A)
10
10
µ
s
100
µ
s
1ms
1
0.1
10ms
Tj=150°C
T
c
=25°C
Single pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM16134v1
I
D
(A)
10
10
µ
s
100
µ
s
1
0.1
1ms
10ms
Tj=150°C
T
c
=25°C
Single pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
AM16135v1
I
D
(A)
10
10
µ
s
100
µ
s
1
0.1
1ms
10ms
Tj=150°C
T
c
=25°C
Single pulse
0.01
10
V
DS
(V)
0.1
1
100
6/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM16136v1
AM16137v1
I
D
(A)
I
D
(A)
16
V
GS
=10, 11V
V
DS
=20V
9V
8V
16
12
12
8
4
0
8
4
7V
6V
0
5
6
8
12
16
V
DS
(V)
9
10
V
GS
(V)
0
4
7
8
Figure 10. Gate charge vs gate-source voltage
Figure 11. Static drain-source on-resistance
AM16138v1
AM16139v1
R
DS(on)
V
GS
(V)
V
DS
(V)
(
Ω
)
V
DD
=760V
=8A
V
GS
=10V
V
DS
10
I
D
1.6
1.2
600
8
6
4
400
0.8
0.4
0
200
0
2
0
4
5
6
7
3
Q
g
(nC)
I
D
(A)
0
2
5
10
15
20
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM16140v1
AM16141v1
C
E
oss
(pF)
(µJ)
10
1000
Ciss
8
6
4
100
10
Coss
Crss
1
2
0
0.1
0.1
100
1
10
V
DS
(V)
0
600
V
DS
(V)
200
400
800
DocID024850 Rev 3
7/22
22
Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Normalized on-resistance vs
temperature
AM16142v1
AM16143v1
V
GS(th)
(norm)
R
DS(on)
(norm)
I
D
=4A
I
D
=100µA
1.2
V
GS
=10V
2.5
1
0.8
0.6
0.4
2
1.5
1
0.5
0
0.2
0
-100
-100
-50
0
100 150
T
J
(°C)
-50
0
100 150
T
J
(°C)
50
50
Figure 16. Normalized V
DS
vs temperature
Figure 17. Source-drain diode forward
characteristics
AM16145v1
AM16144v1
V
DS
S
D
(V)
0.9
V
(norm)
T
J
=-50°C
I
D
=1mA
1.1
T
J
=25°C
1.05
1
0.8
0.7
0.6
0.5
T
J
=150°C
0.95
0.9
0.85
T
J
(°C)
2
3
4
5
6
I
SD
(A)
7
-100
-50
0
100 150
50
Figure 18. Maximum avalanche energy vs
starting T
J
AM16146v1
E
AS
(mJ)
120
I
D
=2.5 A
V
DD
=50 V
100
80
60
40
20
0
0
25
50
75
T
J
(°C)
100 125
8/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID024850 Rev 3
9/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 25. D²PAK (TO-263) drawing
0079457_T
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
DocID024850 Rev 3
11/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 9. D²PAK (TO-263) mechanical data (continued)
mm
Dim.
Min.
Typ.
Max.
J1
L
2.49
2.29
1.27
1.30
2.69
2.79
1.40
1.75
L1
L2
R
0.4
V2
0°
8°
Figure 26. D²PAK footprint
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All
dimension are in millimeters
12/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 27. TO-220FP drawing
7012510_Rev_K_B
DocID024850 Rev 3
13/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
14/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 28. TO-220 type A drawing
ꢀꢀꢁꢂꢃꢄꢄBWSH$B5HYB7
DocID024850 Rev 3
15/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
16/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 29. TO-247 drawing
0075325_G
Table 12. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
DocID024850 Rev 3
17/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 12. TO-247 mechanical data (continued)
mm.
Dim.
Min.
Typ.
Max.
e
L
5.30
14.20
3.70
5.45
5.60
14.80
4.30
L1
L2
∅
P
∅
R
S
18.50
5.50
3.55
4.50
5.30
3.65
5.50
5.70
18/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Packaging mechanical data
5
Packaging mechanical data
Figure 30. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DocID024850 Rev 3
19/22
22
Packaging mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 31. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Tape slot
Full radius
in core for
tape start 25 mm min.
width
AM08851v2
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
20/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Revision history
6
Revision history
Table 14. Document revision history
Changes
Date
Revision
24-Jun-2013
1
First release.
– Added: D
2
PAK package
– Added: Thermal resistance junction-pcb max parameter
– Minor text changes
07-Oct-2013
29-Jan-2014
2
3
– Datasheet status promoted from preliminary data to production
data
– Minor text changes
DocID024850 Rev 3
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STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
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