STMicroelectronics-STB12NK80ZT4
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STB12NK80Z, STF12NK80Z,
STP12NK80Z, STW12NK80Z
N-channel 800
V
,
0
.65
Ω
typ., 10.5 A Zener-protected SuperMESH™
Power MOSFET in D
2
P
A
K, TO-220F
P
,
T
O-220 and TO-247
Datasheet — production data
Features
TAB
V
DSS
(@Tjmax)
Type
R
DS(on)
I
D
P
W
3
1
3
STB12NK80Z
STF12NK80Z
STP12NK80Z
STW12NK80Z
800V
800V
800V
800V
<0.75
Ω
10.5 A
190W
<0.75
Ω
10.5 A
40W
<0.75
Ω
10.5 A
190W
<0.75
Ω
10.5 A
190W
2
D
2
P
A
K
TO-220FP
1
TAB
■
Extremely high dv/dt capability
■
Improved esd capability
3
2
1
TO-247
TO-220
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing reliability
Figure 1.
Internal schematic diagram
D(2,TAB)
Applications
■
Switching applications
Description
G(1)
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics’ SuperMESH™ technolog
y
,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB12NK80Z
STF12NK80Z
STP12NK80Z
STW12NK80Z
12NK80Z
12NK80Z
12NK80Z
12NK80Z
D
2
P
A
K
TO-220FP
TO-220
T
a
pe and reel
T
u
be
T
u
be
TO-247
T
u
be
August 2012
Doc ID 9567 Rev 7
1/22
This is information on a product in full production.
22
Contents
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Electrical ratings
1
Electrical ratings
T
a
ble 2.
Absolute maximum ratings
Value
Unit
D
2
P
A
K
TO-220
TO-247
Symbol
Parameter
TO-220FP
V
DS
V
DGR
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20K
Ω
)
Gate-source voltage
800
800
3
0
V
V
V
10.5
(1)
6.6
(1)
Drain current (continuous) at T
C
= 25°C
10.5
6.6
A
A
I
D
Drain current (continuous) at T
C
=100°C
(2)
42
(1)
40
I
DM
Drain current (pulsed)
T
o
tal dissipation at T
C
= 25°C
Derating factor
42
A
W
P
TOT
190
1.52
0.
3
2
W/°C
kV
V
Vesd(G-S) G-S
ESD (HBM C= 100p
F
,
R
= 1.5k
Ω
)
4
V
ISO
Insulation withstand voltage (DC)
Peak diode recovery voltage slope
—
2500
dv/dt
(
3
)
4.5
V
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3
.
I
≤
10.5 A, di/dt
≤
200A/µs, V
≤
V
, T
≤
T
SD
DD
(BR)DSS j
JMAX
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220/
D²
P
A
K
TO-220FP TO-247
R
thj-case
Thermal resistance junction-case max
R
thj-a
Thermal resistance junction-ambient max
0.66
3
.1
0.66
50
°C/W
°C/W
62.5
Doc ID 9567 Rev 7
3
/22
Electrical ratings
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
T
a
ble 4.
Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
I
AS
10.5
A
Single pulse avalanche energy
E
AS
400
mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)
4/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified).
Table 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1mA, V
GS
= 0
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
(BR)DSS
800
V
V
DS
= 800
V
,
1
µA
µA
Peak diode recovery
voltage slope
I
DSS
V
DS
=800
V
,
T
c=125°C
50
Gate body leakage current
(V
GS
= 0)
I
GSS
V
GS
=
20V
10
4.5
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 10
V
,
I
D
= 5.25A
3
3
.75
Static drain-source on-
resistance
R
DS(on)
0.65
0.75
Ω
Table 6.
Dynamic
Parameter
Symbol
Test conditions
Min.
Typ.
Max.
Unit
(1)
g
fs
Forward transconductance
V
DS
=15
V
,
I
D
= 5.25A
Input capacitance
–
12
–
S
C
iss
C
oss
C
rss
2620
250
5
3
pF
pF
pF
Output capacitance
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
–
–
Reverse transfer
capacitance
Equivalent output
V
GS
=0, V
DS
=0V to 640V
capacitance
(2)
C
osseq
–
–
100
–
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
=640
V
,
I
D
= 10.5A
87
14
44
nC
nC
nC
V
GS
=10V
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
3
0
18
70
20
ns
ns
ns
ns
V
DD
=400
V
,
I
D
= 5.25A,
R
G
=4.7
Ω
,
V
GS
=10V
–
–
–
–
Off-voltage rise time
Fall time
t
r(Voff)
Off voltage rise time
Fall time
V
DD
=640
V
,
I
D
= 10.5A,
R
G
=4.7
Ω
,
V
GS
=10V
16
15
28
ns
ns
ns
t
f
t
c
Cross-over time
1. Pulsed:
pulse duration=
3
00µs, duty cycle 1.5%
2. is
defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
Doc ID 9567 Rev 7
5/22
Electrical characteristics
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
–
10.5
42
A
A
V
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
=10.5A, V
GS
=0
1.6
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=10.5A,
6
3
5
5.9
ns
µC
A
Q
rr
di/dt = 100A/µs,
–
I
RRM
V
DD
=100
V
,
T
j=150°C
18.5
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration=
3
00µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min Typ.
Max. Unit
3
0
Igs= 1mA
Gate-Source breakdown
voltage
BV
GSO
–
–
V
(Open drain)
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
6/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 and
Figure 3.
Thermal impedance for TO-220 and
D²
P
A
K
D²
P
A
K
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM1474
8
v1
I
D
(A)
1
10
10
10
Oper
a
tion in thi
s a
re
a
i
s
Limited
b
y m
a
x R
D
S
(on)
10
µs
100
µs
1m
s
0
10m
s
Tj=150°C
Tc=25°C
-1
S
inlge
p
u
l
s
e
-2
10
1
-1
0
2
10
V
D
S
(V)
10
10
10
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
Doc ID 9567 Rev 7
7/22
Electrical characteristics
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 9.
Transfer characteristics
Figure 8.
Output characteristics
Figure 10.
Transconductance
Figure 11.
Static drain-source on-resistance
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
8/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Electrical characteristics
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on-resistance vs
vs temperature
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized B
VDSS
vs temperature
Figure 18.
Maximum avalanche energy vs
temperature
Doc ID 9567 Rev 7
9/22
Test circuits
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
3
Test circuits
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
Figure 21.
Test circuit for inductive load
Figure 22.
Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 23.
Unclamped inductive waveform
10/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
T
a
ble 9.
Dim.
D²
P
A
K (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8.95
7.50
10
4.60
0.2
3
0.9
3
1.70
0.60
1.
3
6
9.
3
5
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.
3
0
L1
L2
R
0.4
V2
0°
8°
Doc ID 9567 Rev 7
11/22
Package mechanical data
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 24.
D²
P
A
K (TO-263) drawing
0079457_T
Figure 25.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3.50
9.75
Footprint
a. All
dimension are in millimeters
12/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
T
a
ble 10.
TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L
3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
3
0.6
10.6
3
.6
16.4
9.
3
3
3
.2
Doc ID 9567 Rev 7
1
3
/22
Package mechanical data
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 26.
TO-220FP drawing
7012510_Rev_K_B
14/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
T
a
ble 11.
TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.95
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.9
3
16.40
28.90
3
.75
3
.85
2.65
2.95
Doc ID 9567 Rev 7
15/22
Package mechanical data
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 27.
TO-220 type A drawing
00159
88
_typeA_Rev_
S
16/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Table 12.
TO-247 mechanical data
Package mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3
.40
0.80
20.15
15.75
5.60
14.80
4.
3
0
b1
b2
c
2.0
3
.0
0.40
19.85
15.45
5.
3
0
14.20
3
.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3
.55
4.50
5.
3
0
3
.65
5.50
5.70
Doc ID 9567 Rev 7
17/22
Package mechanical data
Figure 28.
TO-247 drawing
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
0075325_G
18/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Packaging mechanical data
5
Packaging mechanical data
Table 13.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
33
0
1.5
12.8
20.2
24.4
100
1
3
.2
26.4
3
0.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3
.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
2
3
.7
0.
3
5
24.
3
W
Doc ID 9567 Rev 7
19/22
Packaging mechanical data
Figure 29.
Tape
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
P2
Top cover
D
T
t
a
pe
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v2
Reel
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
20/22
Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Revision history
6
Revision history
Table 14.
Document revision history
Date
Revision
Changes
22-Jun-2004
28-Jan-2005
08-Sep-2005
3
1-Jul-2006
27-Apr-2007
2
3
4
5
6
Preliminary version.
Complete version.
The document has been reformatted.
Inserted new device in TO-220F
P
.
28-Aug-2012
7
Minor text changes in the cover page.
Doc ID 9567 Rev 7
21/22
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
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22/22
Doc ID 9567 Rev 7
