STMicroelectronics-STB160N75F3
| Part # | STMicroelectronics-STB160N75F3 |
Download  | STMicroelectronics-STB160N75F3 |
STB160N75F3
STP160N75F3 – STW160N75F3
N-channel 75V – 3.5m
Ω
– 120A – TO-220 – TO-247 – D
2
P
A
K
S
T
r
ipFET™ Power
MOSFET
Features
R
DS(on)
(max.)
Type
V
DSS
I
D
120 A
(1)
120 A
(1)
120 A
(1)
3
STB160N75F3
STP160N75F3
STW160N75F3
75V
75V
75V
3.7 m
Ω
3
2
2
1
1
TO-220
4 m
Ω
4 m
Ω
TO-247
1. Current
limited by package
3
1
■
Ultra low on-resistance
■
100% Avalanche tested
D²
P
A
K
Application
Figure 1.
Internal schematic diagram
■
Switching applications
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
S
T
r
ipFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
Device summary
Order codes
Marking
Package
D²
P
A
K
Packaging
STB160N75F3
STP160N75F3
STW160N75F3
160N75F3
160N75F3
160N75F3
T
a
pe & reel
T
u
be
TO-220
TO-247
T
u
be
October 2007
Rev 2
1/16
16
Contents
STB160N75F3 – STP160N75F3 – STW160N75F3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB160N75F3 – STP160N75F3 – STW160N75F3
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
V
GS
Drain-source voltage (V
GS
= 0)
Gate-source voltage
75
20
V
V
(1)
I
D
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
120
120
480
330
2.2
20
A
(1)
I
D
A
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25°C
Derating factor
W
W/°C
V/ns
dv/dt
(3)
Peak diode recovery voltage slope
(4)
Single pulse avalanche energy
600
mJ
°C
E
AS
T
j
Operating junction temperature
Storage temperature
-55 to 175
T
stg
1. Current
limited by package
2. Pulse
width limited by safe operating area
3. I
SD
< 120A, di/dt < 1100 A/µs, V
DD
< 60V, T
J
< T
JMAX
4. Starting
TJ = 25°C, I
D
= 60A, V
DD
= 25V
Table 3.
Thermal resistance
Parameter
Value
Symbol
Unit
TO-220
TO-247
D²PAK
Rthj-case Thermal
resistance junction-case max
Rthj-amb Thermal
resistance junction-ambient max
Rthj-pcb
(1)
Thermal resistance junction-pcb
0.45
50
°C/W
62.5
—
—
°C/W
°C/W
—
50
Maximum lead temperature for soldering
purpose
T
l
300
°C
1. When
mounted on 1 inch
² FR4 2 oz Cu
3/16
Electrical characteristics
STB160N75F3 – STP160N75F3 – STW160N75F3
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min. Typ.
Max Unit
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating,
V
(BR)DSS
75
V
10
µA
Zero gate voltage
drain current (V
GS
= 0)
I
DSS
V
DS
= Max
100 µA
rating,@125°C
Gate body leakage
current (V
DS
= 0)
V
GS
= 20V
I
GSS
±
200 nA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10
V
,
I
D
= 60A
V
GS(th)
Gate threshold voltage
2
4
V
TO-220
TO-247
D²
P
A
K
3.5
3.2
4
m
Ω
Static drain-source on
R
DS(on)
resistance
3.7 m
Ω
Table 5.
Dynamic
Parameter
Symbol
Test conditions
Min Typ Max
Unit
Input capacitance
C
iss
C
oss
C
rss
6750
1080
40
pF
pF
pF
Output capacitance
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
Reverse transfer
capacitance
Q
g
Q
gs
Q
gd
V
DD
=37.5
V
,
I
D
= 120A
V
GS
=10V
T
o
tal gate charge
Gate-source charge
Gate-drain charge
85
27
26
nC
nC
nC
4/16
STB160N75F3 – STP160N75F3 – STW160N75F3
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
22
65
ns
ns
ns
ns
V
DD
=37.5
V
,
I
D
= 60A,
R
G
=4.7
Ω
,
V
GS
=10
V
,
T
u
rn-off delay time
Fall time
100
15
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
120
480
A
A
(1)
Source-drain current (pulsed)
I
SDM
(2)
I
SD
=120A, V
GS
=0
Forward on voltage
1.5
V
V
SD
t
rr
I
SD
=120A, V
DD
= 20
V
,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
70
150
4.2
ns
nC
A
Q
rr
di/dt = 100 A/µs, Tj=25°C
I
RRM
1. Pulse
with limited by safe operating area
2. Pulsed:
pulse duration = 300µs, duty cycle 1.5%
5/16
Electrical characteristics
STB160N75F3 – STP160N75F3 – STW160N75F3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
TO-247
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220 /
TO-247
Figure 4.
Figure 6.
6/16
Safe operating area for D²
P
A
K
Thermal impedance for D²
P
A
K
Output characteristics
Transfer characteristics
STB160N75F3 – STP160N75F3 – STW160N75F3
Electrical characteristics
Figure 8.
Normalized BV
vs temperature
Figure 9.
Static drain-source on resistance
DSS
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Capacitance variations
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on resistance vs
vs temperature
temperature
7/16
Electrical characteristics
STB160N75F3 – STP160N75F3 – STW160N75F3
Figure 14.
Source-drain diode forward
characteristics
8/16
STB160N75F3 – STP160N75F3 – STW160N75F3
Test circuit
3
Test circuit
Figure 15.
Switching times test circuit for
resistive load
Figure 16.
Gate charge test circuit
Figure 17.
Test circuit for inductive load
switching and diode recovery times
Figure 18.
Unclamped inductive load test
circuit
Figure 19.
Unclamped inductive waveform
Figure 20.
Switching time waveform
9/16
Package mechanical data
STB160N75F3 – STP160N75F3 – STW160N75F3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/16
STB160N75F3 – STP160N75F3 – STW160N75F3
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
9
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/16
Package mechanical data
STB160N75F3 – STP160N75F3 – STW160N75F3
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
12/16
STB160N75F3 – STP160N75F3 – STW160N75F3
Package mechanical data
D²
P
A
K mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
A2
B
4.4
4.6
2.6
9
0.2
3
0.
93
1.7
0.17
3
0.0
98
0.001
0.027
0.044
0.017
0.04
8
0.
3
52
0.1
8
1
0.106
0.00
9
0.0
3
6
0.067
0.02
3
0.05
3
0.
3
6
8
2.4
9
0.0
3
0.7
B2
C
1.14
0.45
1.2
3
8
.
9
5
0.6
C2
D
1.
3
6
9
.
3
5
D1
E
8
0.
3
15
0.
33
4
10
10.4
0.
393
0.40
9
E1
G
8
.5
4.
88
15
5.2
8
15.
8
5
1.4
0.1
9
2
0.5
9
0
0.50
0.20
8
0.625
0.55
L
L2
L
3
M
1.27
1.4
1.75
3
.2
0.055
0.0
9
4
0.6
8
2.4
0.126
R
0.4
0.015
V2
0°
4°
13/16
Packaging mechanical data
STB160N75F3 – STP160N75F3 – STW160N75F3
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
14/16
STB160N75F3 – STP160N75F3 – STW160N75F3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
16/16
