STMicroelectronics-STB18N60M6
| Part # | STMicroelectronics-STB18N60M6 |
Download  | STMicroelectronics-STB18N60M6 |
STB18N60M6
Datasheet
N-channel 600
V
,
2
30 mΩ typ., 13 A, MDmesh M6
Power MOSFET in a D²PAK package
Features
TAB
V
R
DS(on)
max.
I
D
Order code
DS
STB18N60M6
600 V
280 mΩ
13 A
2
1
3
•
•
•
•
•
Reduced switching losses
Lower R
DS(on)
per area vs previous generation
Low gate input resistance
100% avalanche tested
D²
PAK
Zener-protected
D(2, TAB)
Applications
•
•
•
Switching applications
G(1)
LLC converters
Boost PFC converters
S(3)
AM01475V1
Description
The new MDmesh M6 technology incorporates the most recent advancements to the
well-known and consolidated MDmesh family of SJ MOSFE
T
s
. STMicroelectronics
builds on the previous generation of MDmesh devices through its new M6
technology, which combines excellent R
DS(on)
per area improvement with one of the
most effective switching behaviors available, as well as a user-friendly experience for
maximum end-application efficiency.
Product status link
Product summary
Order code
STB18N60M6
Marking
Package
Packing
18N60M6
D²PAK
T
a
pe and reel
DS12842
–
Rev 2
–
April 2019
For further information contact your local STMicroelectronics sales office.
STB18N60M6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
13
Unit
V
Gate-source voltage
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
= 25 °C
case
case
I
A
D
= 100 °C
8.2
I
38
A
DM
P
T
o
tal power dissipation at T
= 25 °C
case
110
15
W
TOT
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
V/ns
°C
100
T
stg
-55 to 150
T
j
Operating junction temperature range
1. Pulse
width is limited by safe operating area.
2.
3.
I
≤ 13 A, di/dt ≤ 400 A/μs, V
< V
, V
= 400 V
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
1.14
30
Unit
°C/W
°C/W
R
Thermal resistance junction-case
thj-case
R
thj-pcb
Thermal resistance junction-pcb
2
1.
When mounted on 1 inch
FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or non-repetitive
I
2.7
A
AR
(pulse width limited by T
)
Jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
210
mJ
AS
j
D
AR
DD
DS12842
–
Rev 2
page 2/16
STB18N60M6
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified).
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
T
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
V
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
DS
I
= 0
V
, V
=
6
00
V
,
Zero gate voltage drain current
µA
DSS
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
µA
V
GSS
DS
DS
V
V
I
= V
, I
= 250 µA
3.25
4
4.75
280
GS(th)
DS(on)
GS
D
R
= 6.5 A, V
= 10 V
GS
Static drain-source on-resistance
230
mΩ
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
650
45
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
2
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
123
4.6
16.8
4.5
pF
Ω
DS
GS
R
f = 1 MHz, I
= 0 A
D
G
Q
V
V
= 480
V
, I
=
1
3 A,
g
DD
D
= 0 to 10 V
Q
GS
Gate-source charge
gs
nC
Q
Gate-drain charge
–
8.4
–
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
16
7
Max.
Unit
t
V
= 300
V
, I
=
6
.5 A,
–
–
–
–
–
–
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V
t
GS
Rise time
r
ns
t
Turn-off delay time
28
d(off)
t
Fall time
–
9
–
f
DS12842
–
Rev 2
page 3/16
STB18N60M6
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
13
Unit
A
I
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
38
A
SDM
V
I
I
= 13 A, V
= 0 V
1.6
V
SD
GS
SD
t
= 13 A, di/dt = 100 A/µs,
= 60 V
Reverse recovery time
Reverse recovery charge
208
1.9
ns
µC
rr
SD
V
DD
Q
rr
I
Reverse recovery current
–
18
A
RRM
t
I
V
= 13 A, di/dt = 100 A/µs,
SD
Reverse recovery time
–
–
290
2.9
ns
rr
= 60
V
, T
=
1
50 °C
j
DD
Q
Reverse recovery charge
µC
rr
I
Reverse recovery current
–
20
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DS12842
–
Rev 2
page 4/16
STB18N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GIPG311020181054SOA
I
D
(A)
in this area is
Operation
limited by R
DS(on)
t
p
=1 µs
10
1
t
p
=10 µs
t
p
=100 µs
t
p
=1 ms
10
0
T
J
≤
150 °C
T
C
=25 °C
t
p
=10 ms
V
GS
=10 V
single pulse
10
1
10
-1
10
-1
10
0
10
2
V
DS
(V)
Figure 4.
Transfer characteristics
Figure 3.
Output characteristics
GIPG311020181052OCH
I
D
(A)
GIPG311020181052TCH
I
D
(A)
V
GS
=9 V
V
GS
=8 V
V
GS
= 10 V
30
25
20
15
10
30
25
20
15
10
V
DS
= 14 V
V
GS
=7 V
V
GS
=6 V
5
0
5
0
0
2
4
6
8
10
12
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GIPG311020181053QVG
GIPG311020181050RID
V
DS
(V)
V
GS
(V)
R
DS(on)
(mΩ)
V
DD
= 480 V
I
D
= 13 A
600
500
400
300
200
12
10
8
250
Q
g
V
GS
=10 V
V
DS
Q
gd
Q
gs
240
230
6
4
220
210
100
0
2
0
0
4
8
12
16
Q
g
(nC)
0
2
4
6
8
10
12
I
D
(A)
DS12842
–
Rev 2
page 5/16
STB18N60M6
Electrical characteristics (curves)
Figure 7.
Capacitance variations
Figure 8.
Output capacitance stored energy
GIPG311020181051CVR
GADG311020181207EOS
C
(pF)
E
OSS
(µJ)
6
10
3
10
2
5
4
3
2
C
ISS
C
OSS
f = 1 MHz
10
1
10
0
C
RSS
1
0
10
-1
10
0
10
1
10
2
V
DS
(V)
0
100 200 300 400 500 600
V
DS
(V)
Figure 9.
Normalized gate threshold voltage vs
temperature
Figure 10.
Normalized on-resistance vs temperature
GIPG311020181049RON
R
DS(on)
(norm.)
GIPG311020181049VTH
V
GS(th)
(norm.)
I
D
=250 A
1.1
2.5
V
GS
= 10 V
2.0
1.5
1.0
1.0
0.9
0.8
0.5
0.0
0.7
0.6
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 11.
Normalized V
(BR)DSS
vs temperature
Figure 12.
Source-drain diode forward characteristics
GIPG311020181051SDF
GIPG311020181050BDV
V
SD
(V)
V
(BR)DSS
(norm.)
1.1
1.10
1.05
1.00
0.95
T
j
= -50 °C
I
D
= 1 mA
1.0
0.9
T
j
= 25 °C
0.8
0.7
T
j
= 150 °C
0.90
0.85
0.6
0.5
0
2
4
6
8
10
12
I
SD
(A)
-75
-25
25
75
125
T
J
(°C)
DS12842
–
Rev 2
page 6/16
STB18N60M6
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
RL
R
L
2200
μF
3.3
μF
I
G
= CONST
2.7 kΩ
V
DD
+
D.U.
T
.
100 Ω
V
GS
V
D
R
G
pulse width
+
D.U.
T
.
V
G
V
GS
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
AM01472v1
10%
AM01473v1
DS12842
–
Rev 2
page 7/16
STB18N60M6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
DS12842
–
Rev 2
page 8/16
STB18N60M6
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 19.
D²PAK (TO-263) type A package outline
0079457_25
DS12842
–
Rev 2
page 9/16
STB18N60M6
D²PAK (TO-263) type A package information
Table 8.
D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.30
6.85
Typ.
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.70
7.25
A
A1
b
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.50
7.05
2.54
e1
H
4.88
15.00
2.49
2.29
1.27
1.30
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
L1
L2
R
0.40
V2
0°
8°
DS12842
–
Rev 2
page 10/16
STB18N60M6
D²PAK (TO-263) type A package information
Figure 20.
D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS12842
–
Rev 2
page 11/16
STB18N60M6
D²PAK packing information
4.2
D²PAK packing information
Figure 21.
D²PAK tape outline
DS12842
–
Rev 2
page 12/16
STB18N60M6
D²PAK packing information
Figure 22.
D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 9.
D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Max.
330
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
Min.
A0
B0
D
10.7
15.9
1.6
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DS12842
–
Rev 2
page 13/16
STB18N60M6
Revision history
Table 10.
Document revision history
Date
Version
Changes
15-Nov-2018
19-Apr-2019
1
2
First release.
Updated product status link table in cover page.
DS12842
–
Rev 2
page 14/16
STB18N60M6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
D²PAK (TO-263) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
D²PAK packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
DS12842
–
Rev 2
page 15/16
STB18N60M6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS12842
–
Rev 2
page 16/16
