STMicroelectronics-STB20NM60D

STB20NM60D  

N-channel 600V – 0.26

Ω

– 20A – D

2

P

A

K  

FDmesh™ Power MOSFET  

General features  

Type  

V

DSS  

R

DS(on)  

I

D  

Pw  

STB20NM60D  

600V  

<0.29

Ω

20A 45W  

■

High dv/dt and avalanche capabilities  

■

100% Avalanche tested  

3

1

■

Low input capacitance and gate charge  

■

Low gate input resistance  

D²

P

A

K  

■

Tight process control and high manufacturing  

yields  

Description  

Internal schematic diagram  

The FDmesh™ associates all advantages of  

reduced on-resistance and fast switching with an  

intrinsic fast-recovery body diode. It is therefore  

strongly recommended for bridge topologies, in  

particular ZVS phase-shift converters.  

Applications  

■

Switching application  

Order codes  

Part number  

Marking  

Package  

Packaging  

STB20NM60D  

B20NM60D  

D²

P

A

K  

T

a

pe & reel  

June 2006  

Rev 1  

1/13  

13  

Contents  

STB20NM60D  

Contents  

2/13  

STB20NM60D  

Electrical ratings  

1

Electrical ratings  

Table 1.  

Symbol  

Absolute maximum ratings  

Parameter  

Value  

Unit  

V

DS  

Drain-source voltage (V

GS

= 0)  

600  

600  

30  

V

V

V

DGR

Drain-gate voltage (R

GS

= 20 k

Ω

)  

V

GS  

I

D  

Gate- source voltage  

V

Drain current (continuous) at T

C

= 25°C  

Drain current (continuous) at T

C

= 100°C  

Drain current (pulsed)  

20  

A

I

D  

12.6  

80  

A

(1)  

I

DM  

P

TOT  

A

T

o

tal dissipation at T

C

= 25°C  

Derating factor  

192  

1.20  

20  

W

W/°C  

V/ns  

°C  

dv/dt

(2)

Peak diode recovery voltage slope  

T

j  

Operating junction temperature  

Storage temperature  

– 65 to 150  

T

stg  

°C  

1. Pulse

 

width limited by safe operating area  

2. I

SD

< 20A, di/dt < 400A/µs, V

DD

= 80%V

(BR)DSS  

Table 2.  

Symbol  

Thermal resistance  

Parameter  

Value  

Unit  

Rthj-case Thermal

 

resistance junction-case Max  

Rthj-amb Thermal

 

resistance junction-ambient Max  

0.65  

62.5  

°C/W  

°C/W  

Maximum lead temperature for soldering  

purpose  

T

l  

300  

°C  

Table 3.  

Symbol  

Avalanche data  

Parameter  

Value  

Unit  

Avalanche current, repetitive or not-repetitive  

(pulse width limited by T

j

max)  

I

AR  

10  

A

Single pulse avalanche energy  

E

AS  

700  

mJ  

(starting T

j

= 25 °C, I

D

= I

AR

, V

DD

= 35 V)  

3/13  

Electrical characteristics  

STB20NM60D  

2

Electrical characteristics  

(T  

=25°C unless otherwise specified)  

CASE  

Table 4.  

Symbol  

On/off states  

Parameter  

Test condictions  

Min Typ Max

 

Unit  

Drain-source breakdown  

voltage  

V

(BR)DSS  

I

D

= 250µA, V

GS

= 0  

600  

V

Zero gate voltage  

V

1

µA  

µA  

I

DSS  

drain current (V

GS

= 0)  

V

DS

= Max rating, T

C

= 125 °C  

10  

Gate-body leakage  

current (V

DS

= 0)  

10  

0

I

GSS  

V

GS

= 30V  

µA  

V

V

GS(th)  

R

DS(on)  

Gate threshold voltage  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10

V

,

I

D

= 10A  

3

4

5

Static drain-source on  

resistance  

0.26 0.29  

Ω

Table 5.  

Symbol  

Dynamic  

Parameter  

Test condictions  

Min Typ Max

 

Unit  

V

DS

> I

D(on)

x R

DS(on)max,  

I

D

= 10A  

(1)  

g

fs  

Forward transconductance  

9

S

C

iss  

C

oss  

C

rss  

Input capacitance  

1300  

500  

35  

pF  

pF  

pF  

Output capacitance  

V

DS

= 25

V

, f = 1

M

Hz, V

GS

= 0  

Reverse transfer capacitance  

(2)  

C

oss eq.  

Equivalent output capacitance

 

V

GS

= 0

V

,

V

DS

= 0V to 480V  

f=1 MHz Gate DC Bias = 0  

190  

pF  

R

G  

Gate input resistance  

T

e

st signal level = 20mV  

open drain  

2.7  

Ω

Q

g  

Q

gs  

Q

gd  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

V

DD

= 480

V

,

I

D

= 20A,  

V

GS

= 10V  

37  

10  

17  

52  

nC  

nC  

nC  

1. Pulsed:

 

Pulse duration = 300 µs, duty cycle 1.5 %  

2. C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS  

increases from 0 to 80%  

4/13  

STB20NM60D  

Electrical characteristics  

Min. Typ.

 

Max. Unit  

Table 6.  

Switching times  

Parameter  

Symbol  

Test condictions  

V

DD

= 300

V

,

I

D

= 10A  

R

G

= 4.7

Ω

V

GS

= 10V  

t

d(on)  

t

r  

T

u

rn-on delay time  

Rise time  

25  

12  

ns  

ns  

t

r(Voff)  

Off-voltage rise time  

Fall time  

8

ns  

ns  

ns  

V

DD

= 480

V

,

I

D

= 20A,  

R

G

= 4.7

Ω

,

V

GS

= 10V  

t

f  

22  

30  

t

c  

Cross-over time  

Table 7.  

Symbol  

Source drain diode  

Parameter  

Test condictions  

Min Typ. Max

 

Unit  

I

SD  

Source-drain current  

20  

80  

A

A

(1)  

I

SDM  

Source-drain current (pulsed)  

(2)  

V

SD  

Forward on voltage  

I

SD

= 20 A, V

GS

= 0  

1.5  

V

t

rr  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

I

SD

= 20 A, T

j

= 25°C  

di/dt =100A/µs,V

DD

=60V  

240  

1800  

16  

ns  

nC  

A

Q

rr  

I

RRM  

t

rr  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

I

SD

= 20 A, T

j

= 150°C  

di/dt =100A/µs,V

DD

=60V  

396  

2960  

20  

ns  

nC  

A

Q

rr  

I

RRM  

1. Pulse

 

width limited by safe operating area  

2. Pulsed:

 

Pulse duration = 300 µs, duty cycle 1.5 %.  

5/13  

Electrical characteristics  

STB20NM60D  

2.1  

Electrical characteristics (curves)  

Figure 1.

 

Safe operating area  

Figure 2.

 

Thermal impedance  

Figure 3.

 

Output characterisics  

Figure 4.

 

Transfer characteristics  

Figure 5.

 

Transconductance  

Figure 6.

 

Static drain-source on resistance  

6/13  

STB20NM60D  

Electrical characteristics  

Figure 7.

 

Gate charge vs gate-source voltage

 

Figure 8.

 

Capacitance variations  

Figure 9.

 

Normalized gate threshold voltage

 

Figure 10.

 

Normalized on resistance vs  

vs temperature  

temperature  

Figure 11.

 

Source-drain diode forward  

characteristics  

7/13  

Test circuit  

STB20NM60D  

3

Test circuit  

Figure 12.

 

Switching times test circuit for  

resistive load  

Figure 13.

 

Gate charge test circuit  

Figure 14.

 

Test circuit for inductive load  

switching and diode recovery times  

Figure 15.

 

Unclamped inductive load test  

circuit  

Figure 16.

 

Unclamped inductive waveform  

Figure 17.

 

Switching time waveform  

8/13  

STB20NM60D  

Package mechanical data  

4

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in ECO

P

A

CK®  

packages. These packages have a Lead-free second level interconnect . The category of  

second level interconnect is marked on the package and on the inner box label, in  

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  

conditions are also marked on the inner box label. ECO

P

ACK is an ST trademark.  

ECO

P

ACK specifications are available at:

9/13  

Package mechanical data  

STB20NM60D  

D

2

PAK MECHANICAL DATA  

TO-247 MECHANICAL DATA  

mm.  

inch  

TYP.  

DIM.  

MIN.  

4.4  

TYP  

MAX.  

4.6  

MIN.  

0.173  

0.098  

0.001  

0.027  

0.044  

0.017  

0.048  

0.352  

MAX.  

0.181  

0.106  

0.009  

0.036  

0.067  

0.023  

0.053  

0.368  

A

A1  

A2  

B

2.49  

0.03  

0.7  

2.69  

0.23  

0.93  

1.7  

B2  

C

1.14  

0.45  

1.23  

8.95  

0.6  

C2  

D

1.36  

9.35  

D1  

E

8

0.315  

0.334  

10  

10.4  

0.393  

E1  

G

8.5  

4.88  

15  

5.28  

15.85  

1.4  

0.192  

0.590  

0.050  

0.055  

0.094  

0.208  

0.625  

0.055  

0.068  

0.126  

L

L2  

L3  

M

1.27  

1.4  

1.75  

3.2  

2.4  

R

0.4  

0.015  

V2  

0º  

4º  

3

1

10/13  

STB20NM60D  

Packaging mechanical data  

5

Packaging mechanical data  

2

D PAK FOOTPRINT  

TAPE AND REEL SHIPMENT  

REEL MECHANICAL DATA  

mm  

MIN. MAX. MIN. MAX.  

330 12.992  

inch  

DIM.  

A

B

C

D

G

N

T

1.5  

12.8  

20.2  

24.4  

100  

0.059  

13.2 0.504

 

0.520  

0795  

26.4 0.960

 

1.039  

3.937  

30.4  

1.197  

BASE QTY  

BULK QTY  

1000  

TAPE MECHANICAL DATA  

1000  

mm  

inch  

DIM.  

MIN. MAX. MIN. MAX.  

10.5 10.7

 

0.413 0.421  

15.7 15.9

 

0.618 0.626  

A0  

B0  

D

1.5  

1.6 0.059

 

0.063  

D1  

E

1.59 1.61

 

0.062 0.063  

1.65 1.85

 

0.065 0.073  

F

11.4  

4.8  

3.9  

11.9  

1.9  

50  

11.6 0.449

 

0.456  

5.0 0.189

 

0.197  

4.1 0.153

 

0.161  

12.1 0.468

 

0.476  

2.1 0.075

 

0.082  

1.574  

K0  

P0  

P1  

P2  

R

T

0.25 0.35

 

0.0098 0.0137  

23.7 24.3

 

0.933 0.956  

W

* on sales type  

11/13  

Revision history  

STB20NM60D  

6

Revision history  

Table 8.  

Date  

08-Jun-2006  

Revision history  

Revision  

Changes  

1

First release  

12/13  

STB20NM60D  

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13/13