STMicroelectronics-STB26N60M2
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STB26N60M2
N-
channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2
Power MOSFET in a D²PAK package
Datasheet – production data
Features
V
DS
T
Jmax
@
R
DS(on)
max.
TAB
Order code
I
D
P
TOT
20
A
169
W
STB26N60M2
650 V
0.165 Ω
2
1
3
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
D²
PAK
Zener-protected
Applications
Figure 1: Internal schematic diagram
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STB26N60M2
26N60M2
D²PAK
Tape and reel
March 2017
DocID030419 Rev 1
1/15
This is information on a product in full production.
Contents
STB26N60M2
Contents
2/15
DocID030419 Rev 1
STB26N60M2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
20
Unit
V
GS
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
I
D
A
13
80
A
P
TOT
T
stg
Total dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
169
15
W
V/ns
°C
50
Storage temperature range
-55 to 150
T
j
Operating junction temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
≤ 20 A, di/dt=400 A/μs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
SD
(3)
V
≤ 480 V.
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
Value
0.74
30
Unit
°C/W
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Parameter
Symbol
Value
3.8
Unit
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
A
250
mJ
Notes:
(1)
Pulse width limited by T
jmax
(2)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
.
DocID030419 Rev 1
3/15
Electrical characteristics
STB26N60M2
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
600
V
V
GS
= 0 V, V
DS
= 600 V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 600 V,
100
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10 A
±10
4
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
2
3
Static drain-source on-
resistance
0.14 0.165
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
1360
88
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
Reverse transfer
capacitance
C
rss
–
–
2
–
–
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V
124
pF
R
G
Q
g
Intrinsic gate resistance
f = 1 MHz, I
D
= 0 A
–
–
–
–
4
–
–
–
–
Ω
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
D
= 20 A, V
GS
= 0
34
Q
gs
Q
gd
5.6
16.3
nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
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DocID030419 Rev 1
STB26N60M2
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
–
–
–
–
20.2
8
–
–
–
–
V
DD
= 300 V, I
D
= 10 A R
G
= 4.7
Ω,
ns
Turn-off delay time
Fall time
66
10
Table 8: Source-drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
–
–
20
80
A
A
Source-drain current
(pulsed)
Forward on voltage
V
GS
= 0 V, I
SD
= 20 A
1.6
V
Reverse recovery
time
t
rr
Q
rr
I
RRM
t
rr
360
5
ns
I
SD
= 20 A, di/dt = 100 A/µs,
Reverse recovery
charge
–
–
–
–
–
µC
A
Reverse recovery
current
27
556
8
Reverse recovery
time
ns
µC
A
I
SD
= 20 A, di/dt = 100 A/µs,
Reverse recovery
charge
Q
rr
I
RRM
Reverse recovery
current
29
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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5/15
Electrical characteristics
STB26N60M2
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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STB26N60M2
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 13: Source-drain diode forward
characteristics
Figure 12: Output capacitance stored energy
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7/15
Test circuits
STB26N60M2
3
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
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STB26N60M2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
D²PAK package information
Figure 20: D²PAK (TO-263) type A package outline
DocID030419 Rev 1
9/15
Package information
STB26N60M2
Table 9: D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.50
6.85
Typ.
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
A
A1
b
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.70
7.05
2.54
e1
H
4.88
15.00
2.49
2.29
1.27
1.30
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
L1
L2
R
0.40
V2
0°
8°
10/15
DocID030419 Rev 1
STB26N60M2
Package information
Figure 21: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
DocID030419 Rev 1
11/15
Package information
STB26N60M2
4.2
D²PAK packing information
Figure 22: D2PAK type A tape outline
12/15
DocID030419 Rev 1
STB26N60M2
Package information
Figure 23: D2PAK type A reel outline
Table 10: D²PAK type A tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
10.7
15.9
1.6
Min.
Max.
A0
B0
D
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
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Revision history
STB26N60M2
5
Revision history
Table 11: Document revision history
Revision
Date
Changes
First release.
10-Mar-2017
1
14/15
DocID030419 Rev 1
STB26N60M2
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DocID030419 Rev 1
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