STMicroelectronics-STB35N65DM2
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STB35N65DM2
N-
channel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2
Power MOSFET in a D²PAK package
Datasheet – preliminary data
Features
R
DS(on)
max.
TAB
Order code
V
DS
I
D
P
TOT
STB35N65DM2
650 V
0.110 Ω
32 A
250 W
2
1
3
Fast-recovery body diode
Extremely low gate charge and input
capacitance
D²
PAK
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Figure 1: Internal schematic diagram
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q
rr
)
and time (t
rr
) combined with low R
DS(on)
, rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STB35N65DM2
35N65DM2
D²PAK
Tape and reel
January 2018
DocID030840 Rev 2
1/15
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
Contents
STB35N65DM2
Contents
2/15
DocID030840 Rev 2
STB35N65DM2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
32
Unit
V
GS
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
I
D
A
20
90
A
P
TOT
T
stg
Total dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
250
50
W
V/ns
°C
50
Storage temperature range
-55 to 150
T
j
Operating junction temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
≤ 32 A, di/dt=900 A/μs, V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
SD
(3)
V
≤ 520 V
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-pcb
Value
0.5
Unit
Thermal resistance junction-case
°C/W
30
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Parameter
Symbol
Value
4
Unit
A
I
AR
Avalanche current, repetitive or non-repetitive
Single pulse avalanche energy
1150
mJ
Notes:
(1)
Starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
DocID030840 Rev 2
3/15
Electrical characteristics
STB35N65DM2
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Drain-source
Test conditions
V
GS
= 0 V, I
D
= 1 mA
Min. Typ.
650
Max. Unit
V
(BR)DSS
V
breakdown voltage
V
GS
= 0 V, V
DS
= 650 V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 650 V,
100
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 16 A
±5
5
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
Static drain-source
on-resistance
0.093 0.110
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Test conditions
Min. Typ. Max. Unit
–
–
2540
115
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
Reverse transfer
capacitance
C
rss
–
–
2.5
–
–
Equivalent output
capacitance
V
DS
= 0 to 520 V, V
GS
= 0 V
204
pF
R
G
Q
g
Intrinsic gate resistance
f = 1 MHz, I
D
= 0 A
–
–
–
–
4.2
–
–
–
–
Ω
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520 V, I
D
= 32 A,
V
GS
= 0 to 10 V
56.3
12.7
27.6
Q
gs
Q
gd
nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Min. Typ. Max. Unit
Turn-on delay time
Rise time
V
DD
= 325 V, I
D
= 16 A,
R
G
= 4.7
Ω, V
GS
= 10 V
–
–
–
23.4
23
–
–
–
ns
t
d(off)
Turn-off delay time
72
t
f
Fall time
–
10.4
–
4/15
DocID030840 Rev 2
STB35N65DM2
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
I
SD
Parameter
Source-drain current
–
–
32
90
A
A
Source-drain current
(pulsed)
t
rr
Forward on voltage
V
GS
= 0 V, I
SD
= 32 A
–
–
1.6
V
Reverse recovery time
100
ns
I
SD
= 32 A, di/dt = 100 A/µs,
V
DD
= 60 V
Reverse recovery
charge
Q
rr
–
0.42
µC
Reverse recovery
current
I
RRM
t
rr
–
–
–
8.4
205
1.8
A
Reverse recovery time
ns
µC
I
SD
= 32 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C
Reverse recovery
charge
Q
rr
Reverse recovery
current
I
RRM
–
17.6
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID030840 Rev 2
5/15
Electrical characteristics
STB35N65DM2
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
6/15
DocID030840 Rev 2
STB35N65DM2
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
DocID030840 Rev 2
7/15
Test circuits
STB35N65DM2
3
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/15
DocID030840 Rev 2
STB35N65DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
D²PAK (TO-263) type A2 mechanical data
Figure 20: D²PAK (TO-263) type A2 package outline
DocID030840 Rev 2
9/15
Package information
STB35N65DM2
Table 9: D²PAK (TO-263) type A2 package mechanical data
mm
Dim.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.70
7.30
Typ.
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
9.10
7.70
A
A1
b
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.90
7.50
2.54
e1
H
4.88
15.00
2.49
2.29
1.27
1.30
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
L1
L2
R
0.40
V2
0°
8°
10/15
DocID030840 Rev 2
STB35N65DM2
Package information
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID030840 Rev 2
11/15
Package information
STB35N65DM2
4.2
D²PAK (TO-263) packing information
Figure 22: D²PAK tape outline
12/15
DocID030840 Rev 2
STB35N65DM2
Package information
Figure 23: D²PAK reel outline
Table 10: D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
10.7
15.9
1.6
Min.
Max.
A0
B0
D
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DocID030840 Rev 2
13/15
Revision history
STB35N65DM2
5
Revision history
Table 11: Document revision history
Changes
Date
Revision
10-Jul-2017
1
Initial release
Minor text changed.
15-Jan-2018
2
14/15
DocID030840 Rev 2
STB35N65DM2
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–
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–
All rights reserved
DocID030840 Rev 2
15/15
