STMicroelectronics-STB35NF10T4
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STB35NF10
STP35NF10
N-channel 100V – 0.030
Ω
– 40A – D
2
P
A
K/TO-220
Low gate charge S
T
r
ipFET™ II Power MOSFET
General features
Type
V
DSS
R
DS(on)
I
D
STB35NF10
STP35NF10
100V
100V
<0.035
Ω
<0.035
Ω
40A
40A
3
1
■
Exceptional dv/dt capability
■
100% avalanche tested
3
2
1
D
2
PAK
TO-220
■
Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique S
T
r
ipFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB35NF10T4
STP35NF10
B35NF10
P35NF10
D
2
P
A
K
TO-220
T
a
pe & reel
T
u
be
June 2006
Rev 4
1/14
14
Contents
STB35NF10 – STP35NF10
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STB35NF10 – STP35NF10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 k
Ω
)
Gate- source voltage
100
100
20
V
V
V
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
40
A
I
D
28
A
(1)
I
DM
160
115
0.77
13
A
P
tot
T
o
tal dissipation at T
C
= 25°C
Derating Factor
W
W/°C
V/ns
mJ
dv/dt
(2)
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
(3)
E
AS
300
T
stg
T
j
-55 to 175
°C
Max. operating junction temperature
1. Pulse
width limited by safe operating area.
2. I
SD
≤
35A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
3. Starting
T
j
= 25 °C, I
D
= 20A, V
DD
= 80V
Table 2.
Rthj-case
Thermal data
Thermal resistance junction-case max
1.30
62.5
300
°C/W
°C/W
°C
Rthj-amb
T
J
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
3/14
Electrical characteristics
STB35NF10 – STP35NF10
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V
(BR)DSS
I
D
= 250µA, V
GS
=0
100
V
breakdown voltage
V
DS
= max ratings
Zero gate voltage
1
µA
µA
I
DSS
V
DS
= max ratings,
T
C
= 125°C
drain current (V
GS
= 0)
10
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
V
DS
= V
GS
, I
D
= 250µA
GS
= 10
V
,
I
D
= 17.5A
=
20V
100
4
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
2
3
Static drain-source on
resistance
V
0.030
0.035
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
g
fs
V
DS
= 15
V
,
I
D
= 17.5A
20
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
1550
220
95
pF
pF
pF
V
DS
= 25
V
, f =
1
MHz,
V
GS
= 0
Reverse transfer
capacitance
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
17
60
60
15
ns
ns
ns
ns
V
DD
= 50
V
,
I
D
= 17.5A
R
G
= 4.7
Ω
V
GS
= 10V
(see
Figure 12
)
T
u
rn-off delay time
Fall time
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80
V
,
I
D
= 35A,
V
GS
= 10V
55
12
20
nC
nC
nC
(see
Figure 13
)
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
4/14
STB35NF10 – STP35NF10
Electrical characteristics
Table 5.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
I
SD
40
A
A
Source-drain current
(pulsed)
(1)
I
SDM
160
(2)
V
SD
Forward on voltage
I
SD
= 35A, V
GS
= 0
1.5
V
I
SD
= 35A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
160
720
9
ns
nC
A
di/dt = 100A/µs,
V
DD
= 25
V
,
T
j
= 150°C
(see
Figure 14
)
Q
rr
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %
5/14
Electrical characteristics
STB35NF10 – STP35NF10
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/14
STB35NF10 – STP35NF10
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage
Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage
Figure 10.
Normalized on resistance vs
vs temperature
temperature
Figure 11.
Source-drain diode forward
characteristics
7/14
Test circuit
STB35NF10 – STP35NF10
3
Test circuit
Figure 12.
Switching times test circuit for
resistive load
Figure 13.
Gate charge test circuit
Figure 14.
Test circuit for inductive load
switching and diode recovery times
Figure 15.
Unclamped Inductive load test
circuit
Figure 16.
Unclamped inductive waveform
Figure 17.
Switching time waveform
8/14
STB35NF10 – STP35NF10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
9/14
Package mechanical data
STB35NF10 – STP35NF10
D
2
PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
10/14
STB35NF10 – STP35NF10
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/14
Packaging mechanical data
STB35NF10 – STP35NF10
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
12/14
STB35NF10 – STP35NF10
Revision history
6
Revision history
Table 6.
Date
Revision history
Revision
Changes
21-Jun-2004
26-Jun-2006
3
4
Complete version
New template, no content change
13/14
STB35NF10 – STP35NF10
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14/14
