STMicroelectronics-STB50N65DM6
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STB50N65DM6
Datasheet
N-channel 650
V
,
7
4 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a D²PAK
package
Features
TAB
V
R
DS(on)
max.
I
D
Order code
DS
STB50N65DM6
650 V
91 mΩ
33 A
2
1
3
•
•
•
•
•
•
Fast-recovery body diode
Lower R
DS(on)
per area vs previous generation
D²
PAK
Low gate charge, input capacitance and resistance
100% avalanche tested
D(2, TAB)
Extremely high dv/dt ruggedness
Zener-protected
G(1)
Applications
•
Switching applications
S(3)
AM01476v1_tab
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Q
rr
), recovery time (t
rr
) and excellent
improvement in R
DS(on)
per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
Product summary
Order code
Marking
STB50N65DM6
50N65DM6
D²PAK
Package
Packing
T
a
pe and reel
DS13187
–
Rev 2
–
July 2020
For further information contact your local STMicroelectronics sales office.
STB50N65DM6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
33
Unit
V
V
Gate-source voltage
GS
I
Drain current (continuous) at T
= 25 °C
A
D
C
I
Drain current (continuous) at T
= 100 °C
21
A
D
C
I
Drain current (pulsed)
120
250
100
1000
100
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
V/ns
A/µs
V/ns
T
stg
Storage temperature range
-55 to 150
°C
T
Operating junction temperature range
J
1. Pulse
width limited by safe operating area
2.
3.
I
≤ 33 A, V
(peak) < V
, V
= 400V
(BR)DSS DD
SD
DS
V
≤ 520 V
DS
Table 2.
Thermal data
Symbol
Parameter
Value
0.5
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-pcb
R
30
thj-pcb
1. When
mounted on an 1-inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T
Value
Unit
I
9
A
AR
)
jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
560
mJ
AS
j
D
AR
DD
DS13187
–
Rev 2
page 2/14
STB50N65DM6
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
Drain-source breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
650
(BR)DSS
GS
D
V
V
T
= 0
V
, V
=
6
50 V
5
µA
GS
DS
I
= 0
V
, V
= 650 V
Zero gate voltage drain current
DSS
GS
DS
100
µA
C
I
V
V
= 0
V
, V
=
±
25 V
Gate body leakage current
Gate threshold voltage
±5
µA
V
GSS
DS
GS
V
= V
, I
= 250 µA
3.25
4
4.75
GS(th)
DS
GS
GS
D
Static drain-source on-
resistance
R
DS(on)
V
= 10
V
, I
=
1
6.5 A
D
74
91
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
2300
165
3
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
–
–
–
–
–
–
C
oss
V
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
rss
= 0 to 520
V
, V
= 0 V
C
oss eq.
414
1.7
DS
GS
R
g
f = 1 MHz, I
= 0 A
D
–
–
–
–
–
–
–
–
Q
g
52.5
14.5
22.5
nC
nC
nC
V
V
= 520
V
, I
=
3
3 A
DD
D
Q
gs
Gate-source charge
GS
Q
Gate-drain charge
gd
1.
C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
when VDS increases from 0
OSS
to 80% V
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
19.2
12
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
d(on)
V
V
= 325
V
, I
=
1
6.5 A, R
= 4.7 Ω
D G
DD
t
Rise time
ns
r
GS
t
Turn-off delay time
Fall time
59.6
9.6
ns
d(off)
t
ns
f
DS13187
–
Rev 2
page 3/14
STB50N65DM6
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
33
Unit
A
I
–
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
120
1.6
A
SDM
V
V
= 0
V
, I
=
3
3 A
SD
V
GS
SD
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
130
0.65
10
ns
µC
A
rr
I
= 33 A, di/dt = 100 A/µs,V
= 60 V
DD
SD
Q
rr
I
RRM
t
226
2.32
20.6
ns
µC
A
rr
I
= 33 A, di/dt = 100 A/µs V
= 60
V
,
DD
SD
j
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DS13187
–
Rev 2
page 4/14
STB50N65DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Maximum transient thermal impedance
Z
GADG261120190945SOA
GADG211120191320ZTH
thj-c
I
D
(A)
(°C/W)
I
DM
0.3
0.4
duty = 0.5
10
2
10
1
10
0
t
p
=1 µs
10
-1
0.2
t
p
=10 µs
0.1
0.5
R
DS(on)
max.
t
p
=100 µs
V
(BR)DSS
10
-2
Single pulse
R
= 0.5°C/W
thJ-C
10
-1
10
-2
T
C
= 25 °C
T
J
≤
150 °C
single pulse
t
p
=1 ms
V
DS
(V)
t
p
=10 ms
10
2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
-1
10
0
10
1
t
p
(s)
Figure 3.
Typical output characteristics
Figure 4.
Typical transfer characteristics
GADG090720191225OCH
GADG090720191225TCH
I
D
(A)
I
D
(A)
V
GS
= 9, 10 V
100
100
V
GS
= 8 V
V
DS
= 20 V
80
80
60
40
V
GS
= 7 V
60
40
V
GS
= 6 V
20
0
20
0
V
GS
= 5 V
12
0
4
8
16
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Typical gate charge characteristics
Figure 6.
Typical drain-source on-resistance
GADG090720191225QVG
V
DD
= 520
V
,
I
D
= 33 A
GADG090720191226RID
V
DS
(V)
V
GS
(V)
R
DS(on)
(mΩ)
600
500
400
300
200
12
10
8
80
Q
g
78
76
Q
gs
Q
gd
V
GS
= 10 V
6
74
72
4
100
0
2
70
68
0
0
10
20
30
40
50
60
Q
g
(nC)
0
5
10
15
20
25
30
I
D
(A)
DS13187
–
Rev 2
page 5/14
STB50N65DM6
Electrical characteristics (curves)
Figure 7.
Typical capacitance characteristics
Figure 8.
Typical output capacitance stored energy
GADG090720191226CVR
GADG090720191228EOS
C
E
OSS
(pF)
(µJ)
24
10
4
20
16
12
8
C
ISS
10
3
10
2
f = 1 MHz
C
OSS
10
1
10
0
C
RSS
4
0
10
-1
10
0
10
1
10
2
V
DS
(V)
0
100 200 300 400 500 600
V
DS
(V)
Figure 9.
Normalized gate threshold vs temperature
Figure 10.
Normalized on-resistance vs temperature
GADG090720191229VTH
GADG090720191229RON
V
GS(th)
R
DS(on)
(norm.)
(norm.)
1.1
2.5
1.0
2.0
A
ID = 250 µ
V
GS
= 10 V
0.9
0.8
1.5
1.0
0.7
0.6
0.5
0.0
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Normalized breakdown voltage vs temperature
Figure 12.
Typical reverse diode forward characteristics
GADG090720191230VTH
GADG090720191230SDF
V
(BR)DSS
V
SD
(norm.)
(V)
1.1
1.10
Tj = -50 °C
I
D
= 1 mA
1.05
1.0
0.9
Tj = 25°C
1.00
0.95
0.8
Tj = 150°C
0.7
0.90
0.85
0.6
0.5
-75
-25
25
75
125
T
j
(°C)
0
5
10
15
20
25
30
I
SD
(A)
DS13187
–
Rev 2
page 6/14
STB50N65DM6
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
RL
R
L
2200
μF
3.3
μF
I
G
= CONST
2.7 kΩ
V
DD
+
D.U.
T
.
100 Ω
V
GS
V
D
R
G
pulse width
+
D.U.
T
.
V
G
V
GS
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
V
DD
1000
µF
B
+
3.3
µF
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
AM01472v1
10%
AM01473v1
DS13187
–
Rev 2
page 7/14
STB50N65DM6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
DS13187
–
Rev 2
page 8/14
STB50N65DM6
D²PAK (TO-263) type A2 package information
4.1
D²PAK (TO-263) type A2 package information
Figure 19.
D²PAK (TO-263) type A2 package outline
0079457_A2_26
DS13187
–
Rev 2
page 9/14
STB50N65DM6
D²PAK (TO-263) type A2 package information
Table 8.
D²PAK (TO-263) type A2 package mechanical data
mm
Dim.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.70
7.30
Typ.
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
9.10
7.70
A
A1
b
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.90
7.50
2.54
e1
H
4.88
15.00
2.49
2.29
1.27
1.30
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
L1
L2
R
0.40
V2
0°
8°
Figure 20.
D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint_26
DS13187
–
Rev 2
page 10/14
STB50N65DM6
D²PAK packing information
4.2
D²PAK packing information
Figure 21.
D²PAK tape outline
DS13187
–
Rev 2
page 11/14
STB50N65DM6
D²PAK packing information
Figure 22.
D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 9.
D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Max.
330
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
Min.
A0
B0
D
10.7
15.9
1.6
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DS13187
–
Rev 2
page 12/14
STB50N65DM6
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DS13187
–
Rev 2
page 14/14
