STMicroelectronics-STB6N60M2
| Part # | STMicroelectronics-STB6N60M2 |
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STB6N60M2,
STD6N60M2
N-channel 600 V, 1.06
Ω
typ., 4.5 A MDmesh™ M2
Power MOSFE
T
s
i
n D
2
PAK and DPAK packages
Datasheet
–
production data
Features
V
DS
T
Jmax
@
R
DS(on)
max
Order code
I
D
STB6N60M2
STD6N60M2
TAB
TAB
650 V
1.2
Ω
4.5 A
3
3
1
1
•
Extremely low gate charge
D
2
PAK
DPAK
•
Excellent output capacitance (C
oss
) profile
•
100% avalanche tested
•
Zener-protected
Applications
Figure 1. Internal schematic diagram
•
Switching applications
, TAB
Description
These devices are N-channel Power MOSFE
T
s
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Table 1. Device summary
Order code
Marking
Package
Packing
STB6N60M2
STD6N60M2
D
2
PAK
DPAK
6N60M2
T
a
pe and reel
May 2016
DocID024772 Rev 3
1/21
This is information on a product in full production.
Contents
STB6N60M2, STD6N60M2
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
GS
I
D
Gate-source voltage
25
4.5
2.9
18
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
A
(1)
I
DM
A
P
TOT
dv/dt
(2)
dv/dt
(3)
T
stg
T
o
tal dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
60
W
15
V/ns
°C
50
Storage temperature range
-55 to 150
T
j
Operating junction temperature range
1. Pulse
width limited by safe operating area
2.
3.
I
≤
4.5 A, di/dt
≤
400 A/µs; V
≤
480 V
< V
, V
=400 V
(BR)DSS DD
SD
DS peak
V
DS
Table 3. Thermal data
Parameter
Value
Symbol
Unit
D
2
PAK
DPAK
R
thj-case
Thermal resistance junction-case max
R
thj-pcb
Thermal resistance junction-pcb max
(1)
2.08
°C/W
30
50
°C/W
1. When
mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
I
AR
1
A
)
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
= 50 V)
E
AS
86
mJ
DocID024772 Rev 3
3/21
21
Electrical characteristics
STB6N60M2, STD6N60M2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
600
V
breakdown voltage
V
V
DS
= 600 V
DS
= 600 V, T
C
=125 °C
(1)
1
µA
µA
Zero gate voltage
I
DSS
drain current (V
GS
= 0)
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
= ± 25 V
±10
4
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
Static drain-source
V
GS
= 10
V
,
I
D
= 2.25 A
on-resistance
1.06
1.2
Ω
1. Defined
by design, not subject to production test
Table 6. Dynamic
Symbol
Parameter
Input capacitance
Output capacitance
Test conditions
Min.
Typ.
232
14
Max. Unit
C
iss
–
–
–
–
pF
pF
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
C
rss
Reverse transfer
capacitance
–
–
–
0.7
71
–
–
–
pF
pF
Ω
Equivalent output
capacitance
Coss eq.(1)
V
DS
= 0 to 480 V, V
GS
= 0
f = 1 MHz open drain
Intrinsic gate
resistance
R
G
6.5
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
8.2
1.7
4.2
–
–
–
nC
nC
nC
V
DD
= 480
V
,
I
D
= 4.5 A,
V
GS
= 10 V
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
9.5
7.4
–
–
–
–
ns
ns
ns
ns
V
DD
= 300 V, I
D
= 1.65 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
Turn-off delay time
Fall time
24
22.5
4/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Electrical characteristics
Min. Typ. Max.
Unit
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
I
SD
–
–
–
–
–
–
–
–
–
4.5
18
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
t
rr
I
SD
= 4.5 A, V
GS
= 0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
274
1.47
10.7
376
ns
µC
A
I
SD
= 4.5 A, di/dt = 100 A/µs
Q
rr
I
RRM
t
rr
ns
µC
A
I
SD
= 4.5 A, di/dt = 100 A/µs
Q
rr
V
DD
= 60
V
, T
j
= 150 °C
1.96
10.5
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID024772 Rev 3
5/21
21
Electrical characteristics
STB6N60M2, STD6N60M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK
Figure 3. Thermal impedance for D
2
PAK
AM15885v1
I
D
(A)
10
10µs
100µs
1
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
10
100
V
DS
(V)
0.1
1
Figure 4. Safe operating area for DPAK
Figure 5. Thermal impedance for DPAK
AM15875v1
I
D
(A)
10
10µs
100µs
1
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
10
100
V
DS
(V)
0.1
1
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM15876v1
AM15877v1
I
D
(A)
8
I
D
(A)
8
V
= 8, 9, 10 V
GS
V
= 20 V
DS
V
= 7 V
GS
7
6
5
7
6
5
4
V
= 6 V
GS
4
3
2
3
2
V
= 5 V
GS
1
0
1
0
V
= 4 V
GS
5
10
V
10
15
4
20
V
DS
(V)
2
6
8
GS
(V)
0
0
6/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
AM15879v1
AM
V
1
5
D
8
S
7
8v1
(V)
V
GS
R
DS(on)
(
Ω
)
(V)
V
DD
= 480V
V
GS
=10V
12
I
D
= 4.5 A
1.120
500
400
300
200
100
V
DS
10
8
1.100
1.080
1.060
6
4
1.040
1.020
2
0
0
4
Q
g
(nC)
1
2
3
I
D
(A)
0
4
0
6
2
8
Figure 10. Capacitance variations
C
(pF)
Figure 11. Normalized V
DS
vs temperature
AM15880v1
AM15881v1
V
DS
(norm)
1.11
I
D
=1 mA
1000
100
10
1.09
1.07
Ciss
1.05
1.03
1.01
0.99
0.97
0.95
0.93
Coss
Crss
1
0.1
0.1
-50
0
T
J
(°C)
10
100
V
DS
(V)
-25
25 50
1
75 100
Figure 12. Normalized gate threshold voltage vs
Figure 13. Normalized on-resistance vs
temperature
temperature
AM15882v1
AM15883v1
V
GS(th)
R
DS(on)
(norm)
(norm)
V
=10 V
GS
2.3
2.1
1.9
1.7
1.5
1.3
1.1
1.1
I
D
=250 µA
1.0
0.9
0.8
0.7
0.9
0.7
0.5
-50
-50
-25
0
25 50
T
J
(°C)
-25
0
50
100
T
J
(°C)
75 100
25
75
DocID024772 Rev 3
7/21
21
Electrical characteristics
STB6N60M2, STD6N60M2
Figure 14. Source-drain diode forward
characteristics
AM15884v1
V
SD
(V)
1.4
1.2
T
J
=-50°C
1
0.8
0.6
0.4
T
J
=150°C
T
J
=25°C
0.2
0
0
1
2
3
I
SD
(A)
4
8/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
I
G
=CONST
R
L
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
DD
2200
V
D
R
G
V
G
μ
F
2.7k
Ω
47k
Ω
V
GS
D.U.T.
P
W
1k
Ω
P
W
AM01469v1
AM01468v1
Figure 17. est circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
B
V
D
D
S
2200
μ
F
3.3
μ
F
FAST
DIODE
L=100
μ
H
V
DD
G
D.U.T.
B
3.3
μ
F
1000
μ
F
I
D
B
V
DD
25
Ω
D
G
V
i
D.U.T.
R
G
S
P
w
AM01471v1
AM01470v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
t
on
t
off
9
ꢅ%5ꢆ’66
t
r
td
off
t
f
td
on
9
‘
90%
10%
90%
,
‘0
10%
V
GS
V
DS
,
‘
0
0
9
”
9
”
90%
10%
$0ꢀꢁꢂꢃꢄYꢁ
AM01473v1
DocID024772 Rev 3
9/21
21
Package information
STB6N60M2, STD6N60M2
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Package information
4.1
D²PAK(TO-263) package information
Figure 21. D²PAK (TO-263) type A package outline
ꢀꢀꢃꢇꢂꢈꢃB$BUHYꢄꢄ
DocID024772 Rev 3
11/21
21
Package information
STB6N60M2, STD6N60M2
Table 9. D²PAK (TO-263) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.50
6.85
8.70
7.05
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
12/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Package information
Figure 22. D²PAK footprint
(a)
)RRWSULQW
a. All
dimension are in millimeters
DocID024772 Rev 3
13/21
21
Package information
STB6N60M2, STD6N60M2
4.2
DPAK(TO-252) package information
Figure 23. DPAK (TO-252) type C outline
ꢀꢀꢉꢊꢃꢃꢄB&Bꢄꢁ
14/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Package information
Table 10. DPAK (TO-252) type C package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.25
6.50
2.186
4.70
9.80
1.40
2.30
1.01
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
b4
c
5.33
6.10
c2
D
D1
E
6.60
6.70
e
2.286
2.386
E1
H
10.10
1.50
10.40
1.70
L
L1
L2
L3
L4
L6
Θ
1
Θ
2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DocID024772 Rev 3
15/21
21
Package information
STB6N60M2, STD6N60M2
Figure 24. DPAK (TO-252) footprint
(b)
)3ꢀꢀꢉꢊꢃꢃꢄꢋ5HYꢋꢄꢁ
b. All
dimensions are in millimeters
16/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Packing information
5
Packing information
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DocID024772 Rev 3
17/21
21
Packing information
STB6N60M2, STD6N60M2
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
18/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Packing information
Figure 25. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 26. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl
ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID024772 Rev 3
19/21
21
Revision history
STB6N60M2, STD6N60M2
6
Revision history
Table 13. Document revision history
Changes
Date
Revision
11-Jun-2013
1
First release.
– Minor text changes
– Modified: R
thj-case
value for D
2
PAK in table 3
09-Jul-2013
2
3
Updated title, features and description
.
30-May-2016
Minor text changes.
20/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
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L
Y
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DocID024772 Rev 3
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