STMicroelectronics-STB7NK80ZT4
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STB7NK80Z, STB7NK80Z-1
STP7NK80ZFP, STP7NK80Z
N-channel 800
V
,
1
.5
Ω
, 5.2 A, TO-220,TO-220F
P
,
D
2
P
A
K,I
2
P
A
K
Zener-protected SuperMESH™ Power MOSFET
Features
V
DSS
(@Tjmax)
Type
R
DS(on)
I
D
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
800V
800V
800V
800V
< 1.8
Ω
< 1.8
Ω
< 1.8
Ω
< 1.8
Ω
5.2A
5.2A
5.2A
5.2A
3
2
1
TO-220
TO-220FP
STB7NK80Z-1
■
Extremely high dv/dt capability
■
100% avalanche tested
3
3
2
1
1
■
Gate charge minimized
I
2
PAK
D
2
PAK
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
Figure 1.
Internal schematic diagram
Applications
D(2)
■
Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB7NK80ZT4
STB7NK80Z-1
STP7NK80Z
B7NK80Z
B7NK80Z
D²
P
A
K
I²
P
A
K
T
a
pe e reel
P7NK80Z
TO-220
TO-220FP
T
u
be
STP7NK80ZFP
P7NK80ZFP
March 2010
Doc ID 8979 Rev 6
1/17
17
Contents
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D
2
PAK I
2
PAK
TO-220
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate- source voltage
800
V
V
30
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
5.2
3.3
20.8
125
1
5.2
(1)
3.3
(1)
20.8
(1)
30
A
A
I
D
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25°C
Derating factor
W
0.24
W/°C
Gate source ESD
(HBM-C=100 p
F
,
R
=1.5 k
Ω)
V
ESD(G-S)
4000
4.5
V
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; T
C
= 25 °C)
V
ISO
2500
V
T
j
Max operating junction temperature
Storage temperature
°C
°C
-55 to 150
T
stg
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
5.2 A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
D
2
PAK I
2
PAK
TO-220
TO-220FP
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
1
4.2
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
T
l
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
I
AR
5.2
A
Single pulse avalanche energy
E
AS
210
mJ
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 8979 Rev 6
3/17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
I
D
=1 mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source
V
(BR)DSS
800
V
Breakdown voltage
Zero gate voltage
V
DS
= Max rating
1
µA
µA
I
DSS
Drain Current (V
GS
= 0)
V
DS
= Max rating, T
C
= 125 °C
50
Gate-body leakage
Current (V
DS
= 0)
I
GSS
V
GS
=
20 V
10
3.75 4.5
1.5 1.8
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 2.6 A
3
Static drain-source on
resistance
R
DS(on)
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
g
fs
Forward transconductance
V
DS
= 15
V
,
I
D
= 2.6 A
Input capacitance
–
5
S
C
iss
C
oss
C
rss
1138
122
25
pF
pF
pF
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Output capacitance
–
Reverse transfer
capacitance
C
o
(
s
2
s
)
eq.
Equivalent output
capacitance
V
DS
=0 , V
DS
= 0 to 640 V
–
–
50
pF
t
d(on)
t
r
t
r(off)
t
r
T
u
rn-on delay time
Rise time
20
12
45
20
ns
ns
ns
ns
V
DD
= 400
V
,
I
D
= 2.6 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
T
u
rn-off delay time
Fall time
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 640
V
,
I
D
= 5.2 A,
V
GS
= 10 V
40
7
56
nC
nC
nC
–
–
21
t
r(Voff)
Off-voltage rise time
Fall time
V
DD
= 640
V
,
I
D
= 5.2 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
12
10
20
ns
ns
ns
t
r
t
c
Cross-over time
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
4/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ. Max. Unit
I
SD
Source-drain current
5.2
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
20.8
(2)
V
SD
Forward on voltage
I
SD
= 5.2 A, V
GS
= 0
1.6
V
I
SD
= 5.2 A, di/dt = 100
A/µs
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
530
3.31
12.5
ns
µC
A
Q
rr
–
V
DD
= 50
V
,
T
j = 150°C
I
RRM
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. Pulse
width limited by safe operating area
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BV
GSO
Gate-source breakdown voltage
I
GS
=
1mA (open drain)
30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
Doc ID 8979 Rev 6
5/17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D PAK,
I PAK
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D PAK,
I PAK
2
2
2
2
Figure 4.
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Transfer characteristics
6/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Figure 8.
Transconductance
Figure 9.
Static drain-source on resistance
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Capacitance variations
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on resistance vs
vs temperature
temperature
Doc ID 8979 Rev 6
7/17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Figure 15.
Normalized BVDSS vs temperature
Figure 14.
Source-drain diode forward
characteristic
Figure 16.
Maximum avalanche energy vs
temperature
8/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 8979 Rev 6
9/17
Package mechanical data
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
Min.
mm
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 23.
TO-220FP drawing
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_K
Doc ID 8979 Rev 6
11/17
Package mechanical data
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
b
1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
2
8
.
9
0
3
.75
3
.
8
5
2.
9
5
2.65
0015988_Rev_S
12/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Package mechanical data
I²PAK (TO-262) mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.2
3
8
.95
2.40
4.95
10
4.60
2.72
0.
88
1.70
0.70
1.
3
2
9.
3
5
2.70
5.15
10.40
14
0.17
3
0.094
0.024
0.044
0.019
0.04
8
0.
3
52
0.094
0.194
0.
3
9
3
0.511
0.1
3
7
0.050
0.1
8
1
0.107
0.0
3
4
0.066
0.027
0.052
0.
3
6
8
0.106
0.202
0.410
0.551
0.154
0.055
b
1
c
c2
D
e
e1
E
L
1
3
L1
L2
3
.50
1.27
3
.9
3
1.40
Doc ID 8979 Rev 6
13/17
Package mechanical data
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
D2PAK (TO-ꢀ63) mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
0.1
8
1
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8
.95
7.50
10
4.60
0.2
3
0.9
3
1.70
0.60
1.
3
6
9.
3
5
0.17
3
0.001
0.027
0.045
0.017
0.04
8
0.
3
52
0.295
0.
3
94
0.
33
4
0.009
0.0
3
7
0.067
0.024
0.05
3
0.
3
6
8
b
2
c
c2
D
D1
E
10.40
0.409
E1
e
8
.50
2.54
0.1
e1
H
4.
88
15
5.2
8
15.
8
5
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.20
8
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.
3
0
L1
L2
R
0.051
0.4
0.016
V2
0°
8
°
0°
8
°
0079457_M
14/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
Doc ID 8979 Rev 6
15/17
Revision history
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
6
Revision history
Table 10.
Revision history
Date
Revision
Changes
09-Sep-2004
16-Aug-2006
09-Oct-2006
28-Mar-2010
3
4
5
6
Complete version
New template, no content change
Corrected order code
16/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
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Doc ID 8979 Rev 6
17/17
