STMicroelectronics-STB80NF55L-06T4

STB80NF55L-06  

STP80NF55L-06  

N-CHANNEL 55V – 0.005

Ω

– 80A D

²PAK/TO-220  

STripFET™ II POWER MOSFET  

V

DSS  

R

I

D

TYPE  

DS(on)  

STB80NF55L-06  

STP80NF55L-06  

55 V  

55 V  

< 0.0065

Ω  

< 0.0065

Ω  

80 A  

80 A  

■

■

■

■

TYPICAL R

 

(on) = 0.005

Ω  

DS  

LOW THRESHOLD DRIVE  

LOGIC LEVEL DEVICE  

3

2

SURFACE-MOUNTING D PAK (TO-263)  

POWER PACKAGE IN TUBE (NO SUFFIX) OR  

IN TAPE & REEL (SUFFIX “T4”)  

3

1

2

1

2

D PAK  

TO-263  

TO-220  

(Suffix “T4”)  

DESCRIPTION  

This Power MOSFET is the latest development of  

STMicroelectronis unique “Single Feature Size™”  

strip-based process. The resulting transistor  

shows extremely high packing density for low on-  

resistance, rugged avalanche characteristics and  

less critical alignment steps therefore a remark-  

able manufacturing reproducibility.  

INTERNAL SCHEMATIC DIAGRAM  

APPLICATIONS  

■

■

■

■

■

HIGH CURRENT, HIGH SPEED SWITCHING  

SOLENOID AND RELAY DRIVERS  

MOTOR CONTROL, AUDIO AMPLIFIERS  

DC-DC & DC-AC CONVERTERS  

AUTOMOTIVE  

ABSOLUTE MAXIMUM RATINGS  

Symbol  

Parameter  

Value  

55  

Unit  

V

V

Drain-source Voltage (V

 

= 0)  

DS  

GS  

V

Drain-gate Voltage (R

 

= 20 k

Ω

)  

55  

V

DGR  

GS  

V

Gate- source Voltage  

± 16  

80  

V

GS  

I (#)  

D

Drain Current (continuous) at T

 

= 25°C  

A

C

I

D

Drain Current (continuous) at T

 

= 100°C  

80  

A

C

I

(

•

)  

Drain Current (pulsed)  

320  

300  

2

A

DM  

P

T

o

tal Dissipation at T

 

= 25°C  

W

tot  

C

Derating Factor  

W/°C  

V/ns  

J

(1)  

(2)  

Peak Diode Recovery voltage slope  

Single Pulse Avalanche Energy  

Storage

T

e

mperature  

7

dv/dt  

E

1.3  

AS  

T

stg  

-55 to 175  

°C  

T

Operating Junction

T

e

mperature  

j

(#

)

Current limited by the package  

(1) I

 

≤

80A, di/dt

≤

400A/µs, V

 

≤

V  

, T

≤

T  

SD  

DD  

(BR)DSS j

 

JMAX  

o

(

•

)

Pulse width limited safe operating area  

(2) Starting T

 

= 25

 

C, I

 

= 40A, V

 

= 35V  

j

D

DD  

January 2003  

1/10  

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13

 

MARKING: P80NF55L-06 @

 

B80NF55L-06 @  

STB80NF55L-06 STP80NF55L-06  

THERMAL DATA  

Rthj-case  

Rthj-amb  

Thermal Resistance Junction-case  

Thermal Resistance Junction-ambient  

Maximum Lead

T

e

mperature For Soldering Purpose  

Max  

Max  

0.5  

62.5  

300  

°C/W  

°C/W  

°C  

T

l

ELECTRICAL CHARACTERISTICS

(T  

= 25 °C UNLESS OTHERWISE SPECIFIED)  

CASE  

OFF  

Symbol  

Parameter  

Drain-source  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

I

= 250 µA, V

 

= 0  

55  

V

V

D

GS  

(BR)DSS  

Breakdown Voltage  

V

= Max Rating  

= Max Rating

 

T =

 

125°C  

Zero Gate Voltage  

1

10  

µA  

µA  

I

I

DS  

DSS  

Drain Current (V

 

= 0)  

V

DS  

GS  

C

Gate-body Leakage  

V

GS  

= ± 16 V  

±100  

nA  

GSS  

Current (V

 

= 0)  

DS  

(*

)  

ON  

Symbol  

Parameter  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

V

GS(th)  

V

= V  

I

= 250 µA  

Gate Threshold Voltage  

1

V

DS  

GS  

D

V

V

= 10 V  

= 5 V  

I

I

= 40 A  

= 40 A  

Static Drain-source On  

Resistance  

0.005  

0.0055  

0.0065  

0.008  

Ω

Ω

R

GS  

D

D

DS(on)  

GS  

DYNAMIC  

Symbol  

Parameter  

Test Conditions  

= 15 V

 

= 40 A  

Min.  

Typ.  

Max.  

Unit  

(*)  

V

I

D

g

fs  

Forward Transconductance  

150  

S

DS  

V

DS  

= 25V

 

f = 1 MHz

 

V =

 

0  

GS  

C

Input Capacitance  

Output Capacitance  

Reverse Transfer  

Capacitance  

4850  

1040  

375  

pF  

pF  

pF  

iss  

C

oss  

C

rss  

2/10  

STB80NF55L-06 STP80NF55L-06  

ELECTRICAL CHARACTERISTICS

(continued)  

SWITCHING ON  

Symbol  

Parameter  

Test Conditions  

= 27 V  

Min.  

Typ.  

Max.  

Unit  

V

R

I

= 40 A  

= 4.5 V  

GS  

Turn-on Delay Time  

Rise Time  

32  

180  

ns  

ns  

t

DD  

D

d(on)  

= 4.7

Ω  

V

t

r

G

(Resistive Load, Figure 3)  

Q

V

= 44V I

 

= 80A V

 

= 5V  

D GS  

T

o

tal Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

100  

18  

53  

136  

nC  

nC  

nC  

g

DD  

Q

gs  

Q

gd  

SWITCHING OFF  

Symbol  

Parameter  

Test Conditions  

= 27 V  

Min.  

Min.  

Typ.  

Max.  

Unit  

V

R

I

= 40 A  

= 4.5 V  

Turn-off Delay Time  

Fall Time  

135  

80  

ns  

ns  

t

DD  

D

d(off)  

= 4.7

Ω,  

V

GS  

t

G

f

(Resistive Load, Figure 3)  

SOURCE DRAIN DIODE  

Symbol  

Parameter  

Test Conditions  

Typ.  

Max.  

Unit  

I

Source-drain Current  

Source-drain Current (pulsed)  

80  

320  

A

A

SD  

( )  

•

I

SDM  

(*)  

I

I

= 80 A  

V

= 0  

GS  

V

Forward On Voltage  

1.5  

V

SD  

SD  

SD  

t

= 80 A  

= 25 V  

di/dt = 100A/µs  

T =

 

150°C  

Reverse Recovery Time  

Reverse Recovery Charge  

Reverse Recovery Current  

100  

310  

6.2  

ns  

nC  

A

rr  

Q

V

rr  

DD  

j

I

(see test circuit, Figure 5)  

RRM  

(*)  

(

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  

•

)

Pulse width limited by safe operating area.  

Safe Operating Area  

Thermal Impedance  

3/10  

STB80NF55L-06 STP80NF55L-06  

Output Characteristics  

Transfer Characteristics  

Transconductance  

Static Drain-source On Resistance  

Gate Charge vs Gate-source Voltage  

Capacitance Variations  

4/10  

STB80NF55L-06 STP80NF55L-06  

Normalized Gate Threshold Voltage vs Temperature  

Normalized on Resistance vs Temperature  

Source-drain Diode Forward Characteristics  

Normalized Breakdown Voltage vs Temperature.  

.

.

5/10  

STB80NF55L-06 STP80NF55L-06  

Fig. 1:

Unclamped Inductive Load Test Circuit  

Fig. 2:

Unclamped Inductive Waveform  

Fig. 3:

Switching Times Test Circuits For Resistive  

Fig. 4:

Gate Charge test Circuit  

Load  

Fig. 5:

Test Circuit For Inductive Load Switching  

And Diode Recovery Times  

6/10  

STB80NF55L-06 STP80NF55L-06  

2

D

P

A

K

 

MECHANICAL DATA  

mm.  

inch.  

TY

P

.  

DIM.  

MIN.  

4.4  

TY

P

.  

MAX.  

4.6  

MIN.  

0.173  

0.098  

0.001  

0.028  

0.045  

0.018  

0.048  

0.352  

TY

P

.  

0.181  

0.106  

0.009  

0.037  

0.067  

0.024  

0.054  

0.368  

A

A1  

A2  

B

2.49  

0.03  

0.7  

2.69  

0.23  

0.93  

1.7  

B2  

C

1.14  

0.45  

1.21  

8.95  

0.6  

C2  

D

1.36  

9.35  

D1  

E

8

0.315  

0.334  

10  

10.4  

0.394  

0.409  

E1  

G

8.5  

4.88  

15  

5.28  

15.85  

1.4  

0.192  

0.591  

0.050  

0.055  

0.094  

0.208  

0.624  

0.055  

0.069  

0.126  

L

L2  

L3  

M

1.27  

1.4  

1.75  

3.2  

2.4  

R

0.4  

0.015  

V2  

0°  

8°  

0°  

8°  

7/10  

STB80NF55L-06 STP80NF55L-06  

TO-220 MECHANICAL DATA  

mm.  

TY

P

.  

inch.  

TY

P

.  

DIM.  

MIN.  

4.4  

MAX.  

4.6  

MIN.  

0.173  

0.048  

0.094  

0.019  

0.024  

0.044  

0.044  

0.194  

0.094  

0.393  

TY

P

.  

0.181  

0.051  

0.107  

0.027  

0.034  

0.067  

0.067  

0.203  

0.106  

0.409  

A

C

1.23  

2.40  

0.49  

0.61  

1.14  

1.14  

4.95  

2.40  

10  

1.32  

2.72  

0.70  

0.88  

1.70  

1.70  

5.15  

2.70  

10.40  

D

E

F

F1  

F2  

G

G1  

H2  

L2  

L3  

L4  

L5  

L6  

L7  

L9  

DIA  

16.40  

28.90  

0.645  

1.137  

13  

14  

0.511  

0.104  

0.600  

0.244  

0.137  

0.147  

0.551  

0.116  

0.620  

0.260  

0.154  

0.151  

2.65  

15.25  

6.20  

3.50  

3.75  

2.95  

15.75  

6.60  

3.93  

3.85  

8/10  

STB80NF55L-06 STP80NF55L-06  

D

2

PAK FOOTPRINT  

TUBE SHIPMENT (no suffix)*  

T

A

PE AND REEL SHIPMENT (suffix ”T4”)*  

REEL MECHANICAL DATA  

mm  

inch  

MAX.  

DIM.  

M

I

N.  

MAX.  

MIN.  

A

B

C

D

G

N

T

330  

12.992  

0.520  

1.039  

1.197  

1.5  

12.8  

20.2  

24.4  

100  

0.059  

0.504  

0.795  

0.960  

3.937  

13.2  

26.4  

30.4  

BASE QTY  

BULK QTY  

1000  

1000  

TAPE MECHANICAL DATA  

mm  

inch  

DIM.  

MIN.  

10.5  

15.7  

1.5  

MAX.  

10.7  

15.9  

1.6  

MIN.  

0.413  

0.618  

0.059  

0.062  

0.065  

0.449  

0.189  

0.153  

0.468  

0075  

MAX.  

0.421  

0.626  

0.063  

0.063  

0.073  

0.456  

0.197  

0.161  

0.476  

0.082  

A0  

B0  

D

D1  

E

1.59  

1.65  

1

1

.4  

4.8  

1.61  

1.85  

11.6  

5.0  

F

K0  

P0  

P1  

P2  

R

3.9  

4.1  

1

1

.9  

1.9  

12.1  

2.1  

50  

1.574  

T

0.25  

23.7  

0.35  

24.3  

.0.0098 0.0137  

0.933 0.956  

W

* on sales type  

9/10  

STB80NF55L-06 STP80NF55L-06  

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  

The ST logo is registered trademark of STMicroelectronics  

2002 STMicroelectronics – All Rights Reserved  

All other names are the property of their respective owners.  

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10/10