STMicroelectronics-STD10NM60N
| Part # | STMicroelectronics-STD10NM60N |
Download  | STMicroelectronics-STD10NM60N |
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600
V
,
0
.53
Ω
typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220F
P
,
T
O-220 and IPAK
packages
Datasheet
–
production data
Features
7$%
V
DS
@T
J
R
DS(on)
Order code
I
D
P
TOT
max.
max.
ꢀ
ꢀ
ꢂ
ꢁ
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
70 W
25 W
ꢂ
DPAK
TO-220FP
650 V
0.55
Ω
10 A
7$%
70 W
7$%
•
100% avalanche tested
ꢀ
ꢀ
ꢁ
ꢁ
ꢂ
•
Low input capacitance and gate charge
•
Low gate input resistance
ꢂ
IPAK
TO-220
Figure 1. Internal schematic diagram
Applications
•
Switching applications
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Description
These devices are N-channel Power MOSFE
T
s
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Table 1. Device summary
Order code
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
T
a
pe and reel
Tube
Tube
Tube
December 2015
DocID028726 Rev 1
1/28
This is information on a product in full production.
Contents
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
2/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220 TO-220FP IPAK DPAK
V
GS
I
D
Gate- source voltage
± 25
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
10
5
10
(1)
5
(1)
32
(1)
25
10
5
I
D
A
(2)
I
DM
32
70
32
70
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
dv/dt
(3)
Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t =1 s; T
C
= 25 °C)
V
ISO
2500
V
T
J
Operating junction temperature
Storage temperature
– 55 to 150
°C
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤
10 A, di/dt
≤
400 A/µs, V
peak
≤
V
, V
= 80% V
.
SD
DS
(BR)DSS
DD
(BR)DSS
Table 3. Thermal data
Parameter
Value
Symbol
Unit
TO-220 TO-220FP IPAK DPAK
R
thj-case
Thermal resistance junction-case max.
R
thj-amb
Thermal resistance junction-ambient max.
R
thj-pcb
Thermal resistance junction-pcb max.
1.79 1.79
5
°C/W
°C/W
°C/W
62.50
100
50
Table 4. Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max.)
I
AS
4
A
Single pulse avalanche energy
E
AS
200
mJ
(starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
DocID028726 Rev 1
3/28
28
Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2
Electrical characteristics
(
T
case
= 25 °C unless otherwise specified)
Table 5. On/off-states
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
I
D
= 1 mA, V
GS
= 0
600
Drain-source
breakdown voltage
V
(BR)DSS
V
I
D
= 1 mA, V
GS
= 0,
T
C
= 150 °C
650
V
DS
= 600 V
1
Zero-gate voltage
I
DSS
µA
100
drain current (V
GS
= 0)
V
DS
= 600 V, T
C
= 125 °C
V
GS
= ± 25 V
Gate-body leakage
current (V
DS
= 0)
I
GSS
± 100
nA
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
Static drain-source on-
V
GS
= 10
V
,
I
D
= 4 A
resistance
0.53
0.55
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
C
iss
Input capacitance
–
–
540
44
–
–
pF
pF
V
V
DS
= 50
V
, f = 1 MHz,
GS
= 0
C
oss
Output capacitance
Reverse transfer
capacitance
C
rss
–
–
1.2
–
–
pF
pF
Equivalent
capacitance time
related
(1)
C
oss eq
V
DS
= 0 to 480 V, V
GS
= 0
110
R
g
Q
g
Gate input resistance
f=1 MHz open drain
T
o
tal gate charge
–
–
–
–
6
19
3
–
–
–
–
Ω
nC
nC
nC
V
DD
= 480
V
,
I
D
= 8 A,
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
V
GS
= 10 V
10
1.
C
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
oss
when V
increases from 0 to 80% V
.
DSS
DS
4/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Switching times
Symbol
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
10
12
32
15
–
–
–
–
ns
ns
ns
ns
V
DD
= 300 V, I
D
= 4 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
Turn-off-delay time
Fall time
Table 8. Source-drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
I
SD
Source-drain current
–
8
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
32
1.3
(2)
V
SD
I
SD
= 8 A, V
GS
= 0
SD
= 8 A, di/dt = 100 A/µs
–
–
–
V
ns
µC
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
250
2.12
17
I
V
DD
= 60 V
I
RRM
t
rr
–
315
2.6
ns
µC
A
I
SD
= 8 A, di/dt = 100 A/µs
Q
rr
V
DD
= 60 V T
J
= 150 °C
I
RRM
16.5
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
DocID028726 Rev 1
5/28
28
Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220
Figure 3. Thermal impedance for TO-220
Figure 5. Thermal impedance for TO-220FP
Figure 7. Thermal impedance for DPAK, IPAK
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6/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
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Figure 10.
Normalized V
DS
vs. temperature
Figure 11. Static drain-source on-resistance
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Figure 12. Gate charge vs. gate-source voltage
Figure 13. Capacitance variations
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DocID028726 Rev 1
7/28
28
Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 14.
Normalized gate threshold voltage
vs. temperature
Figure 15. Normalized on-resistance vs.
temperature
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8/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
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Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
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Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
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RQ
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RII
WG
RII
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DocID028726 Rev 1
9/28
28
Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
4.1
STD10NM60N, DPAK (TO-252) package information
Figure 22. DPAK (TO-252) type A package outline
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10/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
Table 9. DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.16
4.40
9.35
1.00
2.60
0.65
0.60
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.40
4.60
10.10
1.50
3.00
0.95
1.00
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.28
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DocID028726 Rev 1
11/28
28
Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 23. DPAK (TO-252) type C2 outline
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12/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
Table 10. DPAK (TO-252) type C2 package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.10
6.50
5.20
2.186
9.80
1.40
2.30
1.01
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
5.60
6.70
5.50
2.386
10.40
1.70
b4
c
5.33
c2
D
6.10
6.60
D1
E
E1
e
2.286
10.10
H
L
1.50
(L1)
L2
L3
L4
L6
Ɵ
1
Ɵ
2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DocID028726 Rev 1
13/28
28
Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 24. DPAK (TO-252) type E package outline
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14/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
Table 11. DPAK (TO-252) type E mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A2
b
2.18
2.39
0.13
0.884
5.46
0.61
0.60
6.22
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
b4
c
c2
D
D1
E
6.73
E1
e
2.286
4.572
e1
H
9.94
1.50
10.34
1.78
L
L1
L2
L4
2.74
0.89
1.27
1.02
DocID028726 Rev 1
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28
Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 25. DPAK (TO-252) type A, C2, E recommended footprint
(a)
a. All
dimensions are in millimeters
16/28
DocID028726 Rev 1
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
4.2
STF10NM60N, TO-220FP package information
Figure 26. TO-220FP package outline
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Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 12. TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
4.3
STP10NM60N, TO-220 package information
Figure 27. TO-220 type A package outline
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Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 13. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
4.4
STU10NM60N, IPAK (TO-251)
Figure 28. IPAK (TO-251) type A outline
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Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 14. IPAK (TO-251) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
Figure 29. IPAK (TO-251) type C package outline
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Package information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 15. IPAK (TO-251) type C package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
2.20
0.90
0.66
2.30
1.00
2.35
1.10
0.79
0.90
5.43
0.59
0.59
6.20
5.55
6.70
4.95
2.30
4.60
16.78
9.60
1.20
1.25
7°
b2
b4
c
5.23
0.46
0.46
6.00
5.20
6.50
4.60
2.20
4.40
16.18
9.00
0.90
0.90
3°
5.33
c2
D
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
D1
E
E1
e
e1
H
L
L1
L2
Ɵ
1
Ɵ
2
1°
3°
5°
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Packing information
5
Packing information
Figure 30. Tape for DPAK (TO-252)
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Packing information
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 31. Reel for DPAK (TO-252)
7
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Table 16. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
13.2
18.4
22.4
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base quantity
Bulk quantity
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Revision history
6
Revision history
Table 17. Document revision history
Changes
Date
Revision
First release. Part numbers previously included in the datasheet with
DocID15764.
04-Dec-2015
1
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
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