STMicroelectronics-STD110N8F6
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STD110N8F6
N-channel 80
V
,
0
.0056
Ω
typ.,80 A, STripFET™ F6
Power MOSFET in a DPAK package
Datasheet
–
production data
Features
Order code
V
DS
R
DS(on)max
0.0065
Ω
I
D
P
TOT
7$%
STD110N8F6 80
V
80 A
167 W
ꢊ
ꢆ
•
Very low on-resistance
•
Very low gate charge
ꢁ
•
High avalanche ruggedness
•
Low gate drive power loss
‘3$.
Applications
Figure 1. Internal schematic diagram
•
Switching applications
Description
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This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
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Table 1. Device summary
Order code
Marking
110N8F6
Package
Packing
STD110N8F6
DPAK
Tube
December 2014
DocID027274 Rev 1
1/16
This is information on a product in full production.
Contents
STD110N8F6
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
DocID027274 Rev 1
STD110N8F6
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage
80
±20
80
V
V
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
72
A
(1)
I
DM
320
167
180
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Single pulse avalanche energy
Operating junction temperature
Storage temperature
W
mJ
°C
(2)
E
AS
T
J
-55 to 175
T
stg
°C
1. Pulse
width is limited by safe operating area
2. Starting
T =
25 °C, I
= 55 A, V
= 60 V
J
D
DD
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
0.9
50
°C/W
°C/W
(1)
R
thj-pcb
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
DocID027274 Rev 1
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16
Electrical characteristics
STD110N8F6
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On/off-state
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
V
GS
= 0, I
D
= 1 mA
80
V
breakdown voltage
V
GS
= 0, V
DS
= 80 V
GS
= 0, V
DS
= 80 V,
1
µA
µA
Zero-gate voltage
drain current
I
DSS
V
100
T
C
= 125 °C
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= +20 V
100
4.5
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source
2.5
V
GS
= 10
V
,
I
D
= 40 A
0.0056 0.0065
Ω
on- resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Output capacitance
Min.
Typ.
9130
320
Max. Unit
C
iss
–
–
–
–
pF
pF
V
DS
= 40
V
, f = 1 MHz,
GS
= 0
C
oss
V
Reverse transfer
capacitance
C
rss
–
225
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
150
40
–
–
–
nC
nC
nC
V
DD
= 40 V, I
D
= 80 A,
GS
= 10 V
V
30
Table 6. Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
24
61
–
–
–
–
ns
ns
ns
ns
V
DD
= 40 V, I
D
= 55 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
Turn-off delay time
Fall time
162
48
4/16
DocID027274 Rev 1
STD110N8F6
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Source-drain diode
Test conditions
Symbol
Parameter
(1)
V
SD
Forward on voltage
I
SD
= 80 A, V
GS
= 0
–
–
–
–
1.2
V
ns
nC
A
t
rr
Reverse recovery time
30
34
I
SD
= 80 A, di/dt = 100 A/µs
Q
rr
Reverse recovery charge
Reverse recovery current
V
I
RRM
2.3
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID027274 Rev 1
5/16
16
Electrical characteristics
STD110N8F6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
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Figure 5. Transfer characteristics
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Figure 6. Gate charge vs gate-source
Figure 7. Static drain-source on-resistance
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6/16
DocID027274 Rev 1
STD110N8F6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
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Figure 10. Normalized on-resistance
Figure 11. Normalized V
(BR)DSS
vs temperature
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characteristics
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DocID027274 Rev 1
7/16
16
Test circuits
STD110N8F6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
8/16
DocID027274 Rev 1
STD110N8F6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID027274 Rev 1
9/16
16
Package information
STD110N8F6
Figure 19. DPAK (TO-252) type A drawing
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10/16
DocID027274 Rev 1
STD110N8F6
Package information
Table 8. DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1.00
4.60
10.10
1.50
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1.00
8°
0.20
V2
DocID027274 Rev 1
11/16
16
Package information
STD110N8F6
Figure 20. DPAK (TO-252) footprint
(a)
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a. All
dimensions are in millimeters
12/16
DocID027274 Rev 1
STD110N8F6
Packing information
5
Packing information
Figure 21. Tape for DPAK (TO-252)
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DocID027274 Rev 1
13/16
16
Packing information
STD110N8F6
Figure 22. Reel for DPAK (TO-252)
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Table 9. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
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1.5
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18.4
22.4
1.5
1.5
D1
E
1.65
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1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
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8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
14/16
DocID027274 Rev 1
STD110N8F6
Revision history
6
Revision history
Table 10. Document revision history
Changes
Date
Revision
15-Dec-2014
1
First release.
DocID027274 Rev 1
15/16
16
STD110N8F6
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
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.
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