STMicroelectronics-STD16N60M2
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STD16N60M2
Datasheet
N-channel 600
V
,
0
.280 Ω typ., 12 A MDmesh M2
Power MOSFET in a DPAK package
Features
V
R
max.
I
D
Order code
DS
DS(on)
TAB
STD16N60M2
600 V
0.320 Ω
12 A
3
2
1
•
•
•
•
Extremely low gate charge
DPAK
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
D(2, TAB)
Zener-protected
Applications
G(1)
•
Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
AM15572v1_tab
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
Product status
Product summary
Order code
Marking
STD16N60M2
16N60M2
Package
Packing
DPAK
T
a
pe and reel
DS10725
–
Rev 3
–
May 2019
For further information contact your local STMicroelectronics sales office.
STD16N60M2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
Unit
V
V
Gate-source voltage
GS
I
Drain current (continuous) at T
= 25 °C
12
A
D
C
I
Drain current (continuous) at T
= 100 °C
7.6
A
D
C
I
Drain current (pulsed)
48
A
DM
P
TOT
T
o
tal power dissipation at T
= 25 °C
110
W
C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
15
V/ns
V/ns
50
T
Storage temperature range
-55 to 150
-55 to 150
stg
°C
T
Operating junction temperature range
j
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 12 A, di/dt ≤ 400 A/µs; V
< V
, V
= 400 V.
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value Unit
R
Thermal resistance junction-case
Thermal resistance junction-pcb
1.14 °C/W
thj-case
R
thj-pcb
50
°C/W
1. When
mounted on FR-4 board of 1 inch², 2 oz Cu
Table 3.
Avalanche characteristics
Symbol
Parameter
Value Unit
I
Avalanche current, repetitive or not repetitive (pulse width limited by T
)
jmax
2.9
A
AR
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
j D
AR DD
130
mJ
AS
DS10725
–
Rev 3
page 2/19
STD16N60M2
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
600
Typ. Max. Unit
V
V
GS
V
GS
V
GS
V
DS
V
DS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
V
(BR)DSS
D
= 0
V
, V
=
6
00 V
1
µA
µA
µA
V
DS
I
Zero gate voltage Drain current
DSS
100
±10
4
DS
C
I
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
GSS
GS
V
= V
, I
= 250 µA
2
3
GS(th)
DS(on)
GS
D
R
= 10
V
, I
= 6 A
D
Static drain-source on-resistance
0.280 0.320
Ω
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
–
–
–
–
–
700
38
–
–
–
–
–
–
–
–
pF
pF
pF
pF
Ω
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
1.2
140
5.3
19
rss
= 0 V to 480
V
, V
= 0 V
C
oss eq.
DS
GS
R
G
f = 1 MHz open drain
Q
nC
nC
nC
g
V
= 480
V
, I
=
1
2 A, V
= 0 to 10 V
DD
D
GS
Q
gs
Gate-source charge
3.3
9.5
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
10.5
9.5
–
–
–
–
ns
ns
ns
ns
d(on)
V
V
= 300
V
, I
= 6 A R
=
4
.7 Ω,
D G
DD
t
r
GS
t
Turn-off delay time
Fall time
58
d(off)
t
18.5
f
DS10725
–
Rev 3
page 3/19
STD16N60M2
Electrical characteristics
Table 7.
Source drain diode
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
I
Source-drain current
–
–
12
48
A
A
SD
Source-drain current
(pulsed)
I
SDM
V
V
I
= 0
V
, I
=
1
2 A
SD
Forward on voltage
–
–
1.6
V
GS
SD
t
Reverse recovery time
316
ns
rr
= 12 A, di/dt = 100 A/µs, V
= 60 V (see
Reverse recovery
charge
SD
DD
Q
rr
–
3.25
µC
Reverse recovery
current
I
–
–
–
20.5
454
4.8
A
RRM
t
Reverse recovery time
ns
µC
rr
I
= 12 A, di/dt = 100 A/µs, V
= 60
V
, T
=
1
50 °C (see
DD j
Reverse recovery
charge
SD
Q
rr
Reverse recovery
current
I
–
21
A
RRM
1. Pulse
width is limited by safe operating area
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%
DS10725
–
Rev 3
page 4/19
STD16N60M2
STD16N60M2 Electrical characteristics curves
2.1
Characteristics curves
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
I
D
(A)
GIPG090320151717ALS
GC20460
K
10 μs
10
1
10
0
100 μs
10
0
1 ms
10
-1
10
-2
T
≤
150
°C
T
c
j
= 25 °C
10 ms
single
pulse
10
2
10
-1
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
(V)
t
p
(s)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
I
D
(A)
GIPG100320150819ALS
GIPG100320150904ALS
I
D
(A)
V
DS
= 17 V
V
GS
= 7, 8, 9, 10 V
25
20
15
10
25
20
15
10
V
GS
= 6 V
V
GS
= 5 V
5
0
5
0
V
GS
= 4 V
0
4
8
12
16
V
DS
(V)
0
2
4
6
8
V
GS
(V)
DS10725
–
Rev 3
page 5/19
STD16N60M2
STD16N60M2 Electrical characteristics curves
Figure 5.
Normalized gate threshold voltage vs.
temperature
Figure 6.
Normalized V
(BR)DSS
vs. temperature
GIPG100320151032ALS
V
(BR)DSS
(norm.)
GIPG100320151014ALS
V
GS(th)
(norm.)
1.08
1.1
I
D
= 1 mA
I
D
= 250 μA
1.0
1.04
1.00
0.96
0.9
0.8
0.7
0.6
0.92
0.88
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 7.
Static drain-source on-resistance
R
DS(on)
Figure 8.
Normalized on-resistance vs. temperature
GIPG100320151105ALS
GIPG100320151114ALS
R
DS(on)
(Ω)
(norm.)
2.2
0.295
1.8
0.290
0.285
0.280
V
GS
= 10 V
V
GS
= 10 V
1.4
1.0
0.6
0.2
0.275
0.270
0
2
4
6
8
10
12
I
D
(A)
-75
-25
25
75
125
T
J
(°C)
Figure 9.
Gate charge vs. gate-source voltage
Figure 10.
Capacitance variations
V
GS
(V)
V
DS
(V)
600
GIPG100320151120ALS
GIPG100320151141ALS
C
(pF)
12
10
8
10
3
10
2
10
1
500
400
300
200
100
C
ISS
V
DS
V
DD
= 480 V
I
D
= 12 A
C
OSS
6
4
f = 1 MHz
10
0
C
RSS
2
0
10
-1
0
10
-1
10
0
10
1
10
2
0
5
10
15
20
V
DS
(V)
Qg (nC)
DS10725
–
Rev 3
page 6/19
STD16N60M2
STD16N60M2 Electrical characteristics curves
Figure 11.
Output capacitance stored energy
Figure 12.
Source- drain diode forward characteristics
V
SD
(V)
GIPG100320151155ALS
GIPG100320151205ALS
E
(μJ)
1.1
1.0
0.9
0.8
0.7
0.6
T
J
= – 50 °C
5
4
3
2
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
0.4
0
100 200 300 400 500 600
V
DS
(V)
0
2
4
6
8
10
12 I
SD
(A)
DS10725
–
Rev 3
page 7/19
STD16N60M2
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS10725
–
Rev 3
page 8/19
STD16N60M2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
DS10725
–
Rev 3
page 9/19
STD16N60M2
DPAK (TO-252) type A2 package information
4.1
DPAK (TO-252) type A2 package information
Figure 19.
DPAK (TO-252) type A2 package outline
0068772_type-A2_rev26
DS10725
–
Rev 3
page 10/19
STD16N60M2
DPAK (TO-252) type A2 package information
Table 8.
DPAK (TO-252) type A2 mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
5.10
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
5.30
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
5.20
2.286
4.572
e1
H
L
L1
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS10725
–
Rev 3
page 11/19
STD16N60M2
DPAK (TO-252) type C2 package information
4.2
DPAK (TO-252) type C2 package information
Figure 20.
DPAK (TO-252) type C2 package outline
0068772_type-C2_rev26
DS10725
–
Rev 3
page 12/19
STD16N60M2
DPAK (TO-252) type C2 package information
Table 9.
DPAK (TO-252) type C2 mechanical data
mm
Typ.
2.30
1.01
Dim.
Min.
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.10
6.50
5.20
2.186
9.80
1.40
Max.
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
5.60
6.70
5.50
2.386
10.40
1.70
A
A1
A2
b
b4
c
5.33
c2
D
6.10
6.60
D1
E
E1
e
2.286
10.10
H
L
1.50
L1
L2
L3
L4
L6
θ1
θ2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DS10725
–
Rev 3
page 13/19
STD16N60M2
DPAK (TO-252) type C2 package information
Figure 21.
DPAK (TO-252) recommended footprint (dimensions are in mm)
DS10725
–
Rev 3
page 14/19
STD16N60M2
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 22.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS10725
–
Rev 3
page 15/19
STD16N60M2
DPAK (TO-252) packing information
Figure 23.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS10725
–
Rev 3
page 16/19
STD16N60M2
Revision history
Table 11.
Document revision history
Changes
Date
Revision
26-Nov-2014
1
First release.
T
e
xt edits throughout document
On cover page: updated cover page title description, updated features table.
In Section 1, Electrical ratings: updated “Avalanche characteristics” table
In Section 2, Electrical characteristics: renamed “On/off states” table to “Static” and updated table
24-Mar-2015
02-May-2019
2
3
In Section 2, Electrical characteristics: updated tables “Dynamic”, “Switching times” and “Source-
drain diode”
Added Section 2.1, Electrical characteristics (curves)
Updated 4.1, DPAK (TO-252) type A package information
Minor text changed.
DS10725
–
Rev 3
page 17/19
STD16N60M2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Characteristics curves
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
DPAK (TO-252) type A2 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
DPAK (TO-252) type C2 package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
14
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
DS10725
–
Rev 3
page 18/19
STD16N60M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS10725
–
Rev 3
page 19/19
