STMicroelectronics-STD16NF06T4
| Part # | STMicroelectronics-STD16NF06T4 |
Download  | STMicroelectronics-STD16NF06T4 |
STD16NF06
N-Channel 60V – 0.060
Ω
– 16A – DPAK
STripFET™ II Power MOSFET
General features
V
DSS
R
DS(on)
I
D
16A
Type
STD16NF06
60V
<0.070
Ω
3
■
Typical R
DS(on)
= 0.060
Ω
1
DPAK
TO-252
■
Exceptional dv/dt Capability
■
100% Avalanche Tested
■
Application Oriented Characterization
Description
Internal schematic diagram
This Power MOSFET is the latest development of
STMicroelectronis unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility
Applications
■
Audio Amplifiers
■
Power Tools
■
Automotive Environment
Order codes
Part Number
Marking
Package
Packaging
STD16NF06T4
D16NF06
TO-252
TAPE & REEL
Rev 1
1/11
January 2006
11
1 Electrical ratings
STD16NF06
1
Electrical ratings
T
a
ble 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
DGR
V
GS
Drain-source Voltage (V
GS
= 0V)
60
60
V
V
Drain-gate Voltage (R
GS
= 20 k
Ω
)
Gate-Source Voltage
± 20
16
V
I
D
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
A
I
D
11
A
I
DM
Note 4
Drain Current (pulsed)
64
A
P
TOT
T
o
tal Dissipation at T
C
= 25°C
Derating Factor
40
W
0.27
10.5
178
W/°C
V/ns
mJ
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
dv/dt
EAS
T
J
Operating Junction
T
e
mperature
Storage
T
e
mperature
-55 to 175
°C
T
stg
T
a
ble 2.
Thermal data
R
thJC
Thermal Resistance Junction-case Max
3.75
100
°C/W
°C/W
R
thJA
T
l
Thermal Resistance Junction-amb Max
Maximum Lead
T
e
mperature For Soldering
Purpose
275
°C
2/11
STD16NF06
2 Electrical characteristics
2
Electrical characteristics
( T
CASE
= 25 °C unless otherwise specified )
T
a
ble 3.
Symbol
On/off states
Parameter
Test Conditions
D
= 250
µ
A V
GS
= 0
V
DS
= Max Rating
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
Voltage
V
(BR)DSS
I
60
V
1
µA
µA
Zero Gate Voltage Drain
Current (V
GS
= 0)
I
DSS
V
DS
= Max Rating
T
C
=125°C
10
Gate Body Leakage Current
(V
DS
= 0)
I
GSS
V
GS
= ±20V
±
100
µA
V
GS(th)
R
DS(on)
V
DS
= V
GS
V
GS
= 10V
I
D
= 250µA
I
D
= 8A
Gate Threshold Voltage
2
V
Static Drain-Source On
Resistance
0.060
0.070
Ω
T
a
ble 4.
Symbol
Dynamic
Parameter
T
e
st Conditions
Min.
Typ.
Max.
Unit
g
fs
Note 5
V
DS
= 25V
I
D
= 8A
Forward Transconductance
6
S
C
iss
C
oss
C
rss
Input Capacitance
400
103
41.5
pF
pF
pF
V
DS
= 15V, f = 1MHz, V
GS
= 0
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
V
DD
=30
I
D
= 16A
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
14.1
2.8
nC
nC
nC
V
GS
=10V
5.4
T
a
ble 5.
Symbol
Switching times
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 30V,
I
D
= 8A,
R
G
= 4.7
Ω,
V
GS
= 10V
4
ns
ns
t
d(on)
t
r
Turn-on Delay Time
Rise Time
15
V
DD
= 30V,
I
D
= 8A,
16
ns
ns
t
d(off)
t
f
Off voltage Rise Time
FallTime
R
G
= 4.7
Ω,
V
GS
= 10V
5.5
3/11
2 Electrical characteristics
STD16NF06
T
a
ble 6.
Source drain diode
Symbol
Parameter
T
e
st Conditions
Min.
T
y
p.
Max.
Unit
I
SD
Source-drain Current
16
64
A
A
V
SD
Note 5
I
SD
= 8A
V
GS
= 0
Forward on Voltage
1.5
V
t
rr
I
SD
= 16A, di/dt = 100A/µs,
DD
= 20V, T
J
=150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
49
78
ns
µ
C
A
Q
rr
V
3.2
I
RRM
Note: 1 Value
limited by wire bonding
2 Garanted
when external Rg=4.7
Ω
and t
f
< t
fmax
.
3 Starting
T
J
= 25°C, I
D
= 19A, V
DD
= 18V
4 Pulse
width limited by safe operating area
5 Pulsed:
pulse duration = 300µs, duty cycle 1.5%
4/11
STD16NF06
2 Electrical characteristics
2.1
Electrical chraracteristics (curves)
Figure 1.
Safe Operating Area
Figure 2.
Thermal Impedance
Figure 3.
Output Characteristics
Figure 4.
Transfer Characteristics
Figure 5.
Transconductance
Figure 6.
Static Drain-Source on Resistance
5/11
2 Electrical characteristics
STD16NF06
Figure 7.
Gate Charge vs Gate-Source Voltage Figure 8.
Capacitance Variations
Figure 9.
Normalized Gate Threshold Voltage
Figure 10.
Normalized on Resistance vs
vs
T
e
mperature
T
e
mperature
Figure 11.
Source-drain Diode Forward
Characteristics
Figure 12.
Normalized Breakdown Voltage vs
T
e
mperature
6/11
STD16NF06
3
T
e
st circuits
3
Test circuits
Figure 13.
Switching Times Test Circuit For
Resistive Load
Figure 14.
Gate Charge Test Circuit
Figure 15.
Test Circuit For Inductive Load
Switching and Diode Recovery
Times
Figure 17.
Unclamped Inductive Load Test
Circuit
Figure 16.
Unclamped Inductive Waveform
7/11
4 Package mechanical data
STD16NF06
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
8/11
STD16NF06
4 Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
TYP.
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL “A”
D
L2
DETAIL “A”
L4
0068772-B
9/11
5 Revision History
STD16NF06
5
Revision History
Date
Revision
Description of changes
10-Jan-2006
1
First release
10/11
STD16NF06
5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2006 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
11/11
