STMicroelectronics-STD1NK60-1
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STD1NK60-1
N-
channel 600 V, 7.3 Ω typ., 1 A SuperMESH™
Power MOSFET in an IPAK package
Datasheet – production data
Features
P
TOT
Order code
V
DS
R
DS(on)
max.
I
D
TAB
30 W
STD1NK60-1
600 V
8.5 Ω
1 A
Extremely high dv/dt capability
ESD improved capability
100% avalanche tested
Gate charge minimized
3
2
1
IPAK
Applications
Low power battery chargers
Swith mode low power supplies (SMPS)
Low power, ballast, CFL (compact
fluorescent lamps)
Figure 1: Internal schematic diagram
D(2, TAB)
Description
This high voltage device is an N-channel Power
MOSFET developed using the SuperMESH™
technology by STMicroelectronics, an
G(1)
optimization of the well-established
PowerMESH™. In addition to a significant
reduction in on-resistance, this device is
designed to ensure a high level of dv/dt capability
for the most demanding applications.
S(3)
AM01475v1_noZen
Table 1: Device summary
Order code
Marking
Package
Packing
STD1NK60-1
D1NK60
IPAK
Tube
February 2017
DocID030308 Rev 1
1/15
This is information on a product in full production.
Contents
STD1NK60-1
Contents
2/15
DocID030308 Rev 1
STD1NK60-1
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
Value
600
600
±30
1.0
Unit
V
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
0.63
4
A
A
P
TOT
I
AR
Total dissipation at T
C
= 25 °C
Avalanche current, repetitive or not-repetitive
30
W
1
A
(pulse width limited by T
jmax
)
Single pulse avalanche energy (starting T
j
= 25 °C, I
D
= I
AR
V
DD
= 50 V)
,
E
AS
25
3
mJ
V/ns
T
j
Operating junction temperature range
Storage temperature range
– 55 to 150
°C
T
stg
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
≤ 1.0 A, di/dt ≤ 100 A/µs; V
DD
≤ V
(BR)DSS
, T
J
≤ T
JMAX
SD
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
4.2
Unit
°C/W
°C/W
Thermal resistance junction-case
Thermal resistance junction-ambient
100
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Electrical characteristics
STD1NK60-1
2
Electrical characteristics
T
C
= 25 ° C unless otherwise specified
Table 4: On/off-state
Test conditions
Symbol
Parameter
Drain-source
Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
600
V
breakdown voltage
V
GS
= 0 V, V
DS
= 600 V
1
µA
µA
Zero gate voltage
drain current
I
DSS
V
GS
= 0 V, V
DS
= 600 V
50
Gate body leakage
current
I
GSS
V
DS
=0 V, V
GS
= ±30 V
±100
3.7
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2.25
3
Static drain-source on-
V
GS
= 10 V, I
D
= 0.5 A
resistance
7.3
8.5
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 5: Dynamic
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Test conditions
Min. Typ. Max. Unit
–
–
156
–
–
pF
pF
C
oss
23.5
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer
capacitance
C
rss
–
3.8
–
pF
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 1 A
V
GS
= 0 to 10 V
–
–
7
–
–
nC
nC
Q
gs
Gate-source charge
1.1
Q
gd
Gate-drain charge
–
3.7
–
nC
Table 6: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Min. Typ. Max. Unit
V
DD
= 300 V, I
D
= 0.5 A, R
G
= 4.7 Ω
–
–
–
6.5
5
–
–
–
ns
ns
ns
V
GS
= 10 V
t
d(off)
Turn-off delay time
19
t
f
Fall time
–
25
–
ns
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STD1NK60-1
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Source-drain diode
Test conditions
Symbol
I
SD
Parameter
Source-drain current
–
–
1
4
A
A
Source-drain current
(pulsed)
t
rr
Forward on voltage
I
SD
= 1.0 A, V
GS
= 0 V
–
–
1.6
V
Reverse recovery time
140
240
ns
I
SD
= 1.0 A, di/dt = 100 A/µs,
V
DD
= 25 V
Reverse recovery
charge
Q
rr
–
nC
Reverse recovery
current
I
RRM
t
rr
–
–
–
3.3
229
377
A
Reverse recovery time
ns
nC
I
SD
= 1.0 A, di/dt = 100 A/µs,
V
DD
= 25 V, T
j
= 150 °C
Reverse recovery
charge
Q
rr
Reverse recovery
current
I
RRM
–
3.3
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µ s, duty cycle 1.5%
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Electrical characteristics
STD1NK60-1
2.1
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Capacitance variations
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STD1NK60-1
Electrical characteristics
Figure 8: Static drain-source on-resistance
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Source-drain forward
characteristics
Figure 12: Normalized V
(BR)DSS
vs temperature
Figure 13: Maximum avalanche energy vs
temperature
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Electrical characteristics
STD1NK60-1
Figure 14: Maximum Id current vs T
c
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STD1NK60-1
Test circuits
3
Test circuits
Figure 15: Test circuit for resistive load
switching times
Figure 16: Test circuit for gate charge
behavior
Figure 17: Test circuit for inductive load
switching and diode recovery times
Figure 18: Unclamped inductive load test
circuit
Figure 19: Unclamped inductive waveform
Figure 20: Switching time waveform
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Package information
STD1NK60-1
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
IPAK (TO-251) type A package information
Figure 21: IPAK (TO-251) type A package outline
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STD1NK60-1
Package information
Table 8: IPAK (TO-251) type A package mechanical data
mm
Dim.
Min.
2.20
0.90
0.64
Typ.
Max.
2.40
1.10
0.90
0.95
5.40
A
A1
b
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
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Package information
STD1NK60-1
4.2
IPAK (TO-251) type C package information
Figure 22: IPAK (TO-251) type C package outline
0068771_IK_typeC_rev14
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Package information
Table 9: IPAK (TO-251) type C package mechanical data
mm
Dim.
Min.
Typ.
Max.
2.20
2.30
2.35
A
A1
b
0.90
0.66
1.00
5.33
1.10
0.79
0.90
5.43
0.59
0.59
6.20
5.55
6.70
4.95
2.30
4.60
16.78
9.60
1.20
1.25
7°
b2
b4
c
5.23
0.46
0.46
6.00
5.20
6.50
4.60
2.20
4.40
16.18
9.00
0.90
0.90
3°
c2
D
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
D1
E
E1
e
e1
H
L
L1
L2
θ1
θ2
1°
3°
5°
DocID030308 Rev 1
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Revision history
STD1NK60-1
5
Revision history
Table 10: Document revision history
Revision
Date
Changes
First release.
09-Feb-2017
1
14/15
DocID030308 Rev 1
STD1NK60-1
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