STMicroelectronics-STD26P3LLH6
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STD26P3LLH6
P-channel 30
V
,
0
.024
Ω
typ., 12 A, STripFET™ VI DeepGATE™
Power MOSFET in a DPAK package
Datasheet
–
production data
Features
R
DS(on)
max
Order code
V
DSS
I
D
P
TOT
TAB
STD26P3LLH6 30
V 0.030
Ω
(1)
12 A
40 W
3
2
1
1. @
V =
10 V
GS
•
R
DS(on)
* Q
g
industry benchmark
•
Extremely low on-resistance R
DS(on)
•
High avalanche ruggedness
•
Low gate input resistance
DPAK
Applications
Figure 1. Internal schematic diagram
•
Switching applications
D(2 or
T
A
B)
•
LCC converters, resonant converters
Description
This device is a P-channel Power MOSFET
developed using the 6
th
generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R
DS(on)
in all packages
G(1)
S(3)
AM11258v1
Table 1. Device summary
Order code
Marking
Package
DPAK
Packaging
STD26P3LLH6
26P3LLH6
T
a
pe and reel
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
February 2014
DocID023574 Rev 5
1/16
This is information on a product in full production.
Contents
STD26P3LLH6
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STD26P3LLH6
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
GS
Drain-source voltage
30
±20
12
V
V
Gate-source voltage
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
(1)
I
D
8.5
48
A
(1)(2)
I
DM
A
(1)
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Storage temperature
40
W
T
stg
T
j
-55 to 175
175
°C
°C
Max. operating junction temperature
1. Limited
by wire bonding.
2. Pulse
width limited by safe operating area.
Table 3. Thermal data
Parameter
R
thj-case
Thermal resistance junction-case max
Symbol
Value
Unit
3.75
°C/W
Table 4. Avalanche characteristics
Parameter
Symbol
Value
Unit
Single pulse avalanche energy
(starting T
J
=25 °C, I
D
=6 A, I
AS
=12 A, V
DD
=25 V,
V
gs
=10 V)
E
AS
350
mJ
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
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16
Electrical characteristics
STD26P3LLH6
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. Static
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
Drain-source breakdown
Voltage
V
(BR)DSS
I
D
= 250
μ
A, V
GS
= 0
30
V
V
DS
= 30 V
1
μ
A
μ
A
nA
V
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
I
GSS
V
DS
= 30 V, Tc = 125 °C
10
Gate body leakage current
V
GS
= ± 20
V
,
(
V
DS
= 0)
±
100
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250
μ
A
1
2.5
V
GS
= 10
V
,
I
D
= 6 A
0.024
0.03
Ω
Static drain-source on-
resistance
R
DS(on)
V
GS
= 4.5
V
,
I
D
= 6 A
0.038 0.045
Ω
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min
Typ.
Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
1450
178
–
–
pF
pF
V
DS
= 25
V
,
f
=1 MHz,
V
GS
= 0
C
oss
Reverse transfer
capacitance
C
rss
–
120
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
12
4.4
5
–
–
–
nC
nC
nC
V
DD
= 24 V, I
D
= 12 A
V
GS
= 4.5 V
f = 1 MHz, gate DC
Bias = 0,
test signal level = 20 m
V
,
I
D
= 0
R
g
Gate input resistance
–
1.8
–
Ω
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
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STD26P3LLH6
Electrical characteristics
Table 7. Switching on/off (inductive load)
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test conditions
Min. Typ.
Max. Unit
Turn-on delay time
Rise time
–
–
–
–
15
15
24
21
–
–
–
–
ns
ns
ns
ns
V
DD
= 24 V, I
D
= 1.5 A,
G
= 4.7
Ω
, V
GS
= 10 V
R
Turn-off delay time
Fall time
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
Source-drain current
–
–
–
–
–
12
48
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 12 A, V
GS
= 0
1.1
V
t
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 12 A,
di/dt = 100 A/
μ
s,
V
DD
= 16 V
15
ns
nC
Q
rr
6.5
I
RRM
Reverse recovery current
–
0.9
A
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
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16
Electrical characteristics
STD26P3LLH6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15963v1
I
D
(A)
Tj=175°C
T
c
=25°C
Single pulse
100
µ
s
1ms
10
10ms
1
0.1
10
V
DS
(V)
0.1
1
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15964v1
AM15965v1
I
D
(A)
D
(A)
I
9V
8V
7V
6V
V
=1V
DS
10V
35
30
35
30
25
20
15
5V
25
20
15
4V
10
5
10
3V
5
0
0
0
0.2
2
0.8
1
1.2
V
DS
(V)
8
V
GS
(V)
0.4 0.6
0
4
6
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM15967v1
AM15966v1
V
GS
(V)
R
DS(on)
(
m
Ω)
V
GS
=10V
12
40.0
10
8
30.0
20.0
6
4
10.0
0.0
2
0
2
4
8
10
0
4
12
0
6
I
D
(A)
8
20 24 28
Q
g
(nC)
16
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STD26P3LLH6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
AM15968v1
AM15969v1
C
(pF)
1600
V
GS(th)
(norm)
I
D
=250µA
1
1400
1200
Ciss
0.8
0.6
1000
800
600
400
0.4
0.2
0
200
0
Coss
Crss
25
0
15
20
-55
120
95
5
10
V
DS
(V)
-30 -5
20 45 70
T
J
(°C)
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Normalized V
DS
vs temperature
AM15970v1
AM15971v1
R
DS(on)
(norm)
V
DS
(norm)
I
D
=6A
1.6
1.4
1.2
1.08
I
D
=1mA
1.06
1.04
1.02
1
1
0.8
0.6
0.98
0.4
0.2
0.96
0.94
0
-55
-55
-30
-30
5
20 45 70
120
T
J
(°C)
5
20 45 70
120
95
T
J
(°C)
95
Figure 12. Source-drain diode forward
characteristics
AM15972v1
V
SD
(V)
T
J
=-55°C
1
0.9
0.8
0.7
0.6
0.5
T
J
=25°C
T
J
=175°C
2
4
6
8
10
I
SD
(A)
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16
Test circuits
STD26P3LLH6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
AM11255v1
AM11256v1
Figure 15. Test circuit for diode recovery
behavior
Figure 16. Unclamped inductive load test circuit
L
V
D
2200
μ
F
3.3
μ
F
V
DD
I
D
P
w
D.U.
T
.
V
GS
AM11257v1
AM18080v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
V
DD
V
DD
90%
10%
0
AM01472v1
AM01473v1
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STD26P3LLH6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID023574 Rev 5
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16
Package mechanical data
STD26P3LLH6
Figure 19. DPAK (TO-252) type A drawing
0068772_M_type_A
10/16
DocID023574 Rev 5
STD26P3LLH6
Package mechanical data
Table 9. DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1.00
4.60
10.10
1.50
L
(L1)
L2
L4
R
2.80
0.80
0.60
0°
1.00
8°
0.20
V2
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16
Package mechanical data
STD26P3LLH6
Figure 20. DPAK (TO-252) type A footprint
(a)
Footprint_REV_M_type_A
a. All
dimensions are in millimeters
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STD26P3LLH6
Packaging mechanical data
5
Packaging mechanical data
Figure 21. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
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16
Packaging mechanical data
STD26P3LLH6
Figure 22. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl
ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
13.2
18.4
22.4
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
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STD26P3LLH6
Revision history
6
Revision history
Table 11. Document revision history
Changes
Date
Revision
22-Aug-2012
1
First release
31-Jan-2013
2
16-Jul-2013
10-Sep-2013
3
4
06-Feb-2014
5
– Minor text changes
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STD26P3LLH6
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