STMicroelectronics-STD2LN60K3
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STD2LN60K3, STF2LN60K3,
STU2LN60K3
N-channel 600
V
, 4
Ω
typ., 2 A SuperMESH3™ Power MOSFET
in D
P
A
K, TO-220FP and I
P
A
K packages
Datasheet — production data
Features
TAB
R
DS(on)
max
Order codes
V
DSS
I
D
P
TOT
3
1
3
2
D
P
A
K
STD2LN60K3
STF2LN60K3
STU2LN60K3
45 W
20 W
45 W
1
600 V
< 4.5
Ω
2 A
TO-220FP
T
A
B
■
100% avalanche tested
3
■
Extremely high dv/dt capability
■
Very low intrinsic capacitance
2
1
IPAK
■
Improved diode reverse recovery
characteristics
■
Zener-protected
Figure 1.
Internal schematic diagram
Applications
D(2,TAB)
■
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
G(1)
STMicroelectronics’ SuperMESH™ technolog
y
,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capabilit
y
,
r
endering them suitable
for the most demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD2LN60K3
STF2LN60K3
STU2LN60K3
D
P
A
K
TO-220FP
I
P
A
K
T
a
pe and reel
T
u
be
2LN60K3
July 2012
Doc ID 023500 Rev 1
1/20
This is information on a product in full production.
20
Contents
STD2LN60K3, STF2LN60K3, STU2LN60K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
D
P
A
K TO-220FP
IPAK
V
DS
V
GS
I
D
Drain-source voltage
600
30
V
V
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
2
1.26
8
2
(1)
1.26
(1)
8
(1)
2
1.26
8
A
I
D
A
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
45
20
45
W
0.36
0.16
0.36
W/°C
Gate source ESD
V
ESD(G-S)
2500
12
V
(HBM-C = 100 p
F
, R =
1
.5 k
Ω
)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by package
2. Pulse
width limited by safe operating area
3.
I
≤
2 A, di/dt
≤
400 A/µs, peak V
< V
DS (BR)DSS
SD
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
D
P
A
K TO-220FP
I
P
A
K
R
thj-case
Thermal resistance junction-case max
R
thj-pcb
Thermal resistance junction-pcb max
R
thj-amb
Thermal resistance junction-amb max
2.78
50
6.25
62.5
2.78
°C/W
°C/W
°C/W
100
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
I
AR
2
A
Single pulse avalanche energy
E
AS
80
mJ
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 023500 Rev 1
3/20
Electrical characteristics
STD2LN60K3, STF2LN60K3, STU2LN60K3
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
T
a
ble 5.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 600 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
600
V
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 600
V
,
T
C
=125 °C
50
Gate-body leakage
I
GSS
V
GS
=
20 V
10
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on
Gate threshold voltage
V
DS
= V
GS
, I
D
= 50 µA
3
3.75
4
4.5
4.5
Static drain-source on-
V
GS
= 10
V
,
I
D
= 1 A
resistance
Ω
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
235
22
pF
V
DS
= 50
V
, f = 1
M
Hz, V
GS
= 0
–
–
pF
pF
Reverse transfer
capacitance
3.5
Eq. capacitance time
related
(1)
C
o(tr)
–
–
–
14
10
7
–
–
–
pF
pF
Ω
V
GS
= 0, V
DS
= 0 to 480 V
Eq. capacitance
energy related
(2)
C
o(er)
Intrinsic gate
resistance
R
G
f = 1 MHz open drain
V
DD
= 480
V
,
I
D
= 1 A,
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
12
1.8
7.7
nC
nC
nC
V
GS
= 10 V
–
–
1.
2.
C
. time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq
oss
when V
increases from 0 to 80% V
DS
DSS
C
C
. energy related is defined as a constant equivalent capacitance giving the same stored energy as
oss eq
oss
when V
S increases from 0 to 80% V
DSS
D
4/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Electrical characteristics
Min. Typ.
Max. Unit
T
a
ble 7.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
10
8.5
23.5
21
ns
ns
ns
ns
V
DD
= 300
V
,
I
D
=1 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
T
u
rn-off-delay time
Fall time
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
2
8
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 2 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
200
800
8
ns
nC
A
I
SD
= 2 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2 A, di/dt = 100 A/µs
DD
= 60
V
,
T
j
= 150 °C
230
950
8.5
ns
nC
A
Q
rr
V
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max.
Unit
Gate-source breakdown
voltage
(1)
BV
GSO
Igs= 1
mA (open drain)
30
–
V
1. The
built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Doc ID 023500 Rev 1
5/20
Electrical characteristics
STD2LN60K3, STF2LN60K3, STU2LN60K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D
P
A
K and
Figure 3.
I
P
A
K
Thermal impedance for DPAK and
IPAK
AM1
3
051v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10
10
µs
100
µs
1
1m
s
10m
s
0.1
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM1
3
052v1
I
D
(A)
10
µs
1
100
µs
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM1
3
054v1
AM1
3
055v1
I
D
(A)
I
D
(A)
V
G
S
=10V
V
D
S
=15V
2.5
2.0
2.0
1.5
1.0
6V
1.5
1.0
0.5
0
0.5
0
5V
2
8
V
D
S
(V)
8
V
G
S
(V)
0
2
4
6
0
4
6
6/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Static drain-source on-resistance
AM1
3
056v1
D
S
(V)
AM1
3
057v1
V
(V)
G
S
R
D
S
(on)
(
Ω
)
V
V
DD
=4
8
0V
V
G
S
=10V
I
D
=2A
12
10
8
4.2
500
V
D
S
4.0
400
3
00
200
3
.
8
3
.6
3
.4
6
4
2
0
100
0
3
.2
3
.0
1.0 1.2
0.4 0.6 0.
8
0.2
10
Q
g
(nC)
I
D
(A)
0
5
0
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
AM1
3
05
8
v1
AM1
3
059v1
C
E
o
ss
(pF)
(
µ
J)
Ci
ss
1.5
100
1
10
1
Co
ss
Cr
ss
0.5
0
0.1
100
200
400 500
600
1
10
V
D
S
(V)
0
100
3
00
V
D
S
(V)
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on-resistance vs
vs temperature
temperature
AM1
3
060v1
AM1
3
061v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
I
V
D
=1.1A
I
D
=50
µ
A
G
S
=10V
1.10
1.00
0.90
2.5
2.0
1.5
1.0
0.
8
0
0.5
0
0.70
-75
-75
-25
25
75
T
J
(°C)
-25
25
75
T
J
(°C)
125
125
Doc ID 023500 Rev 1
7/20
Electrical characteristics
STD2LN60K3, STF2LN60K3, STU2LN60K3
Figure 14.
Normalized BV
DSS
vs temperature
Figure 15.
Source-drain diode forward
characteristics
AM1
3
062v1
AM1
3
06
3
v1
BV
D
SS
S
D
(V)
0.9
V
(norm)
T
J
=-50°C
I
D
=1mA
T
J
=25°C
1.10
0.
8
0.7
0.6
T
J
=150°C
1.05
1.00
0.5
0.4
0.
3
0.2
0.95
0.90
0.1
0
-75
0
-25
25
75
T
J
(°C)
1
2
3
4
5
I
S
D
(A)
125
Figure 16.
Maximum avalanche energy vs
temperature
AM1
3
064v1
E
A
S
(mJ)
90
I
D
=2 A
V
DD
=50 V
8
0
70
60
50
40
3
0
20
10
0
0
20
40
60
8
0 100
120
140 T
J
(°C)
8/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped Inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 023500 Rev 1
9/20
Package mechanical data
STD2LN60K3, STF2LN60K3, STU2LN60K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK is an ST trademark.
10/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Package mechanical data
Table 10.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
Doc ID 023500 Rev 1
11/20
Package mechanical data
Figure 23.
D
P
A
K (TO-252) drawing
STD2LN60K3, STF2LN60K3, STU2LN60K3
006
8
772_I
12/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
T
a
ble 11.
TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 023500 Rev 1
13/20
Package mechanical data
Figure 24.
TO-220FP drawing
STD2LN60K3, STF2LN60K3, STU2LN60K3
7012510_Rev_K_B
14/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Package mechanical data
Table 12.
IPAK (TO-251) mechanical data
mm.
typ
DIM.
min.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
5.20
0.3
B5
c
c2
D
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10
o
Doc ID 023500 Rev 1
15/20
Package mechanical data
Figure 25.
I
P
A
K (TO-251) drawing
STD2LN60K3, STF2LN60K3, STU2LN60K3
006
8
771_H
AM09214V1
16/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Packaging mechanical data
5
Packaging mechanical data
Table 13.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
Figure 26.
D
P
A
K footprint
(a)
6.7
3
1.
8
1.6
2.
3
2.
3
6.7
1.6
AM0
88
50v1
a. All
dimension are in millimeters
Doc ID 023500 Rev 1
17/20
Packaging mechanical data
Figure 27.
Tape for D
P
A
K (TO-252)
STD2LN60K3, STF2LN60K3, STU2LN60K3
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
Top cover
t
a
pe
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 28.
Reel for DPAK (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
18/20
Doc ID 023500 Rev 1
STD2LN60K3, STF2LN60K3, STU2LN60K3
Revision history
6
Revision history
T
a
ble 14.
Document revision history
Date
Revision
Changes
05-Jul-2012
1
First release.
Doc ID 023500 Rev 1
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STD2LN60K3, STF2LN60K3, STU2LN60K3
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Doc ID 023500 Rev 1
