STMicroelectronics-STD3NM60N
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STD3NM60N
N-channel 600
V
,
1
.6
Ω
, 3.3 A, MDmesh™ II Power MOSFET
in D
P
A
K package
Datasheet — preliminary data
Features
V
DSS
@T
J
max
R
DS(on)
max.
Order codes
I
D
STD3NM60N
650 V
< 1.8
Ω
3.3 A
TAB
3
■
100% avalanche tested
1
■
Low input capacitance and gate charge
■
Low gate input resistance
D
P
A
K
Applications
■
Switching applications
Description
Figure 1.
Internal schematic diagram
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technolog
y
.
T
his revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$ꢅꢆ OR
4
!
“ꢇ
‘ꢅꢁꢇ
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Order codes
STD3NM60N
Device summary
Marking
Package
D
P
A
K
Packaging
T
a
pe and reel
3NM60N
May 2012
Doc ID 023056 Rev 1
1/15
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
15
Contents
STD3NM60N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 023056 Rev 1
STD3NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Parameter
Gate- source voltage
Symbol
Value
Unit
V
GS
I
D
25
3.3
2.5
13
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
A
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
50
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
T
J
Operating junction temperature
Storage temperature
– 55 to 150
°C
T
stg
1. Pulse
width limited by safe operating area.
2.
≤
3.3 A, di/dt
≤
400 A/µs,
V peak
≤
V
I
, V
= 80% V
.
SD
DS
(BR)DSS
DD
(BR)DSS
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
R
thj-pcb
Thermal resistance junction-pcb max
2.5
50
°C/W
°C/W
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
I
AR
1
A
Single pulse avalanche energy (starting
T
J
=25 °C, I
D
=I
AR
, V
DD
=50 V)
E
AS
86
mJ
Doc ID 023056 Rev 1
3/15
Electrical characteristics
STD3NM60N
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
T
a
ble 5.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 600 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
600
V
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 600
V
,
T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
25 V; V
DS
=0
100 nA
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
Static drain-source
V
GS
= 10
V
,
I
D
= 1.65A
on-resistance
1.6
1.8
Ω
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
188
12.8
1.1
pF
V
DS
= 50
V
, f = 1
M
Hz,
–
–
pF
pF
V
GS
= 0
Reverse transfer
capacitance
Output capacitance
time related
(1)
C
oss(tr)
V
DS
= 0, V
GS
= 0
–
–
96.8
6
–
–
pF
R
g
Gate input resistance
f=1 MHz open drain
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480
V
,
I
D
= 3.3A,
V
GS
= 10 V
9.5
2
nC
nC
nC
–
–
5
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
.
DSS
DS
4/15
Doc ID 023056 Rev 1
STD3NM60N
Electrical characteristics
Min. Typ.
Max Unit
T
a
ble 7.
Switching times
Parameter
Symbol
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
6
ns
ns
ns
ns
V
DD
= 300
V
,
I
D
= 1.65 A,
9.5
23
31
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
T
u
rn-off-delay time
Fall time
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I
SD
Source-drain current
3.3
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
13.2
(2)
V
SD
Forward on voltage
I
SD
= 3.3 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 3.3 A, di/dt = 100 A/µs
V
DD
= 60 V
200
910
9.1
ns
nC
A
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 3.3 A, di/dt = 100 A/µs
236
1073
9.1
ns
nC
A
Q
rr
V
DD
= 60 V T
J
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 023056 Rev 1
5/15
Electrical characteristics
STD3NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM1129
3
v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10
10
µs
100
µs
1
0.1
1m
s
10m
s
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM11294v1
AM11295v1
I
D
(A)
I
D
(A)
V
G
S
=10V
V
G
S
=20V
5
5
4
3
4
3
2
6V
2
1
0
5V
1
0
2
16
20
V
D
S
(V)
8
V
G
S
(V)
0
4
8
12
0
4
6
Figure 6.
Gate charge vs gate-source voltage Figure 7.
Static drain-source on-resistance
AM11296v1
AM11297v1
V
(V)
G
S
R
D
S
(on)
(
Ω
)
V
D
S
(V)
V
DD
=4
8
0V
V
G
S
=10V
12
V
D
S
I
D
=
3
.
3
A
500
1.66
1.62
1.5
8
10
8
400
3
00
200
100
6
4
2
0
1.54
1.50
0
(nC)
1
1.5
2
2.5
3
0.5
4
8
10
Q
g
I
D
(A)
0
2
6
0
6/15
Doc ID 023056 Rev 1
STD3NM60N
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
Output capacitance stored energy
AM1129
8
v1
AM11299v1
C
E
o
ss
(pF)
(
µ
J)
1.6
1.2
1000
100
10
Ci
ss
0.
8
0.4
0
Co
ss
Cr
ss
1
0.1
100
200
400 500
1
10
V
D
S
(V)
0
100
3
00
V
D
S
(V)
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on-resistance vs.
vs. temperature
temperature
AM11
3
00v1
AM11
3
01v1
V
G
S
(th)
(norm)
R
D
S
(on)
(norm)
I
D
=250
µ
A
I
D
=1.65A
2.0
1.6
1.2
1.02
0.94
0.
8
6
0.7
8
0.
8
0.70
0.4
-50
-50
T
J
(°C)
T
J
(°C)
0
50
0
50
100
100
Figure 12.
Source-drain diode forward
characteristics
Figure 13.
Normalized V
DS
vs. temperature
AM11
3
0
3
v1
AM0902
8
v1
V
S
D
(V)
V
D
S
(norm)
T
J
=-50°C
I
D
=1mA
1.10
1.2
T
J
=25°C
1.0
8
1.1
1.0
0.9
1.06
1.04
1.02
1.00
0.9
8
0.96
T
J
=150°C
0.
8
0.7
0.6
0.5
0.94
0.92
0
3
-50
-25
0.5
1
1.5
2
2.5
I
S
D
(A)
0
25 50
75
T
J
(°C)
100
Doc ID 023056 Rev 1
7/15
Test circuits
STD3NM60N
3
Test circuits
Figure 14.
Switching times test circuit for
resistive load
Figure 15.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 16.
Test circuit for inductive load
switching and diode recovery times
Figure 17.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 18.
Unclamped inductive waveform
Figure 19.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
8/15
Doc ID 023056 Rev 1
STD3NM60N
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
Doc ID 023056 Rev 1
9/15
Package mechanical data
STD3NM60N
Table 9.
Dim.
D
P
A
K (TO-252) mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
1.50
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
10/15
Doc ID 023056 Rev 1
STD3NM60N
Package mechanical data
Figure 20.
D
P
A
K (TO-252) drawing
006
8
772_I
Figure 21.
D
P
A
K footprint
(a)
6.7
3
1.
8
1.6
2.
3
2.
3
6.7
1.6
AM0
88
50v1
a. All
dimensions are in millimeters
Doc ID 023056 Rev 1
11/15
Packaging mechanical data
STD3NM60N
5
Packaging mechanical data
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
12/15
Doc ID 023056 Rev 1
STD3NM60N
Packaging mechanical data
Figure 22.
Tape for D
P
A
K (TO-252)
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
Top cover
t
a
pe
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 23.
Reel for DPAK (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
Doc ID 023056 Rev 1
13/15
Revision history
STD3NM60N
6
Revision history
12
T
a
ble 11.
Document revision history
Date
Revision
Changes
10-May-2012
1
First release
14/15
Doc ID 023056 Rev 1
STD3NM60N
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Doc ID 023056 Rev 1
15/15
