STMicroelectronics-STD4NK50ZT4
| Part # | STMicroelectronics-STD4NK50ZT4 |
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STD4NK50Z-1, STD4NK50ZT4
Datasheet
N-channel 500
V
,
2
.2 Ω typ., 3 A SuperMESH™ Power MOSFE
T
s
i
n
IPAK and DPAK packages
Features
V
R
max.
P
TOT
Order codes
STD4NK50Z-1
STD4NK50ZT4
Package
IPAK
DS
DS(on)
TAB
TAB
3
2
500 V
2.7 Ω
45 W
1
3
DPAK
2
IPAK
1
DPAK
•
•
•
•
•
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
D(2, TAB)
G(1)
Applications
•
Switching applications
S(3)
AM01475V1
Description
These high-voltage devices are Zener-protected N-channel Power MOSFE
T
s
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
Product status link
DS2913
–
Rev 3
–
August 2018
For further information contact your local STMicroelectronics sales office.
STD4NK50Z-1, STD4NK50ZT4
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
500
±30
3
Unit
V
V
Drain-source voltage
Gate-source voltage
DS
GS
V
V
I
Drain current (continuous) at T
= 25 °C
A
D
D
C
I
Drain current (continuous) at T
= 100 °C
1.9
12
A
C
I
Drain current (pulsed)
A
DM
P
T
o
tal dissipation at T
= 25 °C
45
W
TOT
C
ESD
Peak diode recovery voltage slope
4.5
2.8
V/ns
kV
Gate-source human body model (C = 100 p
F
, R =
1
.5 kΩ)
Operating junction temperature range
Storage temperature range
T
j
-55 to 150
°C
T
stg
1. Pulse
width limited by safe operating area.
2. ≤
3 A, di/dt ≤ 200 A/µs, V
≤ V
.
(BR)DSS
I
SD
DD
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
IPAK
DPAK
R
Thermal resistance junction-case
2.78
°C/W
°C/W
°C/W
thj-case
R
Thermal resistance junction-ambient
Thermal resistance junction-pcb
100
thj-amb
R
thj-pcb
50
1. When
mounted on an 1-inch² FR-4, 2oz Cu board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I
3
A
AR
(pulse width limited by T
max)
j
Single pulse avalanche energy
E
120
mJ
AS
(starting T
= 25 °C, I
= I
, V
= 50 V)
j
D
AR
DD
DS2913
–
Rev 3
page 2/23
STD4NK50Z-1, STD4NK50ZT4
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
Drain-source breakdown
voltage
V
V
V
= 0
V
, I
= 1
m
A
500
(BR)DSS
GS
D
= 0
V
, V
=
5
00 V
1
µA
GS
DS
Zero gate voltage drain
current
I
I
DSS
V
T
= 0
V
, V
=
5
00 V,
DS
GS
50
µA
C
V
V
= 0
V
, V
=
±
20 V
Gate-body leakage current
Gate threshold voltage
±10
4.5
µA
V
GSS
DS
GS
V
GS(th)
= V
, I
= 50 µA
3
3.75
2.2
DS
GS
GS
D
Static drain-source on
resistance
R
DS(on)
V
= 10 V, I
= 1.5 A
2.7
Ω
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
310
49
Max.
Unit
C
iss
V
V
= 25 V, f = 1 MHz,
= 0 V
DS
C
oss
Output capacitance
–
–
GS
pF
C
rss
Reverse transfer capacitance
Equivalent output capacitance
T
o
tal gate charge
10
V
= 0
V
, V
= 0 V
t
o 400 V
C
oss eq.
33
GS
DS
Q
V
V
= 400 V, I
= 3 A,
12
g
DD
GS
D
= 0 to 10 V
Q
gs
Gate-source charge
3
–
nC
Q
Gate-drain charge
7
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0 to
oss DS
80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Rise time
Min.
Typ.
10
7
Max.
Unit
t
V
= 250
V
, I
=
1
.5 A,
DD D
d(on)
R
G
= 4.7 Ω, V
= 10 V
GS
t
r
–
ns
t
Turn-off delay time
21
d(off)
t
Fall time
11
f
DS2913
–
Rev 3
page 3/23
STD4NK50Z-1, STD4NK50ZT4
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
3
Unit
I
Source-drain current
–
–
–
–
–
SD
A
I
Source-drain current (pulsed)
Forward on voltage
12
SDM
V
I
I
= 3 A, V
= 0 V
1.6
V
SD
GS
SD
t
rr
= 3 A, di/dt = 100 A/µs
= 40 V, T
= 150 °C
Reverse recovery time
Reverse recovery charge
260
935
ns
nC
SD
V
Q
DD
j
rr
I
Reverse recovery current
–
7.2
A
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 μs, duty cycle 1.5 %.
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Gate-source breakdown
voltage
V
I
= ±1 mA, I
= 0 A
±30
–
–
V
(BR)GSO
GS
D
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS2913
–
Rev 3
page 4/23
STD4NK50Z-1, STD4NK50ZT4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GC20460
K
10
0
10
-1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Capacitance variations
Figure 6.
Gate charge vs gate-source voltage
DS2913
–
Rev 3
page 5/23
STD4NK50Z-1, STD4NK50ZT4
Electrical characteristics (curves)
Figure 7.
Normalized gate threshold voltage vs
temperature
Figure 8.
Static drain-source on resistance
Figure 9.
Source-drain diode forward characteristic
Figure 10.
Maximum avalanche energy vs temperature
Figure 11.
Normalized V
(BR)DSS
vs temperature
Figure 12.
Normalized on resistance vs temperature
DS2913
–
Rev 3
page 6/23
STD4NK50Z-1, STD4NK50ZT4
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS2913
–
Rev 3
page 7/23
STD4NK50Z-1, STD4NK50ZT4
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS2913
–
Rev 3
page 8/23
STD4NK50Z-1, STD4NK50ZT4
IPAK (TO-251) type A package information
4.1
IPAK (TO-251) type A package information
Figure 19.
IPAK (TO-251) type A package outline
0068771_IK_typeA_rev14
DS2913
–
Rev 3
page 9/23
STD4NK50Z-1, STD4NK50ZT4
IPAK (TO-251) type A package information
Table 9.
IPAK (TO-251) type A package mechanical data
mm
Dim.
Min.
2.20
0.90
0.64
Typ.
Max.
2.40
1.10
0.90
0.95
5.40
A
A1
b
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
DS2913
–
Rev 3
page 10/23
STD4NK50Z-1, STD4NK50ZT4
IPAK (TO-251) type C package information
4.2
IPAK (TO-251) type C package information
Figure 20.
IPAK (TO-251) type C package outline
0068771_IK_typeC_rev14
DS2913
–
Rev 3
page 11/23
STD4NK50Z-1, STD4NK50ZT4
IPAK (TO-251) type C package information
Table 10.
IPAK (TO-251) type C package mechanical data
mm
Typ.
2.30
1.00
Dim.
Min.
2.20
0.90
0.66
Max.
2.35
1.10
0.79
0.90
5.43
0.59
0.59
6.20
5.55
6.70
4.95
2.30
4.60
16.78
9.60
1.20
1.25
7°
A
A1
b
b2
b4
c
5.23
0.46
0.46
6.00
5.20
6.50
4.60
2.20
4.40
16.18
9.00
0.80
0.90
3°
5.33
c2
D
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
D1
E
E1
e
e1
H
L
L1
L2
θ1
θ2
1°
3°
5°
DS2913
–
Rev 3
page 12/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) type A package information
4.3
DPAK (TO-252) type A package information
Figure 21.
DPAK (TO-252) type A package outline
0068772_A_25
DS2913
–
Rev 3
page 13/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) type A package information
Table 11.
DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.286
4.572
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS2913
–
Rev 3
page 14/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) type C package information
4.4
DPAK (TO-252) type C package information
Figure 22.
DPAK (TO-252) type C package outline
0068772_C_25
DS2913
–
Rev 3
page 15/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) type C package information
Table 12.
DPAK (TO-252) type C mechanical data
mm
Typ.
2.30
1.01
Dim.
Min.
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.25
6.50
4.70
2.186
9.80
1.40
Max.
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
A
A1
A2
b
b4
c
5.33
c2
D
6.10
6.60
D1
E
6.70
E1
e
2.286
10.10
2.386
10.40
1.70
H
L
1.50
L1
L2
L3
L4
L6
θ1
θ2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DS2913
–
Rev 3
page 16/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) type C package information
Figure 23.
DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25_C
DS2913
–
Rev 3
page 17/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) packing information
4.5
DPAK (TO-252) packing information
Figure 24.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS2913
–
Rev 3
page 18/23
STD4NK50Z-1, STD4NK50ZT4
DPAK (TO-252) packing information
Figure 25.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 13.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS2913
–
Rev 3
page 19/23
STD4NK50Z-1, STD4NK50ZT4
Ordering information
5
Ordering information
Table 14.
Order codes
Order code
STD4NK50Z-1
STD4NK50ZT4
Marking
D4NK50Z
Package
Packing
Tube
IPAK
DPAK
T
a
pe and reel
DS2913
–
Rev 3
page 20/23
STD4NK50Z-1, STD4NK50ZT4
Revision history
Table 15.
Document revision history
Date
Version
Changes
09-Dec-2002
20-Aug-2018
2
Updated document.
Removed maturity status indication from cover page. The document status is
production data.
The part numbers STP4NK50Z and STP4NK50FP have been moved to a
separate datasheet.
3
Minor text changes.
DS2913
–
Rev 3
page 21/23
STD4NK50Z-1, STD4NK50ZT4
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
IPAK (TO-251) type A package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
IPAK (TO-251) type C package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
DPAK (TO-252) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
12
DPAK (TO-252) type C package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
14
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
17
Ordering information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
DS2913
–
Rev 3
page 22/23
STD4NK50Z-1, STD4NK50ZT4
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS2913
–
Rev 3
page 23/23
