STMicroelectronics-STD5N60DM2
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STD5N60DM2
Datasheet
N-channel 600
V
,
1
.38 Ω typ., 3.5 A MDmesh™ DM2
Power MOSFET in a DPAK package
Features
V
R
DS(on)
max.
I
D
P
TOT
Order code
DS
TAB
STD5N60DM2
600 V
1.55 Ω
3.5 A
45 W
3
2
1
•
•
•
•
•
•
Fast-recovery body diode
DPAK
Extremely low gate charge and input capacitance
Low on-resistance
D(2, TAB)
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
G(1)
Applications
•
Switching applications
S(3)
AM01475V1
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast
recovery diode series. It offers very low recovery charge (Q
rr
) and time (t
rr
) combined
with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link
Product summary
Order code
Marking
STD5N60DM2
5N60DM2
DPAK
Package
Packing
T
a
pe and reel
DS11742
–
Rev 3
–
June 2018
For further information contact your local STMicroelectronics sales office.
STD5N60DM2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
Gate-source voltage
±30
3.5
2
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
= 25 °C
case
case
I
A
D
= 100 °C
I
14
45
40
40
A
DM
P
T
o
tal dissipation at T
= 25 °C
case
W
TOT
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
V/ns
°C
T
stg
-55 to 150
T
Operating junction temperature range
j
1. Pulse
width is limited by safe operating area.
2.
3.
I
≤ 3.5 A, di/dt=400 A/μs; V
peak < V
, V
= 480 V.
(BR)DSS DD
SD
DS
V
≤ 480 V.
DS
Table 2.
Thermal data
Parameter
Symbol
Value
2.78
50
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-pcb
1. When
mounted on a 1-inch² FR-4, 2 Oz copper board.
°C/W
R
thj-pcb
Table 3.
Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Value
1
Unit
I
A
AR
E
132
mJ
AS
1. Pulse
width limited by T
.
jmax
2. Starting
T =
25 °C, I
= I
, V
= 50 V.
j
D
AR
DD
DS11742
–
Rev 3
page 2/18
STD5N60DM2
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified).
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
V
= 0
V
, I
= 1
m
A
600
V
(BR)DSS
GS
D
= 0
V
, V
=
6
00 V
1
GS
GS
DS
Zero gate voltage drain
current
I
µA
DSS
V
T
= 0
V
, V
=
6
00 V,
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
5
µA
V
GSS
DS
DS
V
V
V
= V
, I
= 250 µA
3
4
GS(th)
GS
D
Static drain-source on-
resistance
R
DS(on)
= 10
V
, I
=
1
.75 A
1.38
1.55
Ω
GS
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
214
12
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
oss
DS
GS
C
rss
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
3.5
21
= 0 to 480
V
, V
= 0 V
C
oss eq.
pF
Ω
DS
GS
R
G
f = 1 MHz, I
= 0 A
D
6.5
5.3
1.4
2.7
Q
g
V
= 480
V
, I
=
3
.5 A, V
= 0 to
D GS
DD
Q
gs
Gate-source charge
nC
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
7.2
Max.
Unit
t
Turn-on delay time
Rise time
–
–
–
–
–
–
–
–
d(on)
V
V
= 300
V
, I
=
1
.75 A R
= 4.7 Ω,
D G
DD
t
4.1
GS
r
ns
t
Turn-off delay time
Fall time
17
d(off)
t
19.8
f
DS11742
–
Rev 3
page 3/18
STD5N60DM2
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
3.5
14
Unit
A
I
Source-drain current
–
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
A
SDM
V
V
= 0
V
, I
=
3
.5 A
SD
1.6
70
V
GS
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
58
109
4
ns
nC
A
I
= 3.5 A, di/dt = 100 A/µs,
SD
V
DD
Q
rr
I
RRM
t
109
309
5
ns
nC
A
rr
I
= 3.5 A, di/dt = 100 A/µs,
SD
V
DD
j
Q
rr
I
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
DS11742
–
Rev 3
page 4/18
STD5N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GIPG270620160921SOA
I
D
(A)
in this area is
Operation
limited by R
DS(on)
10
1
t
p
=10 µs
t
p
=100 µs
10
0
T
j
≤
150 °C
T
c
= 25°C
single pulse
t
p
=1 ms
t
p
=10 ms
V
DS
(V)
10
-1
10
-1
10
0
10
1
10
2
10
3
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG270620160824OCH
GIPG270620160918TCH
I
D
I
D
(A)
(A)
V
GS
=8, 9, 10 V
6
6
V
DS
= 20 V
V
GS
=7 V
5
4
3
2
5
4
3
2
V
GS
=6 V
1
0
1
0
V
GS
=5 V
16
0
4
8
12
V
DS
(V)
0
2
4
6
8
V
GS
(V)
DS11742
–
Rev 3
page 5/18
STD5N60DM2
Electrical characteristics (curves)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GADG010620181431QVG
V
GS
(V)
V
DS
(V)
GIPG270620160822RID
R
DS(on)
(Ω)
V
DD
= 480 V
I
D
= 3.5 A
V
DS
1.5
1.46
1.42
1.38
1.34
20
16
12
8
500
400
300
200
100
V
GS
=10 V
Q
g
Q
gd
Q
gs
4
0
1.3
0
1.26
0
2
4
6
8
Q
g
(nC)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 I
D
(A)
Figure 7.
Capacitance variations
Figure 8.
Output capacitance stored energy
GADG010620181432CVR
C
(pF)
GIPG270620160920EOS
E
OSS
(µJ)
1.6
1.2
0.8
10
3
10
2
C
ISS
f = 1 MHz
10
1
10
0
C
OSS
C
RSS
0.4
0
10
-1
10
0
10
1
10
2
V
DS
(V)
0
100 200 300 400 500 600
V
DS
(V)
Figure 9.
Normalized gate threshold voltage vs
temperature
Figure 10.
Normalized on-resistance vs temperature
GIPG270620160822RON
R
DS(on)
(norm.)
GIPG270620160821VTH
V
GS(th)
(norm.)
2.2
1.1
V
GS
= 10 V
I
D
= 250 µA
1.8
1.4
1.0
1.0
0.9
0.8
0.6
0.2
0.7
0.6
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
DS11742
–
Rev 3
page 6/18
STD5N60DM2
Electrical characteristics (curves)
Figure 12.
Normalized V
(BR)DSS
vs temperature
Figure 11.
Source-drain diode forward characteristics
GIPG270620160823SDF
GIPG270620160822BDV
V
SD
(V)
V
(BR)DSS
(norm.)
T
j
= -50 °C
1.0
1.08
I
D
= 1 mA
0.9
1.04
1.00
0.96
T
j
= 25 °C
0.8
0.7
T
j
= 150 °C
0.6
0.92
0.88
0.5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 I
SD
(A)
-75
-25
25
75
125
T
j
(°C)
DS11742
–
Rev 3
page 7/18
STD5N60DM2
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
V
(BR)DSS
t
on
t
d(on)
t
off
t
d(off)
V
D
t
r
t
f
90%
90%
10%
I
DM
V
DS
10%
V
GS
0
0
I
D
90%
V
DD
V
DD
10%
AM01472v1
AM01473v1
DS11742
–
Rev 3
page 8/18
STD5N60DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS11742
–
Rev 3
page 9/18
STD5N60DM2
DPAK (TO-252) type A package information
4.1
DPAK (TO-252) type A package information
Figure 19.
DPAK (TO-252) type A package outline
0068772_A_25
DS11742
–
Rev 3
page 10/18
STD5N60DM2
DPAK (TO-252) type A package information
Table 8.
DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.286
4.572
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS11742
–
Rev 3
page 11/18
STD5N60DM2
DPAK (TO-252) type E package information
4.2
DPAK (TO-252) type E package information
Figure 20.
DPAK (TO-252) type E package outline
0068772_type-E_rev.25
DS11742
–
Rev 3
page 12/18
STD5N60DM2
DPAK (TO-252) type E package information
Table 9.
DPAK (TO-252) type E mechanical data
mm
Typ.
Dim.
Min.
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
A
A2
b
2.18
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
b4
c
c2
D
D1
E
6.73
E1
e
2.286
4.572
e1
H
9.94
1.50
10.34
1.78
L
L1
L2
L4
2.74
0.89
1.27
1.02
Figure 21.
DPAK (TO-252) type E recommended footprint (dimensions are in mm)
FP_0068772_25
DS11742
–
Rev 3
page 13/18
STD5N60DM2
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 22.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS11742
–
Rev 3
page 14/18
STD5N60DM2
DPAK (TO-252) packing information
Figure 23.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS11742
–
Rev 3
page 15/18
STD5N60DM2
Revision history
Table 11.
Document revision history
Date
Revision Changes
05-Jul-2016
1
First release.
Updated
Section 1: “Electrical ratings”.
17-May-2017
01-Jun-2018
2
Added
Section 4.2: “DPAK (TO-252) type C package information”.
Minor text changes.
3
DS11742
–
Rev 3
page 16/18
STD5N60DM2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
DPAK (TO-252) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
DPAK (TO-252) type E package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
DS11742
–
Rev 3
page 17/18
STD5N60DM2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS11742
–
Rev 3
page 18/18
