STMicroelectronics-STD5NM50T4
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STD5NM50
STD5NM50-1
N-CHANNEL 500V – 0.7
Ω
– 7.5A DPAK/IPAK
MDmesh™Power MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STD5NM50
STD5NM50-1
500V
500V
<0.8
Ω
<0.8
Ω
7.5 A
7.5 A
TYPICAL R
(on) = 0.7
Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
DS
3
3
2
1
1
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DPAK
TO-252
IPAK
TO-251
(Add Suffix “-1”)
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
500
±30
7.5
Unit
V
V
Drain-source Voltage (V
= 0)
DS
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
V
DGR
GS
V
GS
Gate- source Voltage
V
I
D
Drain Current (continuous) at T
= 25°C
A
C
I
D
Drain Current (continuous) at T
= 100°C
4.7
A
C
I
( )
Drain Current (pulsed)
30
A
DM
P
Total Dissipation at T
= 25°C
100
0.8
W
TOT
C
Derating Factor
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
Storage
T
e
mperature
15
T
stg
– 55 to 150
°C
T
Max. Operating Junction
T
e
mperature
j
(1) I
≤
5A, di/dt
≤
400A/
μ
s, V
≤
V
, T
≤
T
(BR)DSS j
JMAX.
SD
DD
(•)Pulse width limited by safe operating area
September 2002
1/10
STD5NM50/STD5NM50-1
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.25
100
300
°C/W
°C/W
°C
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
2.5
A
AR
(pulse width limited by T
max)
j
E
AS
Single Pulse Avalanche Energy
300
mJ
(starting T
= 25 °C, I
= I
, V
= 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS
(T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
T
y
p.
Max.
Unit
V
I
D
= 250
μ
A, V
= 0
500
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
μ
A
μ
A
nA
DSS
DS
Drain Current (V
= 0)
GS
= Max Rating, T
= 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V
= 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
T
y
p.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V
, I
= 250
μ
A
Gate Threshold Voltage
3
DS
GS
D
R
Static Drain-source On
Resistance
= 10
V
, I
=
2
.5A
0.7
0.8
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
T
y
p.
3.5
415
88
Max.
Unit
S
g
fs
(1)
V
= 25V
I =
2.5A
DS x,
D
C
C
V
= 25V, f = 1 MHz, V
= 0
DS GS
pF
pF
pF
iss
Output Capacitance
oss
C
rss
Reverse Transfer
Capacitance
12
C
(2) Equivalent
Output
Capacitance
V
= 0V, V
= 0V to 400V
50
3
pF
oss eq.
GS
DS
R
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
T
e
st Signal Level = 20mV
Open Drain
Ω
G
1. Pulsed:
Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0 to 80%
oss eq.
oss DS
.
DSS
2/10
STD5NM50/STD5NM50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250
V
, I
= 2.5A
Turn-on Delay Time
16
ns
d(on)
DD
D
= 4.7
Ω
V =
10V
G
GS
t
r
Rise Time
8
ns
(see test circuit, Figure 3)
Q
V
V
= 400
V
, I
= 7.5A
= 10V
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
13
5
nC
nC
nC
g
DD
D
GS
Q
gs
Q
6
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
14
6
Max.
Unit
ns
t
V
R
= 400
V
, I
= 5A,
r(Voff)
DD
D
= 4.7
Ω,
V =
10V
G
GS
t
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
13
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
7.5
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
30
A
SDM
V
I
I
= 7.5A, V
= 0
1.5
V
SD
SD
GS
t
= 5A, di/dt = 100A/
μ
s,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
185
1.1
ns
μ
C
A
rr
SD
V
= 100
V
, T
=
2
5°C
j
DD
Q
rr
(see test circuit, Figure 5)
I
11.5
RRM
t
Q
I
V
= 5A, di/dt = 100A/
μ
s,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
270
1.6
12
ns
μ
C
A
rr
SD
= 100
V
, T
=
1
50°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed:
Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse
width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/10
STD5NM50/STD5NM50-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD5NM50/STD5NM50-1
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
Source-drain Diode Forward Characteristics
5/10
STD5NM50/STD5NM50-1
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Fig. 4:
Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD5NM50/STD5NM50-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
TYP.
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0
o
1.00
8
o
0.024
0
o
0.039
0
o
P032P_B
7/10
STD5NM50/STD5NM50-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
2.2
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/10
STD5NM50/STD5NM50-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL D
A
TA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504
0.520
0.795
18.4 0.645
0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
T
A
PE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267
0.275
10.4 10.6
0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059
0.063
0.059
D1
E
1.65 1.85
0.065 0.073
7.4 7.6
0.291 0.299
2.55 2.75
0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153
0.161
8.1 0.311
0.319
2.1 0.075
0.082
1.574
W
15.7
16.3 0.618
0.641
* on sales type
9/10
STD5NM50/STD5NM50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore – Spain – Sweden – Switzerland – United Kingdom – United States.
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