STMicroelectronics-STD64N4F6AG
| Part # | STMicroelectronics-STD64N4F6AG |
Download  | STMicroelectronics-STD64N4F6AG |
STD64N4F6AG
Automotive-grade N-
channel 40 V, 7 mΩ typ., 54 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STD64N4F6AG 40
V
8.2 mΩ
54 A
60 W
•
Designed for automotive applications and
AEC-Q101 qualified
•
•
•
•
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Figure 1: Internal schematic diagram
Applications
•
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
Table 1: Device summary
Order code
Marking
Package
Packing
STD64N4F6AG
64N4F6
DPAK
Tape and reel
June 2015
DocID027883 Rev 1
1/15
This is information on a product in full production.
Contents
STD64N4F6AG
Contents
2/15
DocID027883 Rev 1
STD64N4F6AG
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
Parameter
Value
40
Unit
V
Drain-source voltage
V
GS
Gate-source voltage
±20
54
V
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
I
D
A
46
216
60
A
P
TOT
T
stg
T
j
Total dissipation at T
case
= 25 °C
Storage temperature
W
-55 to 175
°C
Operating junction temperature
Notes:
(1)
Current is limited by package.
(2)
Pulse width is limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Value
2.5
Unit
R
thj-case
°C/W
35
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Parameter
Symbol
Value
54
Unit
A
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
180
mJ
Notes:
(1)
Pulse width limited by T
jmax
(2)
starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 25 V.
.
DocID027883 Rev 1
3/15
Electrical characteristics
STD64N4F6AG
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, V
DS
= 40 V
40
V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 40 V,
T
case
= 125 °C
10
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±20 V
±100
4.5
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
Static drain-source on-
resistance
R
DS(on)
V
GS
= 10 V, I
D
= 27 A
7
8.2
mΩ
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
2415
232
–
–
C
oss
V
DS
= 25 V, f = 1 MHz,
pF
nC
V
GS
= 0 V
Reverse transfer
capacitance
C
rss
–
170
–
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
–
–
–
44
15
12
–
–
–
V
DD
= 20 V, I
D
= 54 A,
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Min. Typ. Max. Unit
V
DD
= 20 V, I
D
= 27 A
–
–
–
21.2
113
–
–
–
R
G
= 4.7
Ω, V
GS
= 10 V (see
ns
t
d(off)
Turn-off delay time
40.4
t
f
Fall time
–
25.2
–
4/15
DocID027883 Rev 1
STD64N4F6AG
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
I
SD
Parameter
Source-drain current
–
–
54
216
1.3
A
A
Source-drain current
(pulsed)
Forward on voltage
V
GS
= 0 V, I
SD
= 27 A
I
SD
= 54 A, di/dt = 100 A/µs,
–
–
–
V
t
rr
Reverse recovery time
Reverse recovery charge
29.4
31.3
ns
nC
V
Q
rr
I
RRM
Reverse recovery current
–
2.1
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027883 Rev 1
5/15
Electrical characteristics
STD64N4F6AG
2.1
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 7: Static drain-source on-resistance
Figure 6: Gate charge vs gate-source voltage
6/15
DocID027883 Rev 1
STD64N4F6AG
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 12: Source-drain diode forward characteristics
DocID027883 Rev 1
7/15
Test circuits
STD64N4F6AG
3
Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching
and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 18: Switching time waveform
Figure 17: Unclamped inductive waveform
8/15
DocID027883 Rev 1
STD64N4F6AG
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
DPAK (TO-252) type A package information
Figure 19: DPAK (TO-252) type A package outline
DocID027883 Rev 1
9/15
Package information
STD64N4F6AG
Table 9: DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.16
4.40
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.40
4.60
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.28
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
10/15
DocID027883 Rev 1
STD64N4F6AG
Package information
Figure 20: DPAK (TO-252) recommended footprint (dimensions are in mm)
DocID027883 Rev 1
11/15
Package information
STD64N4F6AG
4.2
DPAK (TO-252) packing information
Figure 21: DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
12/15
DocID027883 Rev 1
STD64N4F6AG
Package information
Figure 22: DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 10: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DocID027883 Rev 1
13/15
Revision history
STD64N4F6AG
5
Revision history
Table 11: Document revision history
Revision
Date
Changes
First release.
10-Jun-2015
1
14/15
DocID027883 Rev 1
STD64N4F6AG
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
DocID027883 Rev 1
15/15
