STMicroelectronics-STD7N60M2
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STD7N60M2, STP7N60M2,
STU7N60M2
N-channel 600
V
,
0
.86
Ω
typ., 5 A MDmesh II Plus™ low Q
g
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet
–
production data
Features
TAB
V
DS
T
Jmax
@
R
DS(on)
max
Order codes
I
D
3
1
STD7N60M2
STP7N60M2
STU7N60M2
DPAK
650 V
0.95
Ω
5 A
TAB
TAB
•
Extremely low gate charge
3
3
•
Lower R
DS(on)
x area vs previous generation
•
Low gate input resistance
•
100% avalanche tested
2
2
1
1
TO-220
IPAK
•
Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
•
Switching applications
Description
These devices are N-channel Power MOSFE
T
s
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFE
T
s
a
ssociate a
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STD7N60M2
STP7N60M2
STU7N60M2
DPAK
TO-220
IPAK
T
a
pe and reel
7N60M2
Tube
June 2013
DocID024622 Rev 1
1/21
This is information on a product in full production.
Contents
STD7N60M2, STP7N60M2, STU7N60M2
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
GS
I
D
Gate-source voltage
± 25
5
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
3.5
20
60
15
50
A
(1)
I
DM
A
P
TOT
dv/dt
(1)
dv/dt
(2)
T
stg
T
o
tal dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
W
V/ns
°C
Storage temperature
– 55 to 150
T
j
Max. operating junction temperature
1.
2.
I
≤
5 A, di/dt
≤
400 A/µs; V
< V
, V
=400 V
(BR)DSS DD
SD
DS peak
V
≤
480 V
DS
Table 3. Thermal data
Parameter
Value
Symbol
Unit
DPAK TO-220 IPAK
R
thj-case
Thermal resistance junction-case max
R
thj-pcb
Thermal resistance junction-pcb max
(1)
R
thj-amb
Thermal resistance junction-ambient max
2.08
50
2.08
°C/W
°C/W
62.5
100 °C/W
1. When
mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width
Symbol
Value
Unit
I
AR
1.5
A
limited by T
jmax
)
Single pulse avalanche energy (starting T
j
=25°C, I
D
= I
AR
;
E
AS
99
mJ
V
DD
=50)
DocID024622 Rev 1
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21
Electrical characteristics
STD7N60M2, STP7N60M2, STU7N60M2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
600
V
breakdown voltage
V
V
DS
= 600 V
DS
= 600 V, T
C
=125 °C
1
µA
µA
Zero gate voltage
I
DSS
drain current (V
GS
= 0)
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
= ± 25 V
10
4
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
Static drain-source
V
GS
= 10
V
,
I
D
= 2.5 A
on-resistance
0.86
0.95
Ω
Table 6. Dynamic
Symbol
Parameter
Input capacitance
Output capacitance
Test conditions
Min.
Typ.
271
Max. Unit
C
iss
–
–
–
–
pF
pF
V
V
DS
= 100 V, f = 1 MHz,
GS
= 0
C
oss
15.7
C
rss
Reverse transfer
capacitance
–
–
–
0.68
75.5
7.2
–
–
–
pF
pF
Ω
Equivalent output
capacitance
(1)
C
oss eq.
V
DS
= 0 to 480 V, V
GS
= 0
Intrinsic gate
resistance
R
G
f = 1 MHz open drain
DD
= 480
V
,
I
D
= 5 A,
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
8.8
1.8
4.3
–
nC
nC
nC
V
V
GS
= 10 V
–
–
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
Table 7. Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
7.6
7.2
–
–
–
–
ns
ns
ns
ns
V
DD
= 300 V, I
D
= 2.5 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off delay time
Fall time
19.3
15.9
4/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Electrical characteristics
Min. Typ. Max.
Unit
Table 8. Source drain diode
Test conditions
Symbol
Parameter
I
SD
Source-drain current
5
A
A
–
(1)
I
SDM
Source-drain current (pulsed)
20
(2)
V
SD
Forward on voltage
I
SD
= 5 A, V
GS
= 0
–
–
–
–
–
–
–
1.6
V
ns
nC
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
275
1.55
11
I
SD
= 5 A, di/dt = 100 A/µs
V
I
RRM
t
rr
376
2.1
11
ns
nC
A
I
SD
= 5 A, di/dt = 100 A/µs
DD
= 60
V
, T
j
= 150 °C
Q
rr
V
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID024622 Rev 1
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21
Electrical characteristics
STD7N60M2, STP7N60M2, STU7N60M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
Figure 3. Thermal impedance for DPAK and
IPAK
IPAK
AM15887v1
I
D
(A)
10
10µs
100µs
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 4. Safe operating area for TO-220
Figure 5. Thermal impedance for TO-220
AM15814v1
I
D
(A)
10
10µs
100µs
1ms
1
0.1
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7. Transfer characteristics
AM15815v1
AM15816v1
I
D
(A)
I
D
(A)
9
V
GS
=7, 8, 9, 10, 11V
9
V
DS
=19V
6V
5V
8
7
6
8
7
6
5
4
3
2
5
4
3
2
1
0
0
1
0
4V
3V
V
5
2
20
DS
(V)
8
10
10
15
0
4
6
V
GS
(V)
6/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
AM15824v1
AM15817v1
V
(V)
GS
R
DS
(
(
o
Ω
n
)
)
V
DS
(V)
V
DD
=480V
=5A
I
D
0.910
0.900
0.890
0.880
0.870
0.860
0.850
V
GS
=10V
12
V
DS
500
10
8
400
300
200
100
6
4
2
0
0.840
0.830
0
(nC)
3
4
5
4
8
10
1
2
Q
g
I
D
(A)
0
2
6
0
Figure 10.
Capacitance variations
Figure 11. Output capacitance stored energy
AM15818v1
AM15819v1
C
(pF)
E
oss
(µJ)
1000
100
10
Ciss
2
Coss
Crss
1
1
0.1
0.1
0
0
100
1
10
V
DS
(V)
100 200 300 400 500 600
V
DS
(V)
Figure 12. Normalized gate threshold voltage
vs. temperature
Figure 13. Normalized on-resistance vs.
temperature
AM15718v1
AM15821v1
V
GS(th)
R
DS(on)
(norm)
(norm)
I
D
=2.5 A
1.1
1.0
0.9
0.8
I
D
=250µA
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.7
0.6
100
-50
-50
0
50
T
J
(°C)
-25
0
50 75
T
J
(°C)
25
100
DocID024622 Rev 1
7/21
21
Electrical characteristics
STD7N60M2, STP7N60M2, STU7N60M2
Figure 14. Drain-source diode forward
characteristics
Figure 15. Normalized V
DS
vs. temperature
AM15822v1
AM15823v1
V
V
DS
(
S
V
D
)
(norm)
1.11
1.4
I
D
= 1mA
1.09
1.07
1.05
1.2
T
J
=-50°C
1
0.8
0.6
0.4
1.03
1.01
0.99
0.97
0.95
0.93
T
J
=25°C
T
J
=150°C
0.2
0
0
5
-50
0
1
2
3
4
I
SD
(A)
-25
25 50
75
T
J
(°C)
100
8/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
t
on
t
off
td
off
9
ꢅ%5ꢆ’66
t
r
t
f
td
on
9
‘
90%
10%
90%
,
‘0
10%
V
GS
V
DS
,
‘
0
0
9
”
9
”
90%
10%
$0ꢀꢁꢂꢃꢄYꢁ
AM01473v1
DocID024622 Rev 1
9/21
21
Package mechanical data
STD7N60M2, STP7N60M2, STU7N60M2
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Package mechanical data
Table 9. DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1.00
4.60
10.10
1.50
L
(L1)
L2
L4
R
2.80
0.80
0.60
0°
1.00
8°
0.20
V2
DocID024622 Rev 1
11/21
21
Package mechanical data
STD7N60M2, STP7N60M2, STU7N60M2
Figure 22. DPAK (TO-252) drawing
0068772_K
12/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Package mechanical data
Figure 23. DPAK footprint
(a)
Footprint_REV_K
a. All
dimensions are in millimeters
DocID024622 Rev 1
13/21
21
Package mechanical data
STD7N60M2, STP7N60M2, STU7N60M2
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
14/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Package mechanical data
Figure 24. TO-220 type A drawing
ꢀꢀꢁꢇꢈꢉꢉBWSH$B5HYB7
DocID024622 Rev 1
15/21
21
Package mechanical data
STD7N60M2, STP7N60M2, STU7N60M2
Table 11. IPAK (TO-251) mechanical data
mm.
typ.
DIM
min.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
16/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Package mechanical data
Figure 25. IPAK (TO-251) drawing
0068771_K
DocID024622 Rev 1
17/21
21
Packaging mechanical data
STD7N60M2, STP7N60M2, STU7N60M2
5
Packaging mechanical data
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
18/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
Packaging mechanical data
Figure 26. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 27. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl
ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID024622 Rev 1
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21
Revision history
STD7N60M2, STP7N60M2, STU7N60M2
6
Revision history
Table 13. Document revision history
Changes
Date
Revision
06-Jun-2013
1
First release.
20/21
DocID024622 Rev 1
STD7N60M2, STP7N60M2, STU7N60M2
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