STMicroelectronics-STD7NM60N
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STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600
V
, 5
A
, 0.84
Ω
, D
P
A
K, TO-220F
P
,
T
O-220, I
P
A
K
second generation MDmesh™ Power MOSFET
Features
V
DSS @
T
Jmax
R
DS(on)
max.
Order codes
I
D
3
2
3
2
1
1
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
TO-220
I
P
A
K
650 V
< 0.9
Ω
5 A
3
■
100% avalanche tested
1
3
2
1
■
Low input capacitance and gate charge
■
Low gate input resistance
D
P
A
K
TO-220FP
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
$ꢅꢆꢇ
These devices are N-channel Power MOSFETs
realized using the second generation of
TM
MDmesh technolog
y
.
I
t applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
‘ꢅꢁꢇ
capability and excellent avalanche characteristics.
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
D
P
A
K
Packaging
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
T
a
pe and reel
T
u
be
TO-220FP
TO-220
I
P
A
K
7NM60N
T
u
be
T
u
be
November 2010
Doc ID 16472 Rev 4
1/17
17
Contents
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220, I
P
A
K,
Parameter
Unit
TO-220FP
D
P
A
K
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
600
25
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
5
3
5
(1)
3
(1)
20
(1)
20
A
A
I
D
(2)
I
DM
20
45
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
dv/dt
(3)
Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
j
Storage temperature
– 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
5 A, di/dt
≤
400 A/µs, V
Peak
< V
(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
D
P
A
K I
P
A
K TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
R
thj-pcb
Thermal resistance junction-pcb max
2.78
100
6.25
°C/W
°C/W
°C/W
62.5
50
Maximum lead temperature for soldering
purpose
T
l
300
°C
Table 4.
Symbol
Thermal data
Parameter
Value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
I
AR
2
A
Single pulse avalanche energy
E
AS
119
mJ
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 16472 Rev 4
3/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
2
Electrical characteristics
(T =
25 °C unless otherwise specified)
C
Table 5.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
DS
= Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
600
V
Zero gate voltage
V
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= Max rating, T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
20 V
100
4
nA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on
2
3
V
GS
= 10
V
,
I
D
= 2.5 A
0.84
0.9
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
C
iss
C
oss
C
rss
363
24.6
1.1
pF
V
DS
= 50
V
, f = 1
M
Hz,
V
GS
= 0
Output capacitance
–
–
pF
pF
Reverse transfer
capacitance
Output equivalent
capacitance
(1)
C
oss eq.
V
DS
= 0 to 480
V
,
V
GS
= 0
f = 1 MHz open drain
–
–
130
5.4
–
–
pF
Intrinsic gate
resistance
R
G
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480
V
,
I
D
= 5 A,
V
GS
= 10 V
14
2.7
7.7
nC
nC
nC
–
–
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
.
4/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
7
ns
V
DD
= 300
V
,
I
D
= 2.5 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
10
ns
–
–
T
u
rn-off-delay time
Fall time
26
ns
12
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
5
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
20
(2)
V
SD
Forward on voltage
I
SD
= 5 A, V
GS
= 0
1.3
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
213
1.5
14
ns
nC
A
I
SD
= 5 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 5 A, di/dt = 100 A/µs
V
DD
= 60
V
,
T
j
= 150 °C
265
1.8
14
ns
nC
A
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16472 Rev 4
5/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
for D
P
A
K, I
P
A
K Figure 3.
Thermal impedance for D
P
A
K, I
P
A
K
Thermal impedance for TO-220FP
Thermal impedance for TO-220
AM06474v1
100
10
10
µs
I
D
(A)
100
µs
1
1m
s
Tj=150°C
Tc=25°C
10m
s
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area
for TO-220FP
Figure 5.
AM06475v1
100
10
10
µs
100
µs
1m
s
1
I
D
(A)
10m
s
Tj=150°C
Tc=25°C
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220
Figure 7.
AM06476v1
100
10
I
D
(A)
10
µs
1
100
µs
1m
s
Tj=150°C
Tc=25°C
10m
s
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
6/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM06477v1
AM0647
8
v1
10
I
D
(A)
9
V
G
S
=10V
V
D
S
=20V
9
8
7
6V
8
7
6
5
4
6
5
I
D
(A)
4
5V
3
3
2
2
1
0
0
1
0
0
2
20
40
V
D
S
(V)
8
10
V
G
S
(V)
10
4
6
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Static drain-source on resistance
AM06479v1
AM064
8
0v1
V
D
S
(V)
V
(V)
G
S
R
D
S
(on)
(
Ohm
)
V
DD
=4
8
0V
=5A
V
G
S
=10V
V
G
S
0.
88
12
I
D
500
V
D
S
0.
8
6
0.
8
4
0.
8
2
10
8
400
3
00
200
6
0.
8
0
4
2
0
0.7
8
0.76
0.74
100
0
2
3
4
5
1
6
12
14 16
Q
g
(nC)
I
D
(A)
10
0
2
4
8
0
Figure 12.
Capacitance variations
Figure 13.
Output capacitance stored energy
AM064
8
1v1
AM064
8
2v1
C
E
o
ss
(pF)
(
µ
J)
2.5
1000
100
2.0
1.5
1.0
Ci
ss
Co
ss
Cr
ss
10
1
0.5
0
0.1
100
200
400 500
600
1
10
V
D
S
(V)
0
100
3
00
V
D
S
(V)
Doc ID 16472 Rev 4
7/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
AM064
83
v1
AM064
8
4v1
V
G
S
(th)
(norm)
R
D
S
(on)
(norm)
I
D
=2.5A
2.1
1.10
I
D
=250
µ
A
1.9
1.00
0.90
1.7
1.5
1.
3
1.1
0.9
0.
8
0
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50
75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 16.
Normalized B
vs temperature
VDSS
AM064
8
5v1
BV
D
SS
(norm)
I
D
=1mA
1.07
1.05
1.0
3
1.01
0.99
0.97
0.95
0.9
3
-50
-25
0
25 50 75
T
J
(°C)
100
8/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 16472 Rev 4
9/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 23.
TO-220FP drawing mechanical data
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_K
Doc ID 16472 Rev 4
11/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
2.20
0.
9
0
0.64
typ
max.
2.40
1.10
0.
9
0
0.
9
5
5.40
0.60
0.60
6.20
6.60
A
A1
b
b
2
b
4
c
5.20
0.45
0.4
8
6.00
6.40
c2
D
E
e
2.2
8
e1
H
4.40
4.60
16.10
L
9
.00
0.
8
0
9
.40
(L1)
L2
V1
1.20
0.
8
0
10
o
006
8
771_H
12/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.
9
0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
max.
2.40
1.10
0.2
3
0.
9
0
5.40
0.60
0.60
6.20
A
A1
A2
b
b
4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.2
8
e1
H
4.40
9
.
3
5
1
4.60
10.10
L
L1
L2
L4
R
2.
8
0
0.
8
0
0.60
0
o
1
0.20
8
o
V2
006
8
772_G
Doc ID 16472 Rev 4
13/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
b
1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
2
8
.
9
0
3
.75
3
.
8
5
2.
9
5
2.65
0015
988
_Rev_S
14/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504
0.520
0.795
18.4 0.645
0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267
0.275
10.4 10.6
0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059
0.063
0.059
D1
E
1.65 1.85
0.065 0.073
7.4 7.6
0.291 0.299
2.55 2.75
0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153
0.161
8.1 0.311
0.319
2.1 0.075
0.082
1.574
W
15.7
16.3 0.618
0.641
Doc ID 16472 Rev 4
15/17
Revision history
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
6
Revision history
Table 10.
Document revision history
Date
Revision
Changes
29-Oct-2009
19-Jul-2010
11-Oct-2010
04-Nov-2010
1
2
3
4
First release.
Changed R
DS(on)
typical value.
16/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
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