STMicroelectronics-STD80N3LL
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STD80N3LL
N-
channel 30 V, 4 mΩ typ., 80 A
Power MOSFET in a DPAK package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STD80N3LL
30 V
5.2 mΩ
80 A
75 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Figure 1: Internal schematic diagram
Applications
Switching applications
D(2, TAB)
Description
This device is an N-channel Power MOSFET with
very low R
DS(on)
in all packages.
G(1)
S(3)
AM01475v1
_
T
a
b
Table 1: Device summary
Order code
Marking
80N3LL
Package
Packaging
STD80N3LL
DPAK
Tape and reel
December 2016
DocID029591 Rev 2
1/15
This is information on a product in full production.
Contents
STD80N3LL
Contents
2/15
DocID029591 Rev 2
STD80N3LL
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
30
Unit
V
V
DS
V
GS
Drain-source voltage
Gate-source voltage
±20
80
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
60
A
T
j
320
75
A
Total dissipation at T
C
= 25 °C
Operating junction temperature range
Storage temperature range
W
-55 to 175
°C
T
stg
Notes:
(1)
This value is limited by package
(2)
Pulse width limited by safe operating area
Table 3: Thermal data
Parameter
Symbol
Value
50
Unit
Thermal resistance junction-pcb max.
Thermal resistance junction-case max.
°C/W
°C/W
R
thj-case
2
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2oz Cu
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Electrical characteristics
STD80N3LL
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
30
V
Zero gate voltage
V
GS
= 0 V
I
DSS
1
µA
drain current
V
DS
= 30 V
Gate-body leakage
I
GSS
V
GS
= 20 V, V
DS
= 0 V
100
nA
current
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
1
2.5
5.2
6.5
V
4
mΩ
mΩ
Static drain-source
on-resistance
5.5
Table 5: Dynamic
Symbol
C
iss
Parameter
Input capacitance
Test conditions
Min. Typ. Max. Unit
–
–
–
–
–
1640
207
160
18
–
–
–
–
–
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
C
oss
C
rss
Output capacitance
Reverse transfer capacitance
Total gate charge
pF
nC
Q
g
V
DD
= 15 V, I
D
= 80 A,
Q
gs
Gate-source charge
5.3
Q
gd
Gate-drain charge
–
8.8
–
Table 6: Switching times
Symbol
Parameter
Turn-on delay time
Test conditions
Min. Typ. Max. Unit
6.4
8
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
ns
ns
ns
ns
V
DD
= 15 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Rise time
36
12
Turn-off delay time
Fall time
Table 7: Source-drain diode
Test conditions
Symbol
Parameter
Forward on voltage
Min. Typ. Max. Unit
I
SD
= 80 A, V
GS
= 0 V
–
–
–
1.2
V
t
rr
Reverse recovery time
Reverse recovery charge
I
D
= 80 A, di/dt = 100 A/µs
21
14
ns
nC
Q
rr
I
RRM
Reverse recovery current
–
1.3
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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STD80N3LL
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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5/15
Electrical characteristics
Figure 8: Capacitance variations
STD80N3LL
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
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STD80N3LL
Test circuits
3
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
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Package information
STD80N3LL
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
8/15
DocID029591 Rev 2
STD80N3LL
Package information
4.1
DPAK package information
Figure 19: DPAK (TO-252) type A2 package outline
0068772_type-A2_rev21
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Package information
STD80N3LL
Table 8: DPAK (TO-252) type A2 mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
5.10
2.16
4.40
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
A
A1
A2
b
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
5.30
2.40
4.60
10.10
1.50
3.00
0.95
1.00
b4
c
c2
D
D1
E
5.10
E1
e
5.20
2.28
e1
H
L
L1
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
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STD80N3LL
Package information
Figure 20: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
DocID029591 Rev 2
11/15
Package information
STD80N3LL
4.2
DPAK (TO-252) packing information
Figure 21: DPAK (TO-252) tape outline
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STD80N3LL
Package information
Figure 22: DPAK (TO-252) reel outline
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DocID029591 Rev 2
13/15
Revision history
STD80N3LL
5
Revision history
Table 10: Document revision history
Changes
Date
Revision
26-Jul-2016
1
First release.
Document status promoted from preliminary to production data.
06-Dec-2016
2
Minor text changes.
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STD80N3LL
IMPORTANT NOTICE
–
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