STMicroelectronics-STD9NM60N
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STD9NM60N, STF9NM60N, STP9NM60N
Datasheet
N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFE
T
s
i
n
DPAK, TO-220FP and TO-220 packages
Features
TAB
3
2
1
DPAK
V
R
max.
I
D
Order code
STD9NM60N
STF9NM60N
STP9NM60N
Package
DPAK
DS
DS(on)
TAB
600 V
0.745 Ω
6.5 A
TO-220FP
TO-220
3
3
2
2
1
1
TO-220
TO-220FP
•
•
•
100% avalanche tested
D(2, TAB)
Low input capacitance and gate charge
Low gate input resistance
Applications
G(1)
•
Switching applications
S(3)
Description
AM01475v1_noZen
These devices are N-channel Power MOSFE
T
s
d
eveloped using the second
generation of MDmesh™ technology. These revolutionary Power MOSFE
T
s
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.
Product status link
DS6986
–
Rev 2
–
September 2018
For further information contact your local STMicroelectronics sales office.
STD9NM60N, STF9NM60N, STP9NM60N
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK, TO-220
TO-220FP
V
V
Drain-source voltage
600
±25
V
V
DS
Gate-source voltage
GS
I
Drain current (continuous) at T
= 25 °C
6.5
4
A
D
D
C
I
Drain current (continuous) at T
= 100 °C
A
C
25
I
Drain current (pulsed)
26
70
A
DM
P
T
o
tal dissipation at T
= 25 °C
W
V/ns
TOT
C
Peak diode recovery voltage slope
15
Insulation withstand voltage (RMS) from all three
V
2.5
kV
°C
ISO
leads to external heat sink (t = 1 s; T
= 25 °C)
c
T
Operating junction temperature range
Storage temperature range
j
-55 to 150
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤ 6.5 A, di/dt ≤ 400 A/μs,, V
= 80% V
.
(BR)DSS
SD
DD
Table 2.
Thermal data
Value
Symbol
Parameter
Unit
DPAK
TO-220
TO-220FP
R
thj-case
Thermal resistance junction-case
1.79
5
R
Thermal resistance junction-ambient
Thermal resistance junction-pcb
62.5
°C/W
thj-amb
R
thj-pcb
50
1. When
mounted on 1inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Parameter
Symbol
Value
2.5
Unit
A
I
Avalanche current, repetitive or not-repetitive (pulse width limited by T
Max)
AR
j
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
115
mJ
AS
j
D
AR
DD
DS6986
–
Rev 2
page 2/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
I =
1 mA, V
= 0 V
D GS
600
V
(BR)DSS
V
V
= 0
V
, V
=
6
00 V
1
µA
µA
GS
DS
Zero gate voltage drain
current
I
I
DSS
100
GS
DS
C
Gate body leakage
current
V
DS
V
DS
V
GS
= 0
V
, V
=
±
20 V
100
4
nA
V
GSS
GS
V
R
= V
, I
= 250 µA
Gate threshold voltage
2
3
GS(th)
GS
D
Static drain-source on
resistance
= 10
V
, I
=
3
.25 A
0.63
0.745
Ω
DS(on)
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Output capacitance
Min.
Typ.
452
30
Max.
Unit
C
iss
C
oss
V
V
= 50 V, f = 1 MHz, V
= 0 V
–
–
pF
DS
GS
Reverse transfer
capacitance
C
rss
1.45
79
Equivalent output
capacitance
= 0 to 480
V
, V
= 0 V
C
oss eq.
–
–
–
–
pF
Ω
DS
GS
R
g
f = 1 MHz, I
= 0 A
D
Gate input resistance
T
o
tal gate charge
4.8
17.4
3
Q
g
V
= 480 V, I
= 6.5 A, V
= 0 to 10 V
D GS
DD
Q
Gate-source charge
Gate-drain charge
–
–
nC
gs
Q
9.7
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
28
Max.
Unit
t
Turn-on delay time
Rise time
V
R
= 480
V
, I
=
6
.5 A,
d(on)
DD
D
= 4.7 Ω, V
= 10 V
t
23
G
GS
r
–
–
ns
t
Turn-off delay time
Fall time
52.5
26.7
d(off)
t
f
DS6986
–
Rev 2
page 3/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
Source-drain current
6.5
SD
–
–
A
Source-drain current
(pulsed)
I
26
SDM
V
I
I
= 6.5 A, V
= 0 V
GS
Forward on voltage
1.6
V
ns
μC
A
SD
SD
t
rr
= 6.5 A, di/dt = 100 A/µs
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
264
1.9
SD
V
Q
DD
–
–
rr
I
14.6
324
2.3
RRM
t
I
= 6.5 A, di/dt = 100 A/µs
SD
ns
μC
A
rr
V
Q
rr
DD
I
14.2
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 μs, duty cycle 1.5%.
DS6986
–
Rev 2
page 4/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1.
Safe operating area for DPAK
Figure 2.
Thermal impedance for DPAK
GC20460
K
10
0
10
-1
10
-1
10
-2
10
-1
10
-2
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
GC20940
K
10
-1
10
-2
10
-1
10
-2
10
-3
10
-1
10
2
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
Figure 5.
Safe operating area for TO-220
Figure 6.
Thermal impedance for TO-220
AM
0
8162v1
I
D
(A)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
10
-1
10
-2
S
i
n
g
l
e
p
u
l
s
e
10
-1
10
2
D
S
(V)
DS6986
–
Rev 2
page 5/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves
Figure 7.
Output characterisics
Figure 8.
Transfer characteristics
AM
0
8165v1
AM
0
8166v1
I
D
I
D
(A)
(A)
V
GS
=10V
V
D
S
=20V
12
12
10
10
8
6V
8
6
4
6
4
5V
2
0
2
0
5
2
20
25
V
D
S
(V)
8
10
V
GS
(V)
0
10
15
30
0
4
6
Figure 9.
Gate charge vs gate-source voltage
Figure 10.
Static drain-source on resistance
AM
0
8168v1
AM
0
8167v1
V
DS
V
GS
R
D
S
(
on)
(Ω)
V
DS
V
DD
=480V
V
GS
=10V
0.66
12
10
8
500
400
300
I
D
=6.5A
0.65
0.64
0.63
0.62
6
200
100
0
4
2
0
0.61
0.60
0.59
2
3
5
6
1
4
10
0
5
15
Q
g
0
I
D
(A)
Figure 11.
Capacitance variations
Figure 12.
Output capacitance stored energy
AM
0
8169v1
AM08170v1
C
(pF)
E
oss
(µJ)
3.5
1000
3
I
D
=250μA
C
i
s
s
2.5
2
100
1.5
1
Coss
Crss
10
1
0.5
0
0
200
400 500
600 V
DS
(V)
100
300
0.1
100
1
10
V
D
S
(V)
DS6986
–
Rev 2
page 6/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves
Figure 13.
Normalized gate threshold voltage vs
temperature
Figure 14.
Normalized on resistance vs temperature
AM
0
8172v1
R
D
S
(
on)
(norm)
AM
0
8171v1
V
GS(th)
(norm)
2.1
1.9
1.7
1.10
I
D
=3.25A
I
D
=250µA
1.00
0.90
1.5
3
0.9
0.5
0.80
0.70
-50
T
J
(°C)
0
-50
-25
0
25 50 75
T
J
(°C)
100
Figure 15.
Normalized V
(BR)DSS
vs temperature
AM
0
8173v1
(BR)DSS
V
(norm)
I
D
=1mA
1.03
1.01
0.99
0.97
0.95
0.93
-50
-25
0
25 50 75
T
J
(°C)
100
DS6986
–
Rev 2
page 7/24
STD9NM60N, STF9NM60N, STP9NM60N
Test circuits
3
Test circuits
Figure 16.
Test circuit for resistive load switching times
Figure 17.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 18.
Test circuit for inductive load switching and
diode recovery times
Figure 19.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 21.
Switching time waveform
Figure 20.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS6986
–
Rev 2
page 8/24
STD9NM60N, STF9NM60N, STP9NM60N
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS6986
–
Rev 2
page 9/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type A package information
4.1
DPAK (TO-252) type A package information
Figure 22.
DPAK (TO-252) type A package outline
0068772_A_25
DS6986
–
Rev 2
page 10/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type A package information
Table 8.
DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.286
4.572
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS6986
–
Rev 2
page 11/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information
4.2
DPAK (TO-252) type C2 package information
Figure 23.
DPAK (TO-252) type C2 package outline
0068772_C2_25
DS6986
–
Rev 2
page 12/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information
Table 9.
DPAK (TO-252) type C2 mechanical data
mm
Typ.
2.30
1.01
Dim.
Min.
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.10
6.50
5.20
2.186
9.80
1.40
Max.
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
5.60
6.70
5.50
2.386
10.40
1.70
A
A1
A2
b
b4
c
5.33
c2
D
6.10
6.60
D1
E
E1
e
2.286
10.10
H
L
1.50
L1
L2
L3
L4
L6
θ1
θ2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DS6986
–
Rev 2
page 13/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information
Figure 24.
DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS6986
–
Rev 2
page 14/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 25.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS6986
–
Rev 2
page 15/24
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) packing information
Figure 26.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS6986
–
Rev 2
page 16/24
STD9NM60N, STF9NM60N, STP9NM60N
TO-220FP package information
4.4
TO-220FP package information
Figure 27.
TO-220FP package outline
7012510_Rev_12_B
DS6986
–
Rev 2
page 17/24
STD9NM60N, STF9NM60N, STP9NM60N
TO-220FP package information
Table 11.
TO-220FP package mechanical data
mm
Typ.
Dim.
Min.
4.4
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DS6986
–
Rev 2
page 18/24
STD9NM60N, STF9NM60N, STP9NM60N
TO-220 type A package information
4.5
TO-220 type A package information
Figure 28.
TO-220 type A package outline
0015988_typeA_Rev_21
DS6986
–
Rev 2
page 19/24
STD9NM60N, STF9NM60N, STP9NM60N
TO-220 type A package information
Table 12.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS6986
–
Rev 2
page 20/24
STD9NM60N, STF9NM60N, STP9NM60N
Ordering information
5
Ordering information
Table 13.
Order codes
Order code
STD9NM60N
STF9NM60N
STP9NM60N
Marking
Package
Packing
DPAK
TO-220FP
TO-220
T
a
pe and reel
9NM60N
Tube
DS6986
–
Rev 2
page 21/24
STD9NM60N, STF9NM60N, STP9NM60N
Revision history
Table 14.
Document revision history
Date
Version
Changes
20-Oct-2010
1
First release.
Removed maturity status indication from cover page. The document status is
production data.
25-Sep-2018
2
Minor text changes.
DS6986
–
Rev 2
page 22/24
STD9NM60N, STF9NM60N, STP9NM60N
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics curves
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
DPAK (TO-252) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
DPAK (TO-252) type C2 package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
14
TO-220FP package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
16
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
18
Ordering information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22
DS6986
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Rev 2
page 23/24
STD9NM60N, STF9NM60N, STP9NM60N
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS6986
–
Rev 2
page 24/24
