STMicroelectronics-STF10NM50N
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STD10NM50N
STF10NM50N, STP10NM50N
N-channel 500
V
,
0
.53
Ω
, 7 A D
P
A
K, TO-220F
P
,
T
O-220
MDmesh™ II Power MOSFET
Features
TAB
V
DSS
(@Tjmax)
R
DS(on)
max
Type
I
D
3
1
3
2
STD10NM50N
STF10NM50N
STP10NM50N
1
DPAK
TO-220FP
550 V
< 0.63
Ω
7 A
TAB
■
100% avalanche tested
3
■
Low input capacitance and gate charge
■
Low gate input resistance
2
1
TO-220
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$ꢅꢆꢇ
4
!
“ꢈ
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technolog
y
.
T
his revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
‘ꢅꢁꢈ
3ꢅꢉꢈ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Packages
D
P
A
K
Packaging
STD10NM50N
STF10NM50N
STP10NM50N
T
a
pe and reel
T
u
be
10NM50N
TO-220FP
TO-220
October 2011
Doc ID 16929 Rev 3
1/18
18
Contents
STD10NM50N, STF10NM50N, STP10NM50N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
D
P
A
K, TO-220
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage
500
25
V
V
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
7
5
7
(1)
5
(1)
28
(1)
25
A
I
D
A
(2)
I
DM
28
70
A
P
TOT
V
ISO
T
o
tal dissipation at T
C
= 25 °C
W
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500
V
dv/dt
(3)
T
stg
Peak diode recovery voltage slope
Storage temperature
15
V/ns
°C
– 55 to 150
150
T
j
Max. operating junction temperature
°C
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area
3. I
SD
≤
7 A, di/dt
≤
400 A/µs, V
DD
= 80% V
(BR)DSS
, V
DSpeak
≤
V
(BR)DSS
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
D
P
A
K TO-220
TO-220FP
1.79
R
thj-case
Thermal resistance junction-case max
5
°C/W
°C/W
°C/W
°C
Thermal resistance junction-pcb minimum
footprint
(1)
R
thj-pcb
R
thj-amb
T
l
50
Thermal resistance junction-ambient max
62.5
300
Maximum lead temperature for soldering
purpose
1. When
mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
I
AR
2
A
Single pulse avalanche energy
E
AS
143
mJ
(starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 16929 Rev 3
3/18
Electrical characteristics
STD10NM50N, STF10NM50N, STP10NM50N
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max.
Unit
Drain-source
V
(BR)DSS
I
D
= 1 mA
500
V
breakdown voltage
(V
GS
= 0)
Zero gate voltage
V
DS
= 500 V
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 500
V
,
T
C
= 125 °C
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
=
25 V
0.1
4
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 3.5 A
2
3
Static drain-source on
resistance
R
DS(on)
0.53 0.63
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
Input capacitance
C
iss
C
oss
C
rss
450
38
pF
pF
pF
V
DS
= 50
V
, f = 1
M
Hz,
V
GS
= 0
Output capacitance
–
–
Reverse transfer
capacitance
1.3
Equivalent output
catacitance
(1)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 400 V
–
–
167
–
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400
V
,
I
D
= 7 A,
V
GS
= 10
V
,
17
3.3
8.5
nC
nC
nC
f=1 MHz Gate DC Bias=0
T
e
st signal level=20 mV
open drain
R
g
Gate input resistance
–
4.7
–
Ω
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
.
4/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Electrical characteristics
Min. Typ. Max.
Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
7.8
4.4
7.8
12
ns
ns
ns
ns
V
DD
= 250
V
,
I
D
= 3.5 A
R
G
= 4.7
Ω
V
GS
= 10 V
–
–
T
u
rn-off delay time
Fall time
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
I
SD
Source-drain current
7
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
28
(2)
V
SD
Forward on voltage
I
SD
= 7 A, V
GS
= 0
1.3
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 7 A, di/dt = 100 A/µs
V
DD
= 60 V
177
1.4
16
ns
µC
A
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 7 A, di/dt = 100 A/µs
V
DD
= 60
V
,
T
j
= 150 °C
216
1.7
ns
µC
A
Q
rr
I
RRM
15.4
1. Pulse
width limited by safe operating area
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16929 Rev 3
5/18
Electrical characteristics
STD10NM50N, STF10NM50N, STP10NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
for D
P
A
K
Figure 3.
Thermal impedance for D
P
A
K
Thermal impedance for TO-220FP
Thermal impedance for TO-220
AM0
8
150v1
I
D
(A)
10
µs
10
100
µs
1
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
AM0
8
151v1
I
D
(A)
10
µs
10
100
µs
1
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area
for TO-220
Figure 7.
AM0
8
149v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
6/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM0
8
152v1
AM0
8
15
3
v1
I
D
(A)
I
D
(A)
12
10
V
D
S
=20V
V
G
S
=10V
12
6V
10
8
6
4
8
6
4
5V
2
0
2
0
5
2
20
25
3
0
V
D
S
(V)
8
10 V
G
S
(V)
0
10
15
0
4
6
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Static drain-source on resistance
AM0
8
155v1
AM0
8
154v1
V
(V)
G
S
R
D
S
(on)
(
Ω
)
450
400
3
50
3
00
250
V
D
S
V
G
S
=10V
V
DD
=400V
=7A
12
I
D
0.55
0.54
0.5
3
0.52
0.51
0.50
10
8
200
150
100
6
4
2
0
50
0
4
6
2
10
20
25
Q
g
(nC)
I
D
(A)
0
5
15
0
Figure 12.
Capacitance variations
Figure 13.
Output capacitance stored energy
AM0
8
156v1
AM0
8
157v1
C
E
o
ss
(pF)
(
µ
J)
16
1000
100
14
12
Ci
ss
10
8
Co
ss
Cr
ss
6
10
1
4
2
0
0
0.1
100
200
400 500
600
1
10
V
D
S
(V)
100
3
00
V
D
S
(V)
Doc ID 16929 Rev 3
7/18
Electrical characteristics
STD10NM50N, STF10NM50N, STP10NM50N
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
AM0
8
15
8
v1
AM0
8
159v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
1.10
1.00
0.90
I
D
=250
µ
A
2.1
1.9
1.7
1.5
1.
3
1.1
0.9
I
D
=
3
.5 A
0.
8
0
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 16.
Normalized B
vs temperature
VDSS
AM0902
8
v1
V
D
S
(norm)
I
D
=1mA
1.10
1.0
8
1.06
1.04
1.02
1.00
0.9
8
0.96
0.94
0.92
-50
-25
0
25 50
75
T
J
(°C)
100
8/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 16929 Rev 3
9/18
Package mechanical data
STD10NM50N, STF10NM50N, STP10NM50N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
ECO
P
ACK is an ST trademark.
Table 9.
Dim.
D
P
A
K (TO-252) mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
1.50
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
10/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Figure 23.
D
P
A
K (TO-252) drawing
Package mechanical data
006
8
772_H
(a)
Figure 24.
D
P
A
K footprint
6.7
3
1.
8
1.6
2.
3
2.
3
6.7
1.6
AM0
88
50v1
a. All
dimension are in millimeters
Doc ID 16929 Rev 3
11/18
Package mechanical data
STD10NM50N, STF10NM50N, STP10NM50N
Table 10.
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 25.
TO-220FP drawing
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_K
12/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Package mechanical data
Table 11.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 16929 Rev 3
13/18
Package mechanical data
Figure 26.
TO-220 type A drawing
STD10NM50N, STF10NM50N, STP10NM50N
00159
88
_typeA_Rev_
S
14/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Packaging mechanical data
5
Packaging mechanical data
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
Doc ID 16929 Rev 3
15/18
Packaging mechanical data
Figure 27.
Tape for D
P
A
K (TO-252)
STD10NM50N, STF10NM50N, STP10NM50N
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
Top cover
t
a
pe
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 28.
Reel for D
P
A
K (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
16/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Revision history
6
Revision history
Table 13.
Document revision history
Date
Revision
Changes
16-Dec-2009
08-Sep-2010
1
2
First release.
Document status promoted from preliminary data to datasheet.
Updated V
DSS
(@Tjmax) in cover page.
26-Oct-2011
3
Minor text changes.
Doc ID 16929 Rev 3
17/18
STD10NM50N, STF10NM50N, STP10NM50N
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