STMicroelectronics-STF11N50M2
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STD11N50M2, STF11N50M2
Datasheet
N-channel 500
V
,
0
.45 Ω typ., 8 A MDmesh™ M2 Power MOSFE
T
s
i
n DPAK and
TO-220FP packages
Features
V
@ T
R
max.
I
D
Order code
STD11N50M2
STF11N50M2
Package
DPAK
DS
Jmax
DS(on)
TAB
3
550 V
0.53 Ω
8 A
2
TO-220FP
1
3
2
1
•
•
•
•
Extremely low gate charge
DPAK
TO-220FP
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
Zener-protected
D(2, TAB)
Applications
G(1)
•
Switching applications
Description
These devices are N-channel Power MOSFE
T
s
d
eveloped using the MDmesh™ M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
S(3)
AM01475V1
Product status
Product summary
Order code
Marking
STD11N50M2
11N50M2
DPAK
Package
Packing
T
a
pe and reel
STF11N50M2
11N50M2
TO-220FP
Tube
Order code
Marking
Package
Packing
DS10177
–
Rev 3
–
October 2018
For further information contact your local STMicroelectronics sales office.
STD11N50M2, STF11N50M2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Value
Symbol
Unit
DPAK
TO-220FP
V
Gate-source voltage
±25
8
V
A
GS
I
Drain current (continuous) at T
= 25 °C
D
D
C
I
Drain current (continuous) at T
= 100 °C
5
A
C
I
Drain current (pulsed)
32
A
DM
P
TOT
T
o
tal power dissipation at T
= 25 °C
85
25
W
C
Peak diode recovery voltage slope
15
50
V/ns
V/ns
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from all three leads
V
2.5
kV
°C
ISO
to external heat sink (t=1 s; T
= 25 °C)
C
T
Operating junction temperature range
Storage temperature range
j
-55 to 150
T
stg
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 8 A, di/dt ≤ 400 A/μs, V
< V
, V
= 400 V.
(BR)DSS DD
SD
DS(peak)
V
≤ 400 V.
DS
Table 2.
Thermal data
Value
Symbol
Parameter
Unit
DPAK
1.47
50
TO-220FP
R
Thermal resistance junction-case
Thermal resistance junction-pcb
Thermal resistance junction-ambient
5
°C/W
°C/W
°C/W
thj-case
R
thj-pcb
R
thj-amb
62.5
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
Value
Unit
I
2
A
AR
(pulse width limited by T
Max)
j
Single pulse avalanche energy
E
190
mJ
AS
(starting T
= 25 °C, I
= I
, V
= 50 V)
j
D
AR
DD
DS10177
–
Rev 3
page 2/22
STD11N50M2, STF11N50M2
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
Drain-source breakdown
voltage
V
I
= 1 mA, V
= 0 V
500
(BR)DSS
D
GS
V
V
T
= 500 V, V
= 0 V
1
µA
DS
GS
Zero gate voltage drain
current
I
= 500
V
, V
= 0 V,
DSS
DS
GS
100
µA
C
I
V
V
= 0
V
, V
=
±
25 V
Gate body leakage current
Gate threshold voltage
±10
4
µA
V
GSS
DS
GS
V
= V
, I
= 250 µA
2
3
GS(th)
DS
GS
GS
D
Static drain-source on
resistance
R
DS(on)
V
= 10 V, I
= 4 A
0.45
0.53
Ω
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
395
26
Max.
Unit
C
iss
C
oss
V
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
–
–
pF
DS
GS
C
rss
Reverse transfer capacitance
1
Equivalent output
capacitance
= 0
V
, V
= 0
t
o 400 V
C
oss eq.
–
–
108
–
–
pF
Ω
GS
DS
Rg
Gate input resistance
T
o
tal gate charge
f = 1 MHz open drain
6.3
12
2
Q
g
V
V
= 400
V
, I
= 8
A
,
DD
D
Q
gs
Gate-source charge
Gate-drain charge
–
–
nC
GS
Q
6.4
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
11
Max.
Unit
t
Turn-on delay time
Rise time
V
= 250
V
, I
= 4
A
,
D
d(on)
DD
R
G
= 4.7 Ω, V
= 10 V
GS
t
r
9
–
–
ns
t
Turn-off delay time
Fall time
8
d(off)
t
28.5
f
DS10177
–
Rev 3
page 3/22
STD11N50M2, STF11N50M2
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
8
Unit
I
Source-drain current
SD
–
–
A
I
Source-drain current (pulsed)
Forward on voltage
32
SDM
V
I
I
= 8 A, V
= 0 V
1.6
V
ns
μC
A
SD
GS
SD
t
rr
= 8 A, di/dt = 100 A/µs
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
258
1.84
14.3
370
SD
V
Q
DD
–
–
rr
I
RRM
t
I
= 8 A, di/dt = 100 A/µs
= 60 V, T
= 150 °C (see
ns
μC
rr
SD
V
Q
DD
j
2.87
rr
I
Reverse recovery current
15.5
A
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 μs, duty cycle 1.5%.
DS10177
–
Rev 3
page 4/22
STD11N50M2, STF11N50M2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance for DPAK
Figure 1.
Safe operating area for DPAK
GC20460
GIPG050620141220SA
K
I
D
(A)
10µs
10
10
0
100µs
1
1ms
10
-1
10
-2
10ms
Tj=150°C
T
c
=25°C
Single pulse
0.1
0.1
V
DS
(V)
1
10
100
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 4.
Thermal impedance for TO-220FP
Figure 3.
Safe operating area for TO-220FP
GIPG050620141300SA
GC20940
K
I
D
(A)
10
10
-1
10
-2
10
-3
10µs
100µs
1
1ms
10ms
0.1
Tj=150°C
T
c
=25°C
Single pulse
0.01
V
DS
(V)
0.1
1
10
100
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
GIPG090620141310SA
GIPG090620141514SA
I
D
I
D
(A)
(A)
V
GS
=8, 9, 10V
V
DS
=18V
16
12
8
16
12
7V
6V
8
4
0
5V
4
0
4V
V
DS
(V)
2
8
12
16
8
V
GS
(V)
0
4
0
4
6
DS10177
–
Rev 3
page 5/22
STD11N50M2, STF11N50M2
Electrical characteristics (curves)
Figure 7.
Gate charge vs gate-source voltage
Figure 8.
Static drain-source on-resistance
GIPG090620141521SA
GIPG090620141528SA
R
DS(on)
V
GS
(V)
V
DS
(V)
(
Ω
)
V
DS
V
DD
=400V
I
D
=8A
V
GS
=10V
375
10
0.47
0.46
300
8
225
150
6
4
0.45
0.44
0.43
75
2
0
0
2
3
4
5
6
1
6
7
0
2
4
8
Q
g
(nC)
I
D
(A)
10
12
Figure 9.
Capacitance variations
Figure 10.
Output capacitance stored energy
GIPG090620141537SA
GIPG090620141544SA
E
oss
C
(pF)
(µJ)
2.4
1000
100
10
2.0
1.6
1.2
0.8
Ciss
Coss
Crss
f =1 MHz
1
0.4
0.0
0.1
0.1
100
200
1
10
V
DS
(V)
0
100
300
V
DS
(V)
400
Figure 11.
Normalized gate threshold voltage vs
temperature
Figure 12.
Normalized on-resistance vs temperature
GIPG090620140921SA
R
DS(on)
(norm)
GIPG090620140915SA
V
GS(th)
(norm)
V
GS
=10V
2.2
1.8
1.4
1
I
D
=250µA
1.1
1.0
0.9
0.8
0.6
0.2
0.7
0.6
-75
T
J
(°C)
-25
25
75
125
-75
-25
25
75
T
J
(°C)
125
DS10177
–
Rev 3
page 6/22
STD11N50M2, STF11N50M2
Electrical characteristics (curves)
Figure 13.
Normalized V
(BR)DSS
vs temperature
Figure 14.
Source-drain diode forward characteristics
GIPG090620141010SA
GIPG090620141002SA
V
(BR)DSS
V
SD
(V)
(norm)
T
J
=-50°C
I
D
=1mA
1
1.08
T
J
=25°C
0.9
0.8
0.7
1.04
1.00
0.96
T
J
=150°C
0.92
0.88
0.6
0.5
1
2
3
4
5
I
SD
(A)
-75
T
J
(°C)
-25
25
75
125
DS10177
–
Rev 3
page 7/22
STD11N50M2, STF11N50M2
Test circuits
3
Test circuits
Figure 15.
Test circuit for resistive load switching times
Figure 16.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 17.
Test circuit for inductive load switching and
diode recovery times
Figure 18.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 20.
Switching time waveform
Figure 19.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS10177
–
Rev 3
page 8/22
STD11N50M2, STF11N50M2
Package information
4
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS10177
–
Rev 3
page 9/22
STD11N50M2, STF11N50M2
DPAK (TO-252) type A package information
4.1
DPAK (TO-252) type A package information
Figure 21.
DPAK (TO-252) type A package outline
0068772_A_25
DS10177
–
Rev 3
page 10/22
STD11N50M2, STF11N50M2
DPAK (TO-252) type A package information
Table 8.
DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.286
4.572
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS10177
–
Rev 3
page 11/22
STD11N50M2, STF11N50M2
DPAK (TO-252) type C package information
4.2
DPAK (TO-252) type C package information
Figure 22.
DPAK (TO-252) type C package outline
0068772_C_25
DS10177
–
Rev 3
page 12/22
STD11N50M2, STF11N50M2
DPAK (TO-252) type C package information
Table 9.
DPAK (TO-252) type C mechanical data
mm
Typ.
2.30
1.01
Dim.
Min.
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.25
6.50
4.70
2.186
9.80
1.40
Max.
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
A
A1
A2
b
b4
c
5.33
c2
D
6.10
6.60
D1
E
6.70
E1
e
2.286
10.10
2.386
10.40
1.70
H
L
1.50
L1
L2
L3
L4
L6
θ1
θ2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DS10177
–
Rev 3
page 13/22
STD11N50M2, STF11N50M2
DPAK (TO-252) type E package information
4.3
DPAK (TO-252) type E package information
Figure 23.
DPAK (TO-252) type E package outline
0068772_type-E_rev.25
DS10177
–
Rev 3
page 14/22
STD11N50M2, STF11N50M2
DPAK (TO-252) type E package information
Table 10.
DPAK (TO-252) type E mechanical data
mm
Typ.
Dim.
Min.
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
A
A2
b
2.18
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
b4
c
c2
D
D1
E
6.73
E1
e
2.286
4.572
e1
H
9.94
1.50
10.34
1.78
L
L1
L2
L4
2.74
0.89
1.27
1.02
Figure 24.
DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS10177
–
Rev 3
page 15/22
STD11N50M2, STF11N50M2
DPAK (TO-252) packing information
4.4
DPAK (TO-252) packing information
Figure 25.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS10177
–
Rev 3
page 16/22
STD11N50M2, STF11N50M2
DPAK (TO-252) packing information
Figure 26.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 11.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS10177
–
Rev 3
page 17/22
STD11N50M2, STF11N50M2
TO-220FP package information
4.5
TO-220FP package information
Figure 27.
TO-220FP package outline
7012510_Rev_12_B
DS10177
–
Rev 3
page 18/22
STD11N50M2, STF11N50M2
TO-220FP package information
Table 12.
TO-220FP package mechanical data
mm
Typ.
Dim.
Min.
4.4
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DS10177
–
Rev 3
page 19/22
STD11N50M2, STF11N50M2
Revision history
Table 13.
Document revision history
Date
Version
Changes
12-Mar-2014
1
First release.
– Modified: title
– Modified: dv/dt values in
T
a
ble 2
– Modified: values in
T
a
ble 4
– Modified: R
value in
T
a
ble 5
DS(on)
17-Jun-2014
2
– Modified: the entire typical values in
T
a
ble 6
,
7
and
8
– Added:
Section 2.1: Electrical characteristics (curves)
– Updated:
Section 4: Package mechanical data
– Minor text changes
Removed maturity status indication from cover page. The document status is
production data.
Modified title, features and description on cover page.
Minor text changes.
26-Oct-2018
3
DS10177
–
Rev 3
page 20/22
STD11N50M2, STF11N50M2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
DPAK (TO-252) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
DPAK (TO-252) type C package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DPAK (TO-252) type E package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
TO-220FP package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
17
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
DS10177
–
Rev 3
page 21/22
STD11N50M2, STF11N50M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS10177
–
Rev 3
page 22/22
