STMicroelectronics-STF11N60DM2
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STF11N60DM2
Datasheet
N-channel 600
V
,
3
70 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a
TO-220FP package
V
@ T
R max.
DS(on)
I
P
TOT
Order code
DS
Jmax
D
STF11N60DM2
650 V
420 mΩ
10 A
25 W
•
•
•
•
•
•
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
3
2
1
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
TO-220FP
D(2)
Applications
•
Switching applications
G(1)
Description
S(3)
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
recovery diode series. It offers very low recovery charge (Q
rr
) and time (t
rr
) combined
with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
NG1D2S3Z
Product status
Product summary
Order code
Marking
STF11N60DM2
11N60DM2
TO220FP
Tube
Package
Packing
DS11673
–
Rev 2
–
November 2019
For further information contact your local STMicroelectronics sales office.
STF11N60DM2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
Gate-source voltage
±25
10
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
= 25 °C
case
case
I
A
D
= 100 °C
6.3
40
I
Drain current (pulsed)
A
DM
P
TOT
T
o
tal power dissipation at T
= 25 °C
case
25
W
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
50
V/ns
kV
50
Insulation withstand voltage (RMS) from all three leads to external heat
sink
V
2.5
ISO
T
stg
Storage temperature range
-55 to 150
°C
T
Operating junction temperature range
j
1. Pulse
width is limited by safe operating area.
2.
3.
I
≤ 10 A, di/dt=900 A/μs; V
peak < V
,V =
400 V
(BR)DSS DD
SD
DS
V
≤ 480 V.
DS
4. t
= 1 s; T
= 25 °C
C
Table 2.
Thermal data
Parameter
Symbol
Value
5
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Value
2.5
Unit
A
I
AR
E
250
mJ
AS
1. pulse
width limited by T
jmax
2. starting
T =
25 °C, I
= I
, V
= 50 V.
j
D
AR
DD
DS11673
–
Rev 2
page 2/12
STF11N60DM2
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
V
= 0
V
, I
= 1
m
A
600
V
(BR)DSS
GS
D
= 0
V
, V
=
6
00 V
1.5
GS
GS
DS
I
Zero gate voltage drain current
µA
DSS
V
T
= 0
V
, V
=
6
00 V,
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
5
µA
V
GSS
DS
DS
V
V
V
= V
, I
= 250 µA
3
4
GS(th)
GS
D
Static drain-source on-
resistance
R
DS(on)
= 10
V
, I
= 5 A
D
370
420
mΩ
GS
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
614
32
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
1.08
57
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
pF
Ω
DS
GS
R
f = 1 MHz, I
= 0 A
D
6.2
G
Q
16.5
3.8
g
V
= 480
V
, I
=
1
0 A, V
= 0 to 10 V
D GS
DD
Q
Gate-source charge
nC
gs
Q
Gate-drain charge
9.2
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
11.7
6.3
Max.
Unit
t
–
–
–
–
–
–
–
–
d(on)
V
V
= 300
V
, I
= 5
A
, R
= 4.7 Ω,
D G
DD
t
Rise time
r
GS
ns
t
Turn-off delay time
Fall time
31
d(off)
t
9.5
f
DS11673
–
Rev 2
page 3/12
STF11N60DM2
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
10
Unit
A
I
–
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
40
A
SDM
V
V
= 0
V
, I
=
1
0 A
SD
1.6
V
GS
SD
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
90
248
5.5
ns
nC
A
rr
I
= 10 A, di/dt = 100 A/µs, V
= 60 V
DD
SD
Q
rr
I
RRM
t
160
664
8.3
ns
nC
A
rr
I
= 10 A, di/dt = 100 A/µs, V
= 60
V
,
DD
SD
j
Q
rr
I
RRM
1. Limited
by maximum junction temperature.
2. Pulse
width is limited by safe operating area.
3. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
= ±250 µA, I
= 0 A
Min.
Typ.
Max.
Unit
V
I
GS
Gate-source breakdown voltage
±30
–
–
V
(BR)GSO
D
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS11673
–
Rev 2
page 4/12
STF11N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
I
GC20940
K
D
(A)
GIPG270516FQ6F01FSOA
Operation in this area is
limited by max. R
DS(on)
10
-1
10
-2
10
-3
10
1
t
t
= 10µs
p
p
= 100µs
10
0
t
t
= 1ms
p
p
T
≤
150 °C
j
= 10ms
Tc
=
25°C
single pulse
10
-1
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
10
-1
10
0
10
1
10
2
10
3
V
(V)
DS
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
I
I
D
GIPG270516FQ6F01FOCH
GIPG270516FQ6F01FTCH
D
(A)
(A)
20
V
= 8, 9, 10 V
GS
V
= 20 V
DS
20
16
12
8
16
12
8
7 V
6 V
4
0
4
0
2
3
4
5
6
7
8
9 V
(V)
GS
0
4
8
12
16
V
(V)
DS
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
V
GIPG270516FQ6F01FQVG
V
R
GIPG270516FQ6F01FRID
GS
(V)
DS
(V)
DS(on)
(mΩ)
V
= 480V
DD
12
600
V
= 10 V
GS
I
= 10 A
D
390
V
DS
10
8
500
400
300
200
100
380
370
6
4
360
350
2
0
0
0
4
8
12
16 Qg
(nC)
0
2
4
6
8
10
I
(A)
D
DS11673
–
Rev 2
page 5/12
STF11N60DM2
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
C
GIPG270516FQ6F01FCVR
V
GIPG270516FQ6F01FVTH
GS(th)
(pF)
(norm.)
I
= 250 μ A
D
C
10
3
iss
1.1
1.0
0.9
0.8
10
2
10
1
C
C
oss
rss
f = 1 MHz
10
0
0.7
0.6
10
-1
10
-1
10
0
10
1
10
2
V
(V)
DS
-75
-25
25
75
125
T (°C)
J
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
R
GIPG270516FQ6F01FRON
V
(BR)DSS
(norm.)
DS(on)
(norm.)
GIPG270516FQ6F01FBDV
V
GS
=10 V
I
= 1 mA
D
2.2
1.08
1.8
1.4
1.0
1.04
1.00
0.96
0.6
0.2
0.92
0.88
-75
-25
25
75
125
T (°C)
J
-75
-25
25
75
125
T (°C)
J
Figure 11.
Output capacitance stored energy
Figure 12.
Source-drain diode forward characteristics
Eoss
(µJ )
V
SD
(V)
GIPG270516FQ6F01FEOS
GIPG270516FQ6F01FSDF
1.1
T
= – 50 °C
J
4
3
2
T
= 25 °C
J
1.0
0.9
0.8
0.7
T
= 150 °C
J
1
0
0.6
0.5
0
100 200 300 400 500 600
V (V)
0
2
4
6
8
10
I
(A)
SD
DS
DS11673
–
Rev 2
page 6/12
STF11N60DM2
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS11673
–
Rev 2
page 7/12
STF11N60DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-220FP package information
Figure 19.
TO-220FP package outline
7012510_Rev_13_B
DS11673
–
Rev 2
page 8/12
STF11N60DM2
TO-220FP package information
Table 9.
TO-220FP package mechanical data
mm
Dim.
Min.
4.40
2.50
2.50
0.45
0.75
1.15
1.15
4.95
2.40
10.00
Typ.
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16.00
28.60
9.80
2.90
15.90
9.00
3.00
30.60
10.60
3.60
16.40
9.30
3.20
DS11673
–
Rev 2
page 9/12
STF11N60DM2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220FP package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
DS11673
–
Rev 2
page 11/12
STF11N60DM2
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DS11673
–
Rev 2
page 12/12
