STMicroelectronics-STF11N65M2-045Y
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STF11N65M2(045Y)
Datasheet
N-channel 650
V
,
0
.60 Ω typ., 7 A MDmesh M2 Power MOSFET
in a TO-220FP narrow leads package
Features
V
R
DS(on)
max.
I
P
TOT
Order code
DS
D
STF11N65M2(045Y)
650 V
0.68 Ω
7 A
25 W
•
•
•
•
Extremely low gate charge
3
2
1
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
TO-220FP narrow leads
Zener-protected
D(2)
Applications
•
Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
NG1D2S3Z
Product status link
Product summary
Order code
Marking
STF11N65M2(045Y)
11N65M2
TO-220FP narrow
leads
Package
Packing
Tube
DS10326
–
Rev 3
–
July 2019
For further information contact your local STMicroelectronics sales office.
STF11N65M2(045Y)
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
7
Unit
V
Gate-source voltage
V
GS
Drain current (continuous) at T
= 25 °C
C
I
A
D
Drain current (continuous) at T
= 100 °C
4.4
28
C
I
Drain current (pulsed)
A
DM
P
T
o
tal power dissipation at T
= 25 °C
25
W
TOT
C
Peak diode recovery voltage slope
15
V/ns
kV
MOSFET dv/dt ruggedness
50
Insulation withstand voltage (RMS) from all three leads to external heat sink
V
2.5
ISO
(t = 1 s, T
= 25 °C)
C
T
Storage temperature range
stg
-55 to 150
°C
T
Operating junction temperature range
J
1. Limited
by maximum junction temperature.
2. Pulse
width limited by T
max.
J
3.
4.
I
≤ 7 A, di/dt = 400 A/μs, V
(peak) < V
, V
= 400 V.
(BR)DSS DD
SD
DS
V
≤ 520 V.
DS
Table 2.
Thermal data
Parameter
Symbol
Value
5
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
1.5
Unit
A
I
Avalanche current, repetitive or not repetitive (pulse width limited by T
max)
AR
J
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
110
mJ
AS
J
D
AR
DD
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–
Rev 3
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STF11N65M2(045Y)
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
GS
V
GS
V
DS
V
DS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
650
V
(BR)DSS
D
= 0
V
, V
=
6
50 V
1
DS
I
Zero gate voltage drain current
µA
DSS
100
DS
C
I
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
±10
4
µA
V
GSS
GS
V
= V
, I
= 250 µA
2
3
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
3
.5 A
D
Static drain-source on-resistance
0.60
0.68
Ω
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
–
–
–
–
–
410
20
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
rss
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
0.9
43
= 0 to 520
V
, V
= 0 V
C
oss eq.
pF
Ω
DS
GS
R
G
f = 1 MHz, I
= 0 A
D
6.4
12.5
3.2
5.8
Q
g
V
DD
= 520
V
, I
= 7
A
, V
= 0 to 10 V
D GS
Q
Gate-source charge
nC
gs
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
9.5
7.5
26
–
–
–
–
V
= 325
V
, I
=
3
.5 A,
d(on)
DD
D
R
= 4.7 Ω, V
= 10 V
t
G
GS
r
ns
t
Turn-off delay time
Fall time
d(off)
t
15
f
DS10326
–
Rev 3
page 3/12
STF11N65M2(045Y)
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ. Max. Unit
I
–
–
–
–
–
–
–
–
7
A
A
SD
I
Source-drain current (pulsed)
Forward on voltage
28
1.6
SDM
V
V
= 0
V
, I
= 7 A
SD
V
GS
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
318
2.5
ns
µC
A
I
= 7 A, di/dt = 100 A/µs, V
= 60 V
DD
SD
Q
rr
I
15.5
437
3.2
RRM
t
I
= 7 A, di/dt = 100 A/µs,
= 60 V, T
= 150 °C
ns
µC
rr
SD
V
Q
DD
J
rr
I
Reverse recovery current
–
15
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
DS10326
–
Rev 3
page 4/12
STF11N65M2(045Y)
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GC20940
GIPG080915MQF1045YFSOA
K
I
D
(A)
is
this area
Operation in
limited by R
DS(on)
10
1
10
0
10
-1
10
-2
10
-3
10 μs
100 μs
1 ms
10 ms
10
-1
10
-2
T
≤
1
c
single
50 °C
T
j
= 25
°C
pulse
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
10
-1
10
0
10
1
10
2
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG110515MQF1LOCH
GIPG110515MQF1LTCH
I
D
I
D
(A)
(A)
V
GS
= 8,9,10 V
12
10
8
V
GS
= 7 V
12
10
8
V
DS
= 19 V
V
GS
= 6 V
6
6
4
4
2
0
2
V
GS
= 5 V
0
0
0
4
8
12
16
V
DS
(V)
2
4
6
8
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GIPG110515MQF1LQVG
V
DS
GIPG140815MQF1PRID
V
GS
(V)
R
DS(on)
(V)
(Ω)
12
600
V
DS
V
DD
= 520 V
I
D
= 7 A
V
GS
= 10 V
0.624
10
8
500
400
300
200
100
0.608
6
4
0.592
0.576
2
0
0
0
2
4
6
8
10
12
Q
g
(nC)
0
2
4
6
I
D
(A)
DS10326
–
Rev 3
page 5/12
STF11N65M2(045Y)
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
GIPG140815MQF1PCVR
C
(pF)
GIPG110515MQF1LVTH
V
GS(th)
(norm.)
I
D
= 250 µA
1.1
10
3
10
2
10
1
C
ISS
1.0
0.9
0.8
C
OSS
f = 1 MHz
10
0
C
RSS
0.7
0.6
10
-1
10
-1
10
0
10
1
10
2
V
DS
(V)
-75
-25
25
75
125
T
j
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GIPG110515MQF1LRON
R
DS(on)
(norm.)
GIPG110515MQF1LBDV
V
(BR)DSS
(norm.)
V
GS
= 10 V
I
D
= 1 mA
2.2
1.08
1.04
1.00
0.96
1.8
1.4
1.0
0.6
0.2
0.92
0.88
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Output capacitance stored energy
Figure 12.
Source- drain diode forward characteristics
GIPG110515MQF1LEOS
GIPG140815MQF1PSDF
E
OSS
V
SD
(V)
(μJ)
T
j
= -50 °C
3
1.0
T
j
= 25 °C
2
0.8
T
j
= 150 °C
1
0
0.6
0.4
0
100 200 300 400 500 600
V
DS
(V)
0
2
4
6
I
SD
(A)
DS10326
–
Rev 3
page 6/12
STF11N65M2(045Y)
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS10326
–
Rev 3
page 7/12
STF11N65M2(045Y)
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-220FP narrow leads package information
Figure 19.
TO-220FP narrow leads package outline
TOP VIEW
SIDE VIEW
8197858_3
DS10326
–
Rev 3
page 8/12
STF11N65M2(045Y)
TO-220FP narrow leads package information
Table 8.
TO-220FP narrow leads package mechanical data
mm
Dim.
Min.
4.40
2.50
2.50
0.45
0.75
0.95
4.95
2.40
10.00
15.20
28.60
10.30
2.60
15.80
9.00
3.00
Typ.
Max.
4.60
2.70
2.75
0.70
1.00
1.20
5.20
2.70
10.40
15.60
30.60
11.10
2.90
16.20
9.30
3.20
A
B
D
E
F
F1
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
2.70
16.00
DS10326
–
Rev 3
page 9/12
STF11N65M2(045Y)
Revision history
Table 9.
Document revision history
Changes
Date
Revision
09-May-2014
1
First release.
T
e
xt and formatting changes throughout document.
On cover page:
– updated
Title
,
Features
and
Description
– updated cover image silhouette
08-Sep-2015
05-Jul-2019
2
3
In section
Electrical characteristics
:
– updated and renamed table
Static
(was On /off states)
Updated section
Electrical characteristics (curves)
Updated and renamed section
Package information
(was Package mechanical data)
Minor text changes.
DS10326
–
Rev 3
page 10/12
STF11N65M2(045Y)
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220FP narrow leads package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
DS10326
–
Rev 3
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STF11N65M2(045Y)
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DS10326
–
Rev 3
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