STMicroelectronics-STF12NK60Z
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STP12NK60Z
STF12NK60Z, STW12NK60Z
N-channel 650 V @Tjmax, 0.53
Ω
, 10 A TO-220, TO-220F
P
,
T
O-247
Zener-protected SuperMESH™ Power MOSFET
Features
V
DSS
(@Tjmax)
R
DS(on)
max
Type
I
D
P
W
3
3
2
2
STP12NK60Z
STF12NK60Z
STW12NK60Z
650 V
650 V
650 V
<0.640
Ω
10 A
150 W
<0.640
Ω
10 A
35 W
<0.640
Ω
10 A
150 W
1
1
TO-220
TO-220FP
■
Extremely high dv/dt capability
■
100% avalanche tested
3
2
1
TO-247
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
Figure 1.
Internal schematic diagram
Application
D(2)
■
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STP12NK60Z
STF12NK60Z
STW12NK60Z
P12NK60Z
F12NK60Z
W12NK60Z
TO-220
TO-220FP
TO-247
T
u
be
T
u
be
T
u
be
October 2009
Doc ID 11324 Rev 7
1/15
15
Contents
STP12NK60Z, STF12NK60Z, STW12NK60Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220, TO-247
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
600
30
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
10
6.3
40
10
(1)
6.3
(1)
40
(1)
35
A
I
D
A
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
150
1.2
W
0.27
2500
W/°C
V
V
ESD(G-S)
Gate source ESD (HBM-C=100 p
F
,
R
=1.5 k
Ω
)
dv/dt
(3)
Peak diode recovery voltage slope
4.5
V/ns
Insulation withstand voltage (RMS) from all three
V
ISO
2500
V
leads to external heat sink (t =1 s;T
C
= 25 °C)
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max operating junction temperature
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
10 A, di/dt
≤
200 A/µs, V
DD
= 480 V
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220 TO-247 TO-220FP
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
0.83
3.6
°C/W
°C/W
62.5
50
300
62.5
Maximum lead temperature for soldering
T
l
°C
purpose
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
I
AS
10
A
Single pulse avalanche energy
E
AS
260
mJ
(starting Tj=25°C, I
D
=I
AS
, V
DD
=50 V)
Doc ID 11324 Rev 7
3/15
Electrical characteristics
STP12NK60Z, STF12NK60Z, STW12NK60Z
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
Min. Typ. Max.
Unit
Drain-source
V
(BR)DSS
600
V
breakdown voltage
Zero gate voltage
V
DS
= Max rating
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= Max rating, T
C
=125 °C
50
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
=
20 V
10
4.5
0.53 0.64
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 5 A
3
3.75
Static drain-source on
resistance
R
DS(on)
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
(1)
g
fs
Forward transconductance
V
DS
=10 V I
= 5 A
–
9
–
S
, D
Input capacitance
C
iss
C
oss
C
rss
1740
195
49
pF
pF
pF
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Output capacitance
–
–
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 480 V
–
–
101
–
–
pF
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
V
DD
= 300
V
,
I
D
= 5 A,
R
G
=4.7
Ω
V
GS
= 10 V
22.5
18.5
55
ns
ns
ns
ns
T
u
rn-off delay time
Fall time
31.5
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480
V
,
I
D
= 10 A,
V
GS
= 10 V
59
10
32
nC
nC
nC
–
–
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
4/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
Electrical characteristics
Min Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
10
40
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 10 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, di/dt = 100 A/µs
V
DD
= 50 V
358
3
ns
µC
A
Q
rr
–
–
I
RRM
17
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, di/dt = 100 A/µs
V
DD
= 50
V
,
T
j
= 150 °C
460
4.2
ns
µC
A
Q
rr
I
RRM
18.2
1. Pulse
width limited by safe operating area
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
Gate-Source breakdown
voltage
(1)
BV
GSO
Igs= 1
mA (open drain)
30
–
–
V
1. The
built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Doc ID 11324 Rev 7
5/15
Electrical characteristics
STP12NK60Z, STF12NK60Z, STW12NK60Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Thermal impedance for TO-247
Thermal impedance for TO-220FP
Figure 4.
Safe operating area for TO-247
Figure 5.
I
D
(A)
10
µs
10
100
µs
1m
s
1
10m
s
Tj=150°C
Tc=25°C
S
inlge
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220FP
Figure 7.
6/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10.
Transconductance
Figure 11.
Static drain-source on resistance
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
Doc ID 11324 Rev 7
7/15
Electrical characteristics
STP12NK60Z, STF12NK60Z, STW12NK60Z
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized breakdown voltage vs
temperature
Figure 18.
Maximum avalanche energy vs
temperature
HV27640
E
A
S
(mJ)
I
D
=10 A
260
V
DD
=50 V
240
220
200
1
8
0
160
140
120
100
8
0
60
40
20
0
0
120
140 T
20
40
60
8
0 100
J
(°C)
8/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
Test circuits
3
Test circuits
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 21.
Test circuit for inductive load
switching and diode recovery times
Figure 22.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 23.
Unclamped inductive waveform
Figure 24.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 11324 Rev 7
9/15
Package mechanical data
STP12NK60Z, STF12NK60Z, STW12NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
b
1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
2
8
.
9
0
3
.75
3
.
8
5
2.
9
5
2.65
0015988_Rev_S
Doc ID 11324 Rev 7
11/15
Package mechanical data
STP12NK60Z, STF12NK60Z, STW12NK60Z
TO-220FP mechanical data
mm
Typ.
Dim.
Min.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L
3
L4
L5
L6
L7
Di
a
16
2
8
.6
9.
8
2.9
15.9
9
3
0.6
10.6
3
.6
16.4
9.
3
3
3
.2
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_J
12/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
Package mechanical data
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.
8
5
5.15
2.20
1.0
2.60
1.40
b
1
b
2
c
2.0
2.40
3
.0
3
.40
0.40
1
9
.
8
5
15.45
0.
8
0
D
20.15
15.75
E
e
5.45
1
8
.50
5.50
L
14.20
14.
8
0
4.
3
0
L1
L2
øP
øR
S
3
.70
3
.55
3
.65
4.50
5.50
Doc ID 11324 Rev 7
13/15
Revision history
STP12NK60Z, STF12NK60Z, STW12NK60Z
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
12-Apr-2004
06-Sep-2005
13-Sep-2005
05-Sep-2006
26-Apr-2007
25-Jan-2008
13-Oct-2009
1
2
3
4
5
6
7
First release
Inserted ecopack indication
Final version
The document has been reformatted
Added new package, mechanical data: TO-247
14/15
Doc ID 11324 Rev 7
STP12NK60Z, STF12NK60Z, STW12NK60Z
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Doc ID 11324 Rev 7
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