STMicroelectronics-STF13N65M2
| Part # | STMicroelectronics-STF13N65M2 |
Download  | STMicroelectronics-STF13N65M2 |
STF13N65M2,
STFI13N65M2
N-channel 650
V
, 0.37
Ω
typ., 10 A MDmesh™ M2 Power
MOSFE
T
s
i
n TO-220FP and I²PAKFP packages
Datasheet
–
production data
Features
R
DS(on)
max
Order code
V
DS
I
D
STF13N65M2
STFI13N65M2
650 V
0.43
ꢀ
10A
•
Extremely low gate charge
3
2
1
2
1
3
•
Excellent output capacitance (C
oss
) profile
•
100% avalanche tested
TO-220FP
I
2
P
A
KFP (TO-281)
•
Zener-protected
Applications
•
Switching applications
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFE
T
s
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Table 1. Device summary
Order code
Marking
Package
Packaging
STF13N65M2
STFI13N65M2
TO-220FP
13N65M2
Tube
I
2
PAKFP (TO-281)
December 2014
DocID026893 Rev 2
1/15
Contents
STF13N65M2,STFI13N65M2
Contents
3
4
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
GS
I
D
Gate-source voltage
± 25
10
(1)
25
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
A
(2)
I
DM
A
P
TOT
V
ISO
T
o
tal dissipation at T
C
= 25 °C
W
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; T
C
= 25 °C)
2500
V
dv/dt
(3)
dv/dt
(4)
T
stg
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
15
50
V/ns
– 55 to 150
150
°C
T
j
Max. operating junction temperature
1. Limited
by maximum junction temperature..
2. Pulse
width limited by safe operating area.
3.
4.
I
≤
10 A, di/dt
≤
400 A/µs; V
≤
520 V
< V
, V
=400 V
(BR)DSS DD
SD
DS peak
V
DS
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
5
°C/W
°C/W
62.5
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
AR
1.8
A
(pulse width limited by T
jmax
)
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
; V
DD
= 50 V)
E
AS
350
mJ
DocID026893 Rev 2
3/15
15
Electrical characteristics
STF13N65M2,STFI13N65M2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Drain-source
Test conditions
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0 V
650
V
breakdown voltage
V
DS
= 650 V
1
µA
µA
Zero gate voltage
I
DSS
drain current (V
GS
= 0)
V
DS
= 650 V, T
C
= 125 °C
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
= ± 25 V
10
4
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
Static drain-source
V
GS
= 10
V
, I
D
= 5 A
on-resistance
0.37
0.43
ꢀ
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
590
–
–
pF
pF
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
27.5
Reverse transfer
capacitance
C
rss
–
–
–
1.1
168.5
6.5
–
–
–
pF
pF
ꢀ
Equivalent output
capacitance
(1)
C
oss eq.
V
DS
= 0 to 520 V, V
GS
= 0 V
f = 1 MHz open drain
Intrinsic gate
resistance
R
G
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
17
3.3
7
–
nC
nC
nC
V
DD
= 520
V
,
I
D
= 10 A,
–
–
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
Table 7. Switching times
Test conditions
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Min.
Typ.
Max. Unit
Turn-on delay time
Rise time
–
–
–
–
11
7.8
38
12
–
–
–
–
ns
ns
ns
ns
V
DD
= 325 V, I
D
= 5 A,
R
G
= 4.7
ꢀ
,
V
GS
= 10 V
Turn-off delay time
Fall time
4/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
Electrical characteristics
Min. Typ. Max.
Unit
T
a
ble 8. Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
I
SD
–
–
–
–
–
–
–
–
–
10
40
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
t
rr
I
SD
= 10 A, V
GS
= 0 V
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
312
2.7
ns
µC
A
I
SD
= 10 A, di/dt = 100 A/µs,
Q
rr
I
RRM
t
rr
17.5
464
4.1
ns
µC
A
I
SD
= 10 A, di/dt = 100 A/µs,
V
DD
= 60
V
, T
j
= 150 °C,
Q
rr
I
RRM
17.5
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID026893 Rev 2
5/15
15
Electrical characteristics
STF13N65M2,STFI13N65M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
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Figure 5. Transfer characteristics
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Figure 6. Normalized V
BR(DSS)
vs temperature
Figure 7. Static drain-source on-resistance
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6/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Capacitance variations
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Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
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Figure 12. Source-drain diode forward
characteristics
Figure 13. Output capacitance stored energy
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DocID026893 Rev 2
7/15
15
Test circuits
STF13N65M2,STFI13N65M2
3
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
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AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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8/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID026893 Rev 2
9/15
15
Package mechanical data
STF13N65M2,STFI13N65M2
4.1
TO-220F
P
,
S
TF13N65M2
Figure 20. TO-220FP drawing
7012510_Rev_K_B
10/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Ø
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID026893 Rev 2
11/15
15
Package mechanical data
2
STF13N65M2,STFI13N65M2
4.2
I PAKFP
(TO-281), STFI13N65M2
Figure 21. I
2
PAKFP (TO-281) drawing
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12/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
Package mechanical data
Table 10. I
2
PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
–
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.70
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
H
L1
L2
L3
L4
L5
L6
0.85
7.50
7.60
DocID026893 Rev 2
13/15
15
Revision history
STF13N65M2,STFI13N65M2
5
Revision history
Table 11. Document revision history
Changes
Date
Revision
15-Oct-2014
1
Initial release
T
e
xt edits throughout document
18-Dec-2014
2
14/15
DocID026893 Rev 2
STF13N65M2,STFI13N65M2
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
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