STMicroelectronics-STF13N95K3
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STF13N95K3, STFI13N95K3,
STP13N95K3, STW13N95K3
N-channel 950
V
,
0
.68
Ω
typ., 10 A Zener-protected SuperMESH3™
Power MOSFET in TO-220F
P
,
I
2
P
A
KF
P
,
T
O-220 and TO-247
Datasheet
−
production data
Features
Order codes
V
DSS
R
DS(on)
max
I
D
P
TOT
STF13N95K3
STFI13N95K3
40 W
I
2
950 V
< 0.85
Ω
10 A
P
A
KFP
TO-220FP
STP13N95K3
STW13N95K3
1
190 W
2
3
T
A
B
■
Gate charge minimized
■
Extremely large avalanche performance
■
100% avalanche tested
TO-247
TO-220
■
Very low intrinsic capacitance
■
Zener-protected
Applications
Figure 1.
Internal schematic diagram
■
Switching applications
D(2 or TAB)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
G(1)
STMicroelectronics’ SuperMESH™ technolog
y
,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capabilit
y
,
r
endering them suitable
for the most demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF13N95K3
STFI13N95K3
STP13N95K3
STW13N95K3
TO-220FP
I
2
P
A
KFP
TO-220
13N95K3
T
u
be
TO-247
June 2012
Doc ID15685 Rev 3
1/19
This is information on a product in full production.
19
Contents
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Electrical ratings
1
Electrical ratings
.
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-247
TO-220FP
I
2
P
A
KFP
V
DS
V
GS
I
D
Drain source voltage
950
30
V
V
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
10
6
10
(1)
6
(1)
40
(1)
40
A
I
D
A
(2)
I
DM
40
190
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Max current during repetitive or single
pulse avalanche (pulse width limited by
13
A
mJ
V
T
jmax
)
Single pulse avalanche energy
E
AS
400
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
V
ISO
2500
(t = 1 s; TC = 25 °C)
dv/dt
(3)
Peak diode recovery voltage slope
9
V/ns
°C
T
j
Operating junction temperature
Storage temperature
– 55 to 150
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤
10 A, di/dt
≤
400 A/µs, V
≤
V
Peak (BR)DSS.
SD
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220FP
I
2
P
A
KFP
TO-220
TO-247
Rthj-case Thermal
resistance junction-case max
Rthj-amb Thermal
resistance junction-amb max
0.66
3.13
62.5
°C/W
°C/W
62.5
50
Doc ID15685 Rev 3
3/19
Electrical characteristics
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
a
ble 4.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
950
V
V
DS
= 950
V
,
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 950
V
,
T
c=125 °C
50
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
=
20 V
10
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 5 A
3
4
5
Static drain-source on-
resistance
R
DS(on)
0.68 0.85
Ω
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C
iss
Input capacitance
Output capacitance
1620
117
pF
pF
C
oss
V
DS
=100
V
,
f
=1 MHz, V
GS
=0
–
–
–
–
Reverse transfer
capacitance
C
rss
1.2
pF
pF
Equivalent capacitance time
related
(1)
C
o(tr)
115
V
GS
= 0, V
DS
= 0 to 760 V
Equivalent capacitance
energy related
(2)
C
o(er)
–
–
131
2.3
–
–
pF
R
G
Intrinsic gate resistance
f = 1MHz open drain
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 760
V
,
I
D
= 10 A
51
10
30
nC
nC
nC
V
GS
=10 V
–
–
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Electrical characteristics
Min. Typ. Max. Unit
T
a
ble 6.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
18
16
50
21
ns
ns
ns
ns
V
DD
= 475
V
,
I
D
= 5 A,
R
G
=4.7
Ω
, V
GS
=10 V
–
–
T
u
rn-off delay time
Fall time
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
10
40
mA
A
–
–
I
SDM
Source-drain current (pulsed)
(1)
V
SD
Forward on voltage
I
SD
= 10 A, V
GS
=0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, V
DD
= 60 V
di/dt = 100 A/µs,
500
9
ns
µ
C
A
Q
rr
–
–
I
RRM
36
I
SD
= 10 A,V
DD
= 60 V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
624
11
ns
µ
C
A
di/dt=100 A/µs,
Q
rr
Tj=150 °C
(see
I
RRM
37
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
BV
GSO
Gate-source breakdown voltage
Igs 1mA,
(open drain)
–
V
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
Doc ID15685 Rev 3
5/19
Electrical characteristics
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
and
I
2
P
A
KFP
Figure 3.
Thermal impedance for TO-220FP
and
I
2
P
A
KFP
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Safe operating area for TO-220
Figure 5.
Thermal impedance for TO-220
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Safe operating area for TO-247
Figure 7.
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6/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
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Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Static drain-source on-resistance
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Figure 12.
Capacitance variations
Figure 13.
Output capacitance stored energy
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Doc ID15685 Rev 3
7/19
Electrical characteristics
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on-resistance vs
vs temperature
temperature
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6
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4
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4
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Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized B
VDSS
vs temperature
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Figure 18.
Maximum avalanche energy vs
starting Tj
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8/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Test circuits
3
Test circuits
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 21.
Test circuit for inductive load
switching and diode recovery times
Figure 22.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 23.
Unclamped inductive waveform
Figure 24.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID15685 Rev 3
9/19
Package mechanical data
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK
®
is an ST trademark.
10/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Package mechanical data
T
a
ble 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID15685 Rev 3
11/19
Package mechanical data
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 25.
TO-220FP drawing
7012510_Rev_K_B
12/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
T
a
ble 10.
I
2
P
A
KFP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
Figure 26.
I
2
P
A
KFP drawing
ꢉꢇꢍꢀꢆꢁꢊ REVꢂ!
Doc ID15685 Rev 3
13/19
Package mechanical data
T
a
ble 11.
TO-220 type A mechanical data
Dim.
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 27.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID15685 Rev 3
15/19
Package mechanical data
Table 12.
TO-247 mechanical data
Dim.
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
mm.
Typ.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
16/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 28.
TO-247 drawing
Package mechanical data
0075
3
25_G
Doc ID15685 Rev 3
17/19
Revision history
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
5
Revision history
T
a
ble 13.
Document revision history
Date
Revision
Changes
15-May-2009
02-Sep-2010
1
2
First release.
Document status promoted from preliminary data to datasheet.
Added new device in I²
P
A
KF
P
.
21-Jun-2012
3
drawing
have been added.
18/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
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