STMicroelectronics-STF15N65M5
| Part # | STMicroelectronics-STF15N65M5 |
Download  | STMicroelectronics-STF15N65M5 |
STF15N65M5, STFI15N65M5,
STP15N65M5
N-channel 650
V
,
0
.308
Ω
typ., 11 A MDmesh™ V Power MOSFET
in TO-220F
P
,
I
2
P
A
KFP and TO-220 packages
Datasheet — production data
Features
V
DS
T
Jmax
@
R
DS(on)
max
Order codes
I
D
3
2
1
STF15N65M5
STFI15N65M5
STP15N65M5
TO-220FP
710 V
< 0.34
Ω
11 A
TAB
■
Worldwide best R
DS(on)
* area
3
1
■
Higher V
DSS
rating and high dv/dt capability
■
Excellent switching performance
■
100% avalanche tested
2
2
3
1
I
2
P
A
KFP
TO-220
Figure 1.
Internal schematic diagram
Applications
$ꢅꢆꢇ
4
!
“ꢈ
■
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technolog
y
, which
is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
‘ꢅꢁꢈ
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficienc
y
.
3ꢅꢉꢈ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF15N65M5
STFI15N65M5
STP15N65M5
TO-220FP
I
2
P
A
KFP
TO-220
15N65M5
T
u
be
November 2012
Doc ID 022863 Rev 2
1/17
This is information on a product in full production.
17
Contents
STF15N65M5, STFI15N65M5, STP15N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220FP
I
2
P
A
KFP
TO-220
V
GS
I
D
Gate-source voltage
25
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
11
6.9
44
85
11
(1)
6.9
(1)
44
(1)
25
A
A
I
D
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
j
Storage temperature
– 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature.
2.
≤
11 A, di/dt
≤
400 A/µs; V
= 400 V, V
I
< V
(BR)DSS
SD
DD
DS(peak)
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220FP
I
2
P
A
KFP
TO-220
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
5
1.47
°C/W
°C/W
62.5
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetetive or not repetetive
(pulse width limited by T
jmax
I
AR
2.5
A
)
Single pulse avalanche energy (starting t
j
=
25°C, I
D
= I
AR
; V
DD
=50 V)
E
AS
160
mJ
Doc ID 022863 Rev 2
3/17
Electrical characteristics
STF15N65M5, STFI15N65M5, STP15N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
T
a
ble 5.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 650 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
650
V
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 650
V
,
T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
25 V
100 nA
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-
3
4
5
V
V
GS
= 10
V
,
I
D
= 5.5 A
0.308
0.34
Ω
resistance
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
816
23
pF
V
DS
= 100
V
, f = 1
M
Hz,
–
–
–
pF
pF
V
GS
= 0
Reverse transfer
capacitance
2.6
Equivalent
capacitance time
related
(1)
C
o(tr)
–
70
pF
V
DS
= 0 to 520
V
,
V
GS
= 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
21
5
–
–
pF
Intrinsic gate
resistance
R
G
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520
V
,
I
D
= 5.5 A,
V
GS
= 10 V
22
5.5
11
nC
nC
nC
–
–
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Electrical characteristics
Min. Typ. Max.
Unit
T
a
ble 7.
Symbol
Switching times
Parameter
Test conditions
t
d(V)
t
r (V)
t
f (i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
30
8
ns
ns
ns
ns
V
DD
= 400
V
,
I
D
= 7 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
11
t
c(off)
12.5
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
11
44
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 11 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
247
2.4
ns
µC
A
I
SD
= 11 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
19.5
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 11 A, di/dt = 100 A/µs
DD
= 100
V
,
T
j
= 150 °C
312
3
ns
µC
A
Q
rr
V
I
RRM
19
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022863 Rev 2
5/17
Electrical characteristics
STF15N65M5, STFI15N65M5, STP15N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
and I
2
PAKFP
Figure 3.
Thermal impedance for TO-220FP
and I
2
P
A
KFP
AM152
8
6v1
I
D
(A)
10
10
µs
1
100
µs
1m
s
Tj=150°C
Tc=25°C
10m
s
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area
for TO-220
Figure 5.
Thermal impedance for TO-220
AM152
8
5v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
Tj=150°C
Tc=25°C
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM152
8
7v1
AM152
88
7v1
I
D
(A)
I
D
(A)
V
= 9, 10 V
V
= 25 V
G
S
D
S
20
15
10
20
15
10
V
=
8
V
G
S
V
= 7 V
G
S
5
0
5
0
V
= 6 V
G
S
5
20
25 V
D
S
(V)
7
8
9 V
G
S
(V)
0
10
15
3
5
6
4
6/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Static drain-source on-resistance
AM152
8
9v1
D
S
AM1529
3
v1
V
(V)
G
S
R
D
S
(on)
(
Ω
)
V
V
DD
=520V
=5.5A
(V)
12
V
G
S
=10V
0.
3
5
0.
33
0.
3
1
0.29
500
I
D
V
D
S
10
8
400
3
00
200
6
4
100
0
0.27
0.25
2
0
10
20
25
Q
g
(nC)
I
D
(A)
0
5
15
0
4
6
10
2
8
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
AM15290v1
AM15291v1
C
E
o
ss
(pF)
(
µ
J)
4
3
.5
1000
Ci
ss
3
2.5
2
100
10
1
Co
ss
Cr
ss
1.5
1
0.5
0
0
0.1
100
200
400 500
600
1
10
V
D
S
(V)
100
3
00
V
D
S
(V)
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on-resistance vs
vs temperature
temperature
AM05459v2
AM05460v2
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
V
= 10 V
G
S
I =
5.5 A
I
V
D
= 250
µ
A
1.10
2.1
D
D
S
= V
G
S
1.9
1.7
1.5
1.
3
1.1
1.00
0.90
0.
8
0
0.9
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Doc ID 022863 Rev 2
7/17
Electrical characteristics
STF15N65M5, STFI15N65M5, STP15N65M5
Figure 14.
Source-drain diode forward
characteristics
Figure 15.
Normalized B
VDSS
vs temperature
AM05461v1
AM10
3
99v1
V
(V)
S
D
V
D
S
(norm)
T
J
=-50°C
1.0
8
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.
8
0.6
T
J
=25°C
T
J
=150°C
0.9
8
0.4
0.2
0.96
0.94
0.92
0
0
-50
-25
10
20
3
0
40
50 I
S
D
(A)
0
25 50 75
T
J
(°C)
100
Figure 16.
Switching losses vs gate resistance
(1)
AM15292v1
E
(
μ
J)
120
100
Eon
V
DD
=400V
V
G
S
=10V
I
D
=7A
8
0
60
40
20
0
Eoff
50
20
3
0
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
6
$$
ꢁK
ꢁꢆ6
ꢂꢃK
ꢁꢀꢀN&
ꢆꢆꢀꢀ
ꢉꢌꢉ
&
2
,
&
)
‘
ꢎ#/.34
6
$$
ꢁꢀꢀ
6
I
ꢎꢆꢀ6ꢎ6
‘-!8
$ꢌ5ꢌ
4
ꢌ
6
‘
6
$
2
‘
6
‘3
ꢆꢆꢀꢀ
&
$ꢌ5ꢌ
4
ꢌ
ꢆꢌꢃK
ꢂꢃK
0
7
ꢁK
0
7
!-ꢀꢁꢂꢊꢋVꢁ
!-ꢀꢁꢂꢊꢍVꢁ
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
,
!
!
!
“
$
3
&!34
$)/$%
,ꢎꢁꢀꢀ
(
6
$
‘
ꢆꢆꢀꢀ
&
$ꢌ5ꢌ
4
ꢌ
“
ꢉꢌꢉ
&
6
$$
ꢉꢌꢉ
&
ꢁꢀꢀꢀ
&
“
6
$$
ꢆꢄ
)
$
$
‘
2
‘
3
6
I
$ꢌ5ꢌ
4
ꢌ
0
W
!-ꢀꢁꢂꢃꢀVꢁ
!-ꢀꢁꢂꢃꢁVꢁ
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
– off
Ind
u
ctive Lo
a
d T
u
rn
6
ꢅ”2ꢈ$33
Id
6
$
90
%
Vd
s
90
%
Id
t
d
(v)
)
$-
Vg
s
90
%
Vg
s
10
%
Vd
s
on
)
$
Vg
s
(I(t))
6
$$
6
$$
10
%
Id
Vd
s
t
r
(v)
t
f
(i)
t
c
(off)
!-ꢀꢁꢂꢃꢆVꢁ
AM05540v1
Doc ID 022863 Rev 2
9/17
Package mechanical data
STF15N65M5, STFI15N65M5, STP15N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK
®
is an ST trademark.
10/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Package mechanical data
T
a
ble 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 022863 Rev 2
11/17
Package mechanical data
Figure 23.
TO-220FP drawing
STF15N65M5, STFI15N65M5, STP15N65M5
7012510_Rev_K_B
12/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Package mechanical data
T
a
ble 10.
I
2
P
A
KFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
Figure 24.
I
2
P
A
KFP (TO-281) drawing
ꢋꢆꢍꢁꢄꢀꢊ REVꢌ!
Doc ID 022863 Rev 2
13/17
Package mechanical data
STF15N65M5, STFI15N65M5, STP15N65M5
T
a
ble 11.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Figure 25.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 022863 Rev 2
15/17
Revision history
STF15N65M5, STFI15N65M5, STP15N65M5
5
Revision history
T
a
ble 12.
Document revision history
Date
Revision
Changes
05-Mar-2012
1
First release.
– The part number STB15N65M5 has been moved to a separate
datasheet.
09-Nov-2012
2
– Minor text changes.
16/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Philippines – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
Doc ID 022863 Rev 2
17/17
