STMicroelectronics-STF16N65M2

STF16N65M2  

N-channel 650

V

,

0

.32

Ω

typ., 11 A MDmesh M2  

Power MOSFET in a TO-220FP package  

Datasheet  

−

production data  

Features  

Order code  

V

DS

@ T

Jmax

R

DS(on)

max  

710 V

 

0.36

Ω

 

I

D  

STF16N65M2  

11 A  

•

Extremely low gate charge  

•

Excellent output capacitance (C

oss

) profile  

•

100% avalanche tested  

•

Zener-protected  

Applications  

72ꢀꢁꢁꢂ)3  

•

Switching applications  

Figure 1. Internal schematic diagram  

Description  

, TAB  

This device is an N-channel Power MOSFET  

developed using MDmesh™ M2 technology.  

Thanks to its strip layout and an improved vertical  

structure, the device exhibits low on-resistance  

and optimized switching characteristics, rendering  

it suitable for the most demanding high efficiency  

converters.  

AM15572v1  

Table 1. Device summary  

Order codes  

Marking  

16N65M2  

Package  

Packaging  

STF16N65M2  

TO-220FP  

Tube  

October 2014  

DocID027084 Rev 1  

1/13  

This is information on a product in full production.  

Contents  

STF16N65M2  

Contents  

2/13  

DocID027084 Rev 1  

STF16N65M2  

Electrical ratings  

1

Electrical ratings  

Table 2. Absolute maximum ratings  

Parameter  

Symbol  

Value  

Unit  

V

GS  

Gate-source voltage  

± 25  

11  

V

A

(1)  

I

D  

Drain current (continuous) at T

C

= 25 °C  

Drain current (continuous) at T

C

= 100 °C  

Drain current (pulsed)  

I

D  

6.9  

44  

A

(2)  

I

DM  

A

P

TOT  

T

o

tal dissipation at T

C

= 25 °C  

Peak diode recovery voltage slope  

MOSFET dv/dt ruggedness  

25  

W

dv/dt

(3)  

dv/dt

(4)  

15  

V/ns  

V/ns  

50  

Insulation withstand voltage (RMS) from  

all three leads to external heat sink  

V

ISO  

2500  

V

(t=1 s;TC=25 °C)  

T

stg  

T

j  

Storage temperature  

– 55 to 150  

°C  

Max. operating junction temperature  

1. Limited

 

only by maximum temperature allowed.  

2. Pulse

 

width limited by safe operating area.  

3.  

4.  

I

≤

11 A, di/dt

 

≤

400 A/µs; V  

≤

520 V  

< V  

, V

 

=400

V

.  

(BR)DSS DD  

SD  

DS peak  

V

DS  

Table 3. Thermal data  

Parameter  

Symbol  

Value  

Unit  

R

thj-case

Thermal resistance junction-case max  

5

°C/W  

°C/W  

R

thj-amb  

Thermal resistance junction-ambient max  

62.50  

Table 4. Avalanche characteristics  

Symbol  

Parameter  

Value  

Unit  

Avalanche current, repetitive or not  

repetitive (pulse width limited by T

jmax  

I

AR  

1.9  

A

)

Single pulse avalanche energy (starting  

T

j

=25°C, I

D

= I

AR

; V

DD

=50)  

E

AS  

360  

mJ  

DocID027084 Rev 1  

3/13  

13  

Electrical characteristics  

STF16N65M2  

2

Electrical characteristics  

(T

C

= 25 °C unless otherwise specified)  

Table 5. On /off states  

Test conditions  

Symbol  

Parameter  

Drain-source  

Min.  

Typ.  

Max. Unit  

V

(BR)DSS  

V

GS

= 0, I

D

= 1 mA  

650  

V

breakdown voltage  

V

1

µA  

µA  

Zero gate voltage  

drain current  

I

DSS  

V

100  

T

C

=125 °C  

Gate-body leakage  

current  

I

GSS  

V

DS

= 0, V

GS

= ± 25 V  

±10  

4

µA  

V

V

GS(th)  

R

DS(on)  

Gate threshold voltage

 

V

DS

= V

GS

, I

D

= 250 µA  

Static drain-source  

2

3

V

0.32  

0.36  

Ω

on-resistance  

Table 6. Dynamic  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max. Unit  

C

iss  

Input capacitance  

Output capacitance  

–

–

718  

32  

–

–

pF  

pF  

C

oss  

V

GS

= 0, V

DS

= 100 V,  

f = 1 MHz  

Reverse transfer  

capacitance  

C

rss  

–

–

–

1.1  

189  

5.2  

–

–

–

pF  

pF  

Ω

Equivalent output  

capacitance  

(1)  

C

oss eq.  

V

GS

= 0, V

DS

= 0 to 520 V  

f = 1 MHz open drain  

Intrinsic gate  

resistance  

R

G  

Q

g  

Q

gs  

Q

gd  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

–

–

–

19.5  

4

–

nC  

nC  

nC  

V

DD

= 520 V, I

D

= 11 A,  

–

V

GS

= 10 V (see

)  

8.3  

–

1.  

C

is defined as a constant equivalent capacitance giving the same charging time as C  

when V  

DS  

oss eq.  

oss  

increases from 0 to 80% V  

DSS  

4/13  

DocID027084 Rev 1  

STF16N65M2  

Electrical characteristics  

Table 7. Switching times  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max. Unit  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Rise time  

–

–

–

–

11.3  

8.2  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

= 325 V, I

D

= 5.5 A,  

R

G

= 4.7

Ω

,

V

GS

= 10 V  

(see

and

)  

Turn-off delay time  

Fall time  

36  

11.3  

Table 8. Source drain diode  

Test conditions  

Symbol  

Parameter  

Min. Typ. Max.

 

Unit  

I

SD  

Source-drain current  

–

–

–

–

–

–

–

–

–

11  

44  

A

A

(1)  

I

SDM  

Source-drain current (pulsed)  

Forward on voltage  

(2)  

V

SD  

V

GS

= 0, I

SD

= 11 A  

1.6  

V

t

rr  

Q

rr  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

342  

3.5  

ns  

µC  

A

I

V

DD

= 60 V (see

)  

I

RRM  

t

rr  

20.4  

458  

4.6  

ns  

µC  

A

I

SD

= 11 A, di/dt = 100 A/µs  

Q

rr  

V

DD

= 60

V

,

T

j

=150 °C  

(see

)  

I

RRM  

20.5  

1. Pulse

 

width limited by safe operating area  

2. Pulsed:

 

pulse duration = 300 µs, duty cycle 1.5%  

DocID027084 Rev 1  

5/13  

13  

Electrical characteristics  

STF16N65M2  

2.1  

Electrical characteristics (curves)  

Figure 2. Safe operating area  

Figure 3. Thermal impedance  

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7

F

 ꢇꢆƒ&

 

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‘6

ꢃ9ꢄ

 

ꢀꢁꢂ

 

ꢂ

ꢂꢀꢀ

 

Figure 4. Output characteristics  

Figure 5. Transfer characteristics  

*,3’ꢇꢇꢂꢀꢇꢀꢂꢉꢂꢉꢂꢇ)65

 

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ꢃ$ꢄ

 

ꢃ$ꢄ

 

9

*6

 ꢅꢌꢍꢅꢊꢍꢅꢋꢍꢅꢂꢀꢅ9

 

ꢇꢉ

 

ꢇꢀ

 

ꢂꢎ

 

ꢂꢇ

 

ꢊ

ꢇꢉ

 

ꢎ9

 

ꢆ9

 

ꢇꢀ

 

ꢂꢎ

 

ꢂꢇ

 

9

‘6ꢅ

 ꢅꢂꢊꢅ9

 

ꢊ

ꢉ

ꢀ

ꢉ

ꢀ

ꢉ9

 

ꢀ

ꢆ

ꢂꢀ

 

ꢂꢆ

 

9

‘6

ꢃ9ꢄ

 

ꢀ

ꢇ

ꢉ

ꢎ

ꢊ

9

*6

ꢃ9ꢄ

 

Figure 6. Normalized gate threshold voltage vs.

 

Figure 7. Normalized V

(BR)DSS

vs. temperature  

temperature  

GIPD180920141442FSR  

GIPD180920141448FSR  

V

GS(th)  

(norm)  

V

(BR)DSS  

(norm)  

I

D

= 250 µA  

1.1  

1.08  

1.04  

1.00  

I

D

= 1mA  

1.0  

0.9  

0.8  

0.96  

0.92  

0.88  

0.7  

0.6  

-75  

-25  

25  

75  

125  

-75  

-25  

25  

75  

125  

T

j  

(°C)  

T

j

(°C)  

6/13  

DocID027084 Rev 1  

STF16N65M2  

Electrical characteristics  

Figure 8. Static drain-source on-resistance  

Figure 9. Normalized on-resistance vs.  

temperature  

*,3’ꢇꢇꢂꢀꢇꢀꢂꢉꢂꢌꢀꢇ)65

 

5

‘6ꢃRQꢄ

 

GIPD180920141459FSR  

R

DS(on)  

(norm)  

ꢃȍꢄ

 

9

*6

 ꢅꢂꢀ9

 

2.2  

ꢀꢁꢈꢉ

 

ꢀꢁꢈꢈ

 

ꢀꢁꢈꢇ

 

V

GS

= 10V  

1.8  

1.4  

1

0.6  

0.2  

ꢀꢁꢈꢂ

 

ꢀꢁꢈꢀ

 

ꢀ

ꢇ

ꢉ

ꢎ

ꢊ

ꢂꢀ

 

,

‘

ꢃ$ꢄ

 

-75  

-25  

25  

75  

125  

T

j

(°C)  

Figure 10. Gate charge vs. gate-source voltage  

Figure 11. Capacitance variations  

*,3’ꢇꢇꢂꢀꢇꢀꢂꢉꢂꢌꢂꢎ)65

 

9

*6

 

&

ꢃ9ꢄ

 

ꢃ9ꢄ

 

ꢃS)ꢄ

 

9

‘6

 

9

”

ꢅ ꢅꢆꢇꢀꢅ9

 

&LVV

 

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ꢉꢀꢀ

 

ꢈꢀꢀ

 

ꢇꢀꢀ

 

ꢂꢀꢀ

 

ꢂꢀ

 

ꢊ

,

‘

ꢅ ꢅꢂꢂꢅ$

 

ꢂꢀꢀꢀ

 

ꢂꢀꢀ

 

ꢂꢀ

 

&RVV

 

&UVV

 

ꢎ

ꢉ

ꢇ

ꢀ

ꢂ

ꢀ

ꢀꢁꢂ

 

ꢀ

ꢉ

ꢊ

ꢂꢇ

 

ꢂꢎ

 

ꢇꢀ

 

4

J

ꢃQ&ꢄ

 

ꢀꢁꢂ

 

ꢂ

ꢂꢀ

 

ꢂꢀꢀ

 

9

‘6

ꢃ9ꢄ

 

Figure 12. Output capacitance stored energy  

Figure 13. Source-drain diode forward  

characteristics  

*,3’ꢇꢇꢂꢀꢇꢀꢂꢉꢂꢌꢇꢂ)65

 

*,3’ꢇꢇꢂꢀꢇꢀꢂꢉꢂꢌꢈꢈ)65

 

(

ꢃ—-ꢄ

 

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6′

 

ꢃ9ꢄ

 

ꢂꢁꢂ

 

7

M

 ꢅꢏꢆꢀƒ&

 

ꢆ

ꢂ

ꢉ

ꢈ

ꢇ

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M

 ꢅꢇꢆƒ&

 

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 ꢅꢂꢆꢀƒ&

 

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ꢀ

ꢀꢁꢎ

 

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ꢀ

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ꢈꢀꢀ

 

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ꢎꢀꢀ

 

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‘6

ꢃ9ꢄ

 

ꢀ

ꢇ

ꢉ

ꢎ

ꢊ

ꢂꢀ

 

,

6′

ꢃ$ꢄ

 

DocID027084 Rev 1  

7/13  

13  

Test circuits  

STF16N65M2  

3

Test circuits  

Figure 14. Switching times test circuit for  

resistive load  

Figure 15. Gate charge test circuit  

V

DD  

12V  

47k

Ω

 

1k

Ω  

100nF  

2200  

μ

F  

3.3  

μ

F  

R

L  

I

G

=CONST  

V

DD  

100

Ω  

V

i

=20V=V

GMAX  

D.U.T.  

V

D  

R

G  

V

GS  

2200  

μ

F  

D.U.T.  

V

G  

2.7k

Ω  

47k

Ω  

P

W  

1k

Ω  

P

W  

AM01468v1  

AM01469v1  

Figure 16. Test circuit for inductive load  

switching and diode recovery times  

Figure 17. Unclamped inductive load test circuit  

L

A

A

A

B

D

S

FAST  

DIODE  

L=100

μ

H  

V

D  

G

2200  

μ

F  

D.U.T.  

B

3.3  

μ

F  

V

DD  

3.3  

μ

F  

1000  

μ

F  

B

V

DD  

25  

Ω

I

D  

D

G

R

G  

S

V

i  

D.U.T.  

P

w  

AM01470v1  

AM01471v1  

Figure 18. Unclamped inductive waveform  

Figure 19. Switching time waveform  

t

on  

t

off  

td

off  

9

ꢃ%5ꢄ’66

 

t

r  

t

f  

td

on  

9

‘

 

90%  

10%  

90%  

,

‘0

 

10%  

V

GS  

V

DS  

,

‘

 

0

0

9

”

 

9

”

 

90%  

10%  

$0ꢀꢂꢉꢌꢇYꢂ

 

AM01473v1  

8/13  

DocID027084 Rev 1  

STF16N65M2  

Package mechanical data  

4

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in different grades of  

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  

ECOPACK

®

is an ST trademark.  

DocID027084 Rev 1  

9/13  

13  

Package mechanical data  

STF16N65M2  

Figure 20. TO-220FP drawing  

7012510_Rev_K_B  

10/13  

DocID027084 Rev 1  

STF16N65M2  

Package mechanical data  

Table 9. TO-220FP mechanical data  

mm  

Dim.  

Min.  

Typ.  

Max.  

A

B

4.4  

2.5  

4.6  

2.7  

D

2.5  

2.75  

0.7  

E

0.45  

0.75  

1.15  

1.15  

4.95  

2.4  

F

1

F1  

F2  

G

1.70  

1.70  

5.2  

G1  

H

2.7  

10  

10.4  

L2  

L3  

L4  

L5  

L6  

L7  

Ø

16  

28.6  

9.8  

2.9  

15.9  

9

30.6  

10.6  

3.6  

16.4  

9.3  

3

3.2  

DocID027084 Rev 1  

11/13  

13  

Revision history  

STF16N65M2  

5

Revision history  

Table 10. Document revision history  

Changes  

Date  

Revision  

24-Oct-2014  

1

First release.  

12/13  

DocID027084 Rev 1  

STF16N65M2  

IMPORTANT NOTICE – PLEASE READ CAREFUL

L

Y  

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T

.

A

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  

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DocID027084 Rev 1  

13/13  

13