STMicroelectronics-STF16NF25

Part #STMicroelectronics-STF16NF25
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STMicroelectronics-STF16NF25
STD16NF25  
Datasheet  
N-channel 250
V
,
1
95 mΩ typ., 14 A STripFET II Power MOSFET  
in a DPAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
3
2
STD16NF25  
250 V  
235 mΩ  
14 A  
1
•
•
•
Exceptional dv/dt capability  
100% avalanche tested  
Low gate charge  
DPAK  
D(2, TAB)  
Applications  
•
Switching applications  
G(1)  
Description  
This Power MOSFET has been developed using STMicroelectronics’ unique  
STripFET process, which is specifically designed to minimize input capacitance and  
gate charge. This renders the device suitable for use as primary switch in advanced  
high-efficiency isolated DC-DC converters for telecom and computer applications,  
and applications with low gate charge driving requirements.  
S(3)  
AM01475v1_noZen  
Product status link  
Product summary  
Order code  
STD16NF25  
Marking  
Package  
Packing  
16NF25  
DPAK  
T
a
pe and reel  
DS5532
–
Rev 6
–
July 2023  
For further information contact your local STMicroelectronics sales office.  

STD16NF25  
Electrical ratings  
1
Electrical ratings  
Table 1.
Absolute maximum ratings  
Parameter  
Symbol  
Value  
Unit  
V
V
Drain-source voltage  
Gate-source voltage  
250  
±20  
14  
DS  
GS  
V
V
Drain current (continuous) at T
 
= 25 °C  
C
I
D
A
Drain current (continuous) at T
 
= 100 °C  
8.8  
56  
C
I
Drain current (pulsed)  
A
W
DM  
P
T
o
tal power dissipation at T
 
= 25 °C  
85  
TOT  
C
dv/dt

Peak diode recovery voltage slope  
Storage temperature range  
15  
V/ns  
°C  
T
stg  
-55 to 150  
T
Operating junction temperature range  
°C  
J
1. Pulse
 
width is limited by safe operating area.  
2. ≤
 
14 A, di/dt ≤ 300 A/μs, V
 
= 80%V
 
.  
(BR)DSS  
I
SD  
DD  
Table 2.
Thermal data  
Parameter  
Symbol  
Value  
1.47  
50  
Unit  
°C/W  
°C/W  
R
thJC  
Thermal resistance, junction-to-case  
R
Thermal resistance, junction-to-ambient  
thJA  
2
1.  
When mounted on 1 inch
 
FR-4, 2 Oz copper board.  
Table 3.
Avalanche characteristics  
Symbol  
Parameter  
Value  
13  
Unit  
A
I
Avalanche current, repetitive or non-repetitive (pulse width limited by T
 
max.)  
AR  
J
E
Single pulse avalanche energy (starting T
 
= 25 °C, I
 
= I
 
, V
 
= 50 V)  
100  
mJ  
AS  
J
D
AR  
DD  
DS5532
–
Rev 6  
page 2/15  
 
 
 
 

STD16NF25  
Electrical characteristics  
2
Electrical characteristics  
T

C

= 25 °C unless otherwise specified.  
Table 4.
On/off states  
Symbol  
Parameter  
Test conditions  
Min.  
250  
Typ. Max. Unit  
V
V
V
V
V
V
V
= 0
V
, I
 
= 1
m
A  
Drain-source breakdown voltage  
V
(BR)DSS  
GS  
GS  
GS  
DS  
DS  
GS  
D
= 0
V
, V
 
=
2
50 V  
1
DS  
I
Zero gate voltage drain current  
µA  
DSS  
= 0
V
, V
 
=
2
50
V
, T
 
=
1
25 °C

10  
DS  
C
I
= 0
V
, V
 
=
±
20 V  
Gate-body leakage current  
Gate threshold voltage  
±100  
4
nA  
V
GSS  
GS  
V
= V
 
, I
 
= 250 µA  
2
3
GS(th)  
DS(on)  
GS  
D
R
= 10
V
, I
 
=
6
.5 A  
D
Static drain-source on resistance  
195  
235  
mΩ  
1. Specified
 
by design, not tested in production.  
Table 5.
Dynamic  
Symbol  
Parameter  
Input capacitance  
Test conditions  
Min.  
Typ. Max. Unit  
C
iss  
–
–
–
–
–
–
–
–
680  
125  
20  
48  
2.1  
18  
3
–
–
–
–
–
–
–
–
pF  
pF  
pF  
pF  
Ω
C
oss  
V
V
= 25
V
, f = 1
M
Hz, V
 
= 0 V  
Output capacitance  
DS  
GS  
GS  
C
rss  
Reverse transfer capacitance  
Equivalent output capacitance  
Gate input resistance  
T
o
tal gate charge  
= 0
V
, V
 
= 0
t
o 200 V  
C
oss eq.  
DS  
R
f = 1 MHz, I
 
= 0 A  
D
G
Q
nC  
nC  
nC  
g
V
= 200
V
, I
 
=
1
3 A, V
 
= 0 to 10 V  
D GS  
DD  
Q
Gate-source charge  
gs  
Q
gd  
Gate-drain charge  
9
1.  
C
oss eq.  
is defined as a constant equivalent capacitance giving the same charging time as C  
when V
 
increases from 0  
oss DS  
to 80% V  
.
DSS  
Table 6.
Switching times  
Test conditions  
Symbol  
Parameter  
Min.  
Typ. Max. Unit  
t
Turn-on delay time  
Rise time  
–
–
–
–
9
–
–
–
–
ns  
ns  
ns  
ns  
V
= 125
V
, I
 
=
6
.5 A,  
d(on)  
DD  
D
R
= 4.7 Ω, V
 
= 10 V  
t
17  
35  
17  
G
GS  
r
t
Turn-off delay time  
Fall time  
d(off)  
t
f
DS5532
–
Rev 6  
page 3/15  
 
 
 

STD16NF25  
Electrical characteristics  
Table 7.
Source-drain diode  
Test conditions  
Symbol  
Parameter  
Source-drain current  
Min.  
Typ. Max. Unit  
I
–
–
–
–
–
14  
56  
A
A
SD  
I
Source-drain current (pulsed)  
Forward on voltage  
SDM  
V
I
I
= 13 A, V
 
= 0 V  
1.6  
V
SD  
SD  
GS  
SD  
t
= 13 A, di/dt = 100 A/µs,  
= 60 V  
Reverse recovery time  
Reverse recovery charge  
133  
651  
ns  
nC  
rr  
V
Q
DD  
rr  
I
Reverse recovery current  
–
10  
A
RRM  
t
I
= 13 A, di/dt = 100 A/µs,  
= 60
V
, T
 
=
1
50 °C  
Reverse recovery time  
–
–
157  
895  
ns  
rr  
SD  
V
Q
DD  
J
Reverse recovery charge  
nC  
rr  
I
Reverse recovery current  
–
11  
A
RRM  
1. Pulse
 
width is limited by safe operating area.  
2. Pulsed:
 
pulse duration = 300 μs, duty cycle 1.5%.  
DS5532
–
Rev 6  
page 4/15  
 
 

STD16NF25  
Electrical characteristics (curves)  
2.1  
Electrical characteristics (curves)  
Figure 1.
Safe operating area  
Figure 2.
Thermal impedance  
AM11291v1  
GC20460  
I
D
K
(A)  
100  
10µs  
10

0  

10  
100µs  
10

-1  

10

-2  

1ms  
Tj=150°C  
1
Z

th

= K *R

thJC  

10ms  
Tc=25°C  
Single pulse  
0.1  
10

-5  

10

-4  

10

-3  

10

-2  

10

-1  

t

p

(s)  
10  
V
DS
(V)  
0.1  
1
100  
Figure 3.
Output characterisics  
Figure 4.
Transfer characteristics  
Figure 5.
Normalized V

(BR)DSS

vs temperature  
Figure 6.
Static drain-source on resistance  
DS5532
–
Rev 6  
page 5/15  
 

STD16NF25  
Electrical characteristics (curves)  
Figure 7.
Gate charge vs gate-source voltage  
Figure 8.
Capacitance variations  
Figure 9.
Normalized gate threshold voltage vs  
temperature  
Figure 10.
Normalized on resistance vs temperature  
Figure 11.
Source-drain diode forward characteristics  
Figure 12.
Maximum avalanche energy vs temperature  
DS5532
–
Rev 6  
page 6/15  

STD16NF25  
Test circuits  
3
Test circuits  
Figure 13.
Test circuit for resistive load switching times  
Figure 14.
Test circuit for gate charge behavior  
V

DD  

12 V  
47 kΩ  
1 kΩ  
100 nF  
R

L  

2200  
μF  
3.3  
μF  
V

DD  

+
I

G

= CONST  
2.7 kΩ  
V

D  

R

G  

D.U.
T
.  
100 Ω  
V

GS  

pulse width  
+
D.U.
T
.  
V

GS  

V

G  

2200  
μF  
pulse width  
47 kΩ  
1 kΩ  
AM01469v1  
AM01468v1  
Figure 16.
Unclamped inductive load test circuit  
Figure 15.
Test circuit for inductive load switching and  
diode recovery times  
A
A
A
L
D
S
100 µH  
D
fast  
diode  
V

D  

G
D.U.
T
.  
B
2200  
3.3  
1000  
µF  
B
3.3  
µF  
B
µF  
V

DD  

+
µF  
+
V

DD  

25 Ω  
I

D  

G
D.U.
T
.  
R

G  

S
+
_
D.U.
T
.  
V

i  

pulse width  
AM01470v1  
AM01471v1  
Figure 17.
Unclamped inductive waveform  
Figure 18.
Switching time waveform  
t

on  

t

d(on)  

t

off  

t

d(off)  

V

(BR)DSS  

t

r  

t

f  

V

D  

90%  
90%  
I

DM  

V

DS  

10%  
V

GS  

10%  
I

D  

0
0
V

DD  

V

DD  

90%  
10%  
AM01472v1  
AM01473v1  
DS5532
–
Rev 6  
page 7/15  
 
 
 
 

STD16NF25  
Package information  
4
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of

packages,  
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product  
status are available at:

. ECOPACK is an ST trademark.  
4.1  
DPAK (TO-252) type C3 package information  
Figure 19.
DPAK (TO-252) type C3 package outline  
0068772_type-C3_rev34  
DS5532
–
Rev 6  
page 8/15  
 
 

STD16NF25  
DPAK (TO-252) type C3 package information  
Table 8.
DPAK (TO-252) type C3 mechanical data  
mm  
Typ.  
2.30  
Dim.  
Min.  
2.20  
0.00  
0.90  
0.72  
0.72  
5.13  
0.47  
0.47  
6.00  
5.20  
6.50  
5.00  
2.186  
9.80  
1.40  
Max.  
2.38  
0.10  
1.10  
0.85  
1.10  
5.46  
0.60  
0.60  
6.20  
5.70  
6.70  
5.40  
2.386  
10.40  
1.70  
A
A1  
A2  
b
1.01  
5.33  
b2  
b3  
c
c2  
D
6.10  
5.45  
D1  
E
6.60  
E1  
e
5.20  
2.286  
10.10  
1.50  
H
L
L1  
L2  
L3  
L4  
L5  
L6  
θ
2.90 REF  
0.51 BSC  
0.90  
0.60  
0.15  
1.25  
1.00  
0.75  
0.80  
1.80 REF  
0°  
5°  
5°  
8°  
9°  
9°  
θ1  
θ2  
7°  
7°  
DS5532
–
Rev 6  
page 9/15  

STD16NF25  
DPAK (TO-252) type C3 package information  
Figure 20.
DPAK (TO-252) recommended footprint (dimensions are in mm)  
FP_0068772_34  
DS5532
–
Rev 6  
page 10/15  

STD16NF25  
DPAK (TO-252) packing information  
4.2  
DPAK (TO-252) packing information  
Figure 21.
DPAK (TO-252) tape outline  
10 pitches cumulative  
tolerance on tape +/- 0.2 mm  
P0  
Top cover  
tape  
P2  
D
T
E
F
W
K0  
B1  
B0  
For machine ref. only  
including draft and  
A0  
D1  
P1  
radii concentric around B0  
U
s
er direction o
f
f
e
ed  
R
Bending radius  
U
s
er direction o
f
f
e
ed  
AM08852v1  
DS5532
–
Rev 6  
page 11/15  
 

STD16NF25  
DPAK (TO-252) packing information  
Figure 22.
DPAK (TO-252) reel outline  
T
40mm min.  
access hole  
at slot location  
B
D
C
N
A
G measured  
at hub  
Tape slot  
in core for  
tape start  
Full radius  
2.5mm min.width  
AM06038v1  
Table 9.
DPAK (TO-252) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
6.8  
Max.  
7
Min.  
Max.  
A0  
B0  
B1  
D
A
B
C
D
G
N
T
330  
10.4  
10.6  
12.1  
1.6  
1.5  
12.8  
20.2  
16.4  
50  
13.2  
18.4  
22.4  
1.5  
1.5  
D1  
E
1.65  
7.4  
1.85  
7.6  
F
K0  
P0  
P1  
P2  
R
2.55  
3.9  
2.75  
4.1  
Base qty.  
Bulk qty.  
2500  
2500  
7.9  
8.1  
1.9  
2.1  
40  
T
0.25  
15.7  
0.35  
16.3  
W
DS5532
–
Rev 6  
page 12/15  

STD16NF25  
Revision history  
Table 10.
Document revision history  
Changes  
Date  
Revision  
12-Oct-2007  
1
2
Initial release.  
13-Nov-2007  
Modified:
Figure 13: Capacitance variations.  
Figure 2: Safe operating area for TO-220, Figure 4: Safe  
operating area for TO-220FP
and
Figure 6: Safe operating area  
for DPAK
have been updated.  
29-Mar-2012  
3
Section 4: Package mechanical data
and
Section 5: Packaging  
mechanical data
have been updated.  
Minor text changes  
– Modified: PTO
T
,
d
erating factor values,
note 1
on
T
a
ble 2
,  
Rthj-case, Rthj-amb only for TO-220 and DPAK  
– Updated:
Section 4: Package mechanical data  
– Minor text changes  
06-Mar-2013  
21-Jan-2019  
4
5
The part number STP16NF25 has been moved to a separate datasheet.  
Removed maturity status indication from cover page. The document status is production data.  
Updated
Section 4 Package information
.  
Minor text changes.  
The part number STF16NF25 has been moved to a separate datasheet and the document  
has been updated accordingly.  
Removed “
Section 4.1 DPAK (TO-252) type A package information
” and replaced “
Section 4.2  
DPAK (TO-252) type C2 package information
” with

19-Jul-2023  
6
Minor text changes.  
DS5532
–
Rev 6  
page 13/15  
 

STD16NF25  
Contents  
Contents  

Electrical ratings

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.

Electrical characteristics

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.

Package information

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.

DPAK (TO-252) type C3 package informatio

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DPAK (TO-252) packing information

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision history

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DS5532
–
Rev 6  
page 14/15  

STD16NF25  
IMPORTANT NOTICE – READ CAREFULLY  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST  
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST  
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of  
purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, refer to

. All other product or service names  
are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2023 STMicroelectronics – All rights reserved  
DS5532
–
Rev 6  
page 15/15