STMicroelectronics-STF18N60DM2
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STF18N60DM2
Datasheet
N-channel 600
V
,
0
.260 Ω typ., 12 A MDmesh DM2
Power MOSFET in a TO-220FP package
Features
V
R
max.
I
D
Order code
STF18N60DM2
DS
DS(on)
600 V
0.295 Ω
12 A
•
•
•
•
•
•
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
3
2
1
100% avalanche tested
TO-220FP
Extremely high dv/dt ruggedness
Zener-protected
D(2)
Applications
G(1)
•
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
recovery diode series. It offers very low recovery charge (Q
rr
) and time (t
rr
) combined
with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
S(3)
AM15572v1_no_tab
Product status links
Product summary
Order code
Marking
STF18N60DM2
18N60DM2
TO-220FP
Tube
Package
Packing
DS10966
–
Rev 5
–
June 2019
For further information contact your local STMicroelectronics sales office.
STF18N60DM2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
V
Gate-source voltage
±25
12
GS
I
Drain current (continuous) at T
Drain current (continuous) at T
= 25 °C
A
D
case
case
I
= 100 °C
7.6
48
A
D
I
Drain current (pulsed)
A
DM
P
TOT
T
o
tal power dissipation at T
= 25 °C
case
25
W
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
40
V/ns
kV
50
Insulation withstand voltage (RMS) from all three leads to external heat
sink
V
2.5
ISO
(t = 1 s; T
= 25 °C)
C
T
Storage temperature range
°C
°C
stg
–55 to 150
T
Operating junction temperature range
j
1. Pulse
width is limited by safe operating area.
2.
3.
I
≤ 12, di/dt ≤ 400 A/µs, V
< V
, V
= 400 V
DD
SD
DS(peak)
(BR)DSS
V
≤ 480 V
DS
Table 2.
Thermal data
Symbol
Parameter
Value
5
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
2.5
A
AR
(pulse width limited by T
)
jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
380
mJ
AR
j
D
AR
DD
DS10966
–
Rev 5
page 2/12
STF18N60DM2
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
Drain-source breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
600
(BR)DSS
GS
D
V
V
T
= 0
V
, V
=
6
00 V
1
µA
GS
DS
I
= 0
V
, V
=
6
00 V,
Zero gate voltage drain current
DSS
GS
DS
100
µA
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
5
µA
V
GSS
DS
DS
V
V
V
= V
, I
= 250 µA
3
4
GS(th)
GS
D
Static drain-source on-
resistance
R
DS(on)
= 10
V
, I
= 6 A
D
0.260 0.295
Ω
GS
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
800
40
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
1.33
80
rss
= 0 to 480
V
, f = 1
M
Hz, V
= 0 V
C
oss eq.
DS
GS
R
G
f = 1 MHz, I
=0 A
D
5.6
20
Q
g
nC
nC
nC
V
= 480
V
, I
=
1
2 A, V
= 0 to 10 V
D GS
DD
Q
gs
Gate-source charge
5.2
8.5
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
13.5
8
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
d(on)
V
V
= 300
V
, I
= 6 A R
=
4
.7 Ω,
D G
DD
t
Rise time
ns
r
GS
t
Turn-off delay time
Fall time
9.5
ns
d(off)
t
32.5
ns
f
DS10966
–
Rev 5
page 3/12
STF18N60DM2
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
12
Unit
A
I
–
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
48
A
SDM
V
V
= 0
V
, I
=
1
2 A
SD
1.6
V
GS
SD
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
125
0.675
11
ns
μC
A
rr
I
= 12 A, di/dt = 100 A/µs, V
= 60 V
DD
SD
Q
rr
I
RRM
t
190
1.225
13
ns
μC
A
rr
I
= 12 A, di/dt = 100 A/µs, V
= 60
V
,
DD
SD
j
Q
rr
I
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
DS10966
–
Rev 5
page 4/12
STF18N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GIPG260320151622ALS
GC20940
K
I
D
(A)
10
1
10
-1
10
-2
10
-3
10 μs
10
0
100 μs
1 ms
10 ms
10
-1
10
-2
T
j
≤
150
°C
T
c
= 25 °C
single pulse
10
-1
10
0
10
1
10
2
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
(V)
t
p
(s)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG290415FQ6GOCH
GIPG290415FQ6GTCH
I
D
I
D
(A)
(A)
V
GS
= 7,8,9,10 V
V
DS
= 12 V
24
24
20
16
12
8
20
16
12
8
V
GS
= 6 V
4
0
4
0
V
GS
= 5 V
12 V
DS
(V)
0
2
4
6
8
10
2
3
4
5
6
7
8
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GIPG250320151541ALS
GIPG250320151528ALS
V
GS
(V)
R
DS(on)
V
DS
(Ω)
(V)
V
DD
= 480 V
I
D
= 12 A
12
10
8
600
0.275
V
DS
500
400
300
200
100
V
GS
= 10 V
0.270
0.265
0.260
0.255
0.250
6
4
2
0
0
0
4
8
12
16
20
Q
g
(nC)
0
2
4
6
8
10
12
I
D
(A)
DS10966
–
Rev 5
page 5/12
STF18N60DM2
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
GIPG250320151620ALS
C
(pF)
GIPG250320151515ALS
V
GS(th)
(norm.)
1.1
10
3
I
D
= 250 μA
C
ISS
1.0
0.9
0.8
0.7
0.6
10
2
10
1
10
0
C
OSS
f = 1 MHz
C
RSS
10
-1
10
0
10
1
10
2
V
DS
(V)
-75
-25
25
75
125
T
j
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GIPG250320151534ALS
R
DS(on)
(norm.)
GIPG250320151522ALS
V
(BR)DSS
(norm.)
2.2
1.08
1.04
1.00
0.96
V
GS
= 10 V
I
D
= 1 mA
1.8
1.4
1.0
0.6
0.2
0.92
0.88
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Source-drain diode forward characteristics
Figure 12.
Output capacitance stored energy
GIPG250320151630ALS
GIPD280120161127EOS
V
SD
E
OSS
(V)
(µJ)
T
j
= -50 °C
1.1
1.0
0.9
0.8
0.7
0.6
0.5
6
5
4
3
2
T
j
= 25 °C
T
j
= 150 °C
1
0
0
2
4
6
8
10
12
I
SD
(A)
0
100 200 300 400 500 600
V
DS
(V)
DS10966
–
Rev 5
page 6/12
STF18N60DM2
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS10966
–
Rev 5
page 7/12
STF18N60DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-220FP package information
Figure 19.
TO-220FP package outline
7012510_Rev_13_B
DS10966
–
Rev 5
page 8/12
STF18N60DM2
TO-220FP package information
Table 8.
TO-220FP package mechanical data
mm
Dim.
Min.
4.40
2.50
2.50
0.45
0.75
1.15
1.15
4.95
2.40
10.00
Typ.
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16.00
28.60
9.80
2.90
15.90
9.00
3.00
30.60
10.60
3.60
16.40
9.30
3.20
DS10966
–
Rev 5
page 9/12
STF18N60DM2
Revision history
Table 9.
Document revision history
Date
Revision
Changes
01-Apr-2015
1
First release.
T
e
xt edits throughout document
In
Section 2.1 Electrical characteristics (curves)
:
– updated
Figure 4: Output characteristics
– updated
Figure 5: Transfer characteristics
21-May-2015
2
Updated title and I
values in
features
and
T
a
ble 1
02-Jul-2015
28-Jan-2016
3
4
D
Updated
Section 2.1: “Electrical characteristics (curves)”
.
10-Jun-2019
5
Minor text changes.
DS10966
–
Rev 5
page 10/12
STF18N60DM2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220FP package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
DS10966
–
Rev 5
page 11/12
STF18N60DM2
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DS10966
–
Rev 5
page 12/12
